Advance

OKA Nobuto

    Department of Biological and Environmental Chemistry　Professor/Manager
Last Updated :2024/04/19

Researcher Information

Degree

  • Ph. D.（University of Tokyo）

J-Global ID

Research Areas

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Thermal engineering
  • Informatics / Information theory
  • Nanotechnology/Materials / Thin-film surfaces and interfaces
  • Nanotechnology/Materials / Inorganic materials
  • Nanotechnology/Materials / Functional solid-state chemistry
  • Informatics / Human interfaces and interactions
  • Informatics / Database science

Academic & Professional Experience

  • 2022/04 - Today  Kindai UniversityFaculty of Humanity-Oriented Science and EngineeringProfessor
  • 2016/04 - 2022/03  Kindai UniversityFaculty of Humanity-Oriented Science and EngineeringAssociate Professor
  • 2013/04 - 2016/03  Tohoku UniversityInstitute of Multidisciplinary Research for Advanced MaterialsAssociate Professor (Specially Appointed for Research)
  • 2012/04 - 2013/03  The Graduate School of Project DesignAssociate Professor
  • 2008/04 - 2012/03  Aoyama Gakuin University助教, 博士研究員
  • 2006/10 - 2008/03  University of Tokyo特任助教, 産学官連携研究員

Education

  •        -   University of Tokyo

Association Memberships

  • The Electrochemical Society   THE SOCIETY OF CHEMICAL ENGINEERS, JAPAN   THE CHEMICAL SOCIETY OF JAPAN   American Vacuum Society   Materials Research Society   JAPAN SOCIETY OF THERMOPHYSICAL PROPERTIES   THE JAPAN SOCIETY OF APPLIED PHYSICS   JAPAN SOCIETY OF INFORMATION AND KNOWLEDGE   

Published Papers

  • Thin Film Synthesis -Sputter Deposition of Functional Ceramic Thin Films: A Case of SnO2-based Transparent Conductive Oxide Films-
    Nobuto Oka; Yuzo Shigesato
    Ceramics Japan 58 (12) 808 - 812 2023/12 [Refereed][Invited]
  • High-speed purification of heavy metal-containing waste liquid using polymer gel and its development to the environmental education
    Ayaka Fukuchi; Moeka Kubo; Hyuga Nakahara; Yuma Morimoto; Risa Nakamura; I Gede Agus Krisna Warmayana; Tetsuaki Nishida; Nobuto Oka
    Reports of Faculty of Humanity-Oriented Science and Engineering, Kindai University 34 21 - 24 2023/08
  • Shunsuke Matsusako; Sayaka Masuda; Saeko Matsuo; Ryota Imamura; Takahisa Sakuragi; Honami Inada; Hikaru Hayakawa; Tetsuaki Nishida; Nobuto Oka
    Hyperfine Interactions Springer Science and Business Media LLC 244 (2) 2023 [Refereed]
  • Saeko Matsuo; Naoki Shimojo; Ayaka Fukuchi; Hyuga Nakahara; Yuma Morimoto; Yosuke Morioka; Eisuke Hori; Tetsuaki Nishida; Nobuto Oka
    Reports of Faculty of Humanity-Oriented Science and Engineering, Kindai University 33 39 - 42 2022/06
  • Sputtering processes to deposit various transparent conductive oxide films
    Yuzo SHIGESATO; Nobuto OKA
    Oyo Buturi 91 (3) 160 - 163 2022/03 [Refereed][Invited]
  • Tetsuaki Nishida; Shiro Kubuki; Nobuto Oka
    Journal of Materials Science: Materials in Electronics Springer Science and Business Media LLC 0957-4522 2021/09 [Refereed]
  • T. Nishida; N. OKA; T. Sakuragi; S. Matsusako; R. Imamura; Y. Sato
    Journal of Materials Science: Materials in Electronics Springer Science and Business Media LLC 31 22881 - 22892 0957-4522 2020/11 [Refereed]
  • Wilem MUSU; Akihiro TSUCHIDA; Hirofumi KAWAZUMI; Nobuto OKA
    Joho Chishiki Gakkaishi Japan Society of Information and Knowledge 30 (3) 361 - 369 0917-1436 2020/09 [Refereed]
  • Substitutional Effect of SnO in Conductive Vanadate Glass
    Nobuto Oka; Tomoka Izumi; Yuki Fujita; Ryoya Sugimoto; I Gede Agus; Krisna Warmayana; Takahisa Sakuragi; Ryota Imamura; Shunsuke Matsusako; Tetsuaki Nishida
    近畿大学産業理工学部研究報告かやのもり 31 7 - 9 2020/06
  • B. Xie; R. Sakamoto; A. Kitajou; K. Nakamoto; L. Zhao; S. Okada; Y. Fujita; N. Oka; T. Nishida; W. Kobayashi; M. Okada; T. Takahara
    Scientific Reports NATURE PUBLISHING GROUP 10 (1) 3278  2045-2322 2020/02 [Refereed]
     
    The carbonophosphate Na3FePO4CO3 was synthesized by the mechanical ball milling method for the first time. The composition of the obtained sample with a higher amount of Fe2+ was Na2.66Fe0.662+Fe0.343+PO4CO3 as confirmed by Mossbauer analysis, owing to the good airtight properties of this method. The obtained samples in an organic electrolyte delivered an initial discharge capacity of 124 mAh/g at room temperature, and a larger discharge capacity of 159 mAh/g (1.66 Na+/mole) at 60 degrees C. With 17 m NaClO4 aqueous electrolyte, a discharge capacity of 161 mAh/g (1.69 Na+/mole) was delivered because of the high ionic conductivity of the concentrated aqueous electrolyte. During the charge-discharge process, the formation of Fe4+ after charging up to 4.5 V and the return of Fe2+ after discharging down to 1.5V were detected by ex-situ X-ray absorption near edge structure (XANES) analysis.
  • Application of PCA-SVM and ANN Techniques for Plastic Identification by Raman Spectroscopy
    W. Musu; A. Tsuchida; H. Kawazumi; N. Oka
    Proc. of 1st International Conference on Cybernetics and Intelligent System (IEEE Conference Publication) 114 - 118 2019/10 [Refereed]
  • Adsorption and Removal Technology for Cs+ in Aqueous Solution Using Poly-2-acrylamido-2-methyl-1-propanesolfonic acid (PAMPS) Hydrogel
    Sayaka Masuda; Ryoya Sugimoto; Tetsuaki Nishida; Nobuto Oka
    RADIOISOTOPES 68 331 - 337 2019 [Refereed]
  • T. Nishida; Y. Fujita; S. Shiba; S. Masuda; N. Yamaguchi; T. Izumi; S. Kubuki; N. Oka
    J. Mater. Sci.: Mater. Electron. 30 (9) 8847 - 8854 0957-4522 2019 [Refereed]
     
    © 2019, Springer Science+Business Media, LLC, part of Springer Nature. 57 Fe Mössbauer spectra of 20BaO·3SnO 2 ·7Fe 2 O 3 ·70V 2 O 5 glass measured at room temperature shows a marked decrease in quadrupole splitting (Δ) of iron (III) from 0.71 to 0.57 and 0.58 (± 0.02) mm s −1 after isothermal annealing at 500 °C for 30 and 60 min, respectively. The Δ value also shows a decrease from 0.71 to 0.65 and 0.60 (± 0.02) mm s −1 after the annealing at 450 °C for 30 and 60 min, respectively. These results reflect decreased distortion of FeO 4 and VO 4 tetrahedra or structural relaxation of the 3D-network (skeleton). 119 Sn Mössbauer spectra of 20BaO·3SnO 2 ·7Fe 2 O 3 ·70V 2 O 5 glass are comprised of a broad singlet due to distorted Sn IV O 6 octahedra, which have an identical Δ of 0.51 (± 0.02) mm s −1 irrespective of the annealing at 450 and 500 °C. These Mössbauer studies reveal that Fe III atoms occupy network former (NWF) sites by sharing corner oxygen atoms with V IV and V V atoms to constitute the 3D-network, while Sn IV atoms are ionically bonded to the oxygen atoms at “interstitial” sites to play a role of network modifier (NWM). A marked decrease in the DC-resistivity (ρ) from 1.7 MΩ cm to 5.6 and 5.0 Ω cm was observed at room temperature after isothermal annealing at 500 °C for 15 and 30 min, respectively. This is attributed to an increase in the carrier mobility associated with the wide isotropic 5s orbitals of Sn IV atoms occupying NWM sites in addition to the increased carrier density caused by the structural relaxation of the 3D-network.
  • Y. Fujita; H. Miyamoto; S. Kubuki; S. Masuda; T. Nishida; N. Oka
    Physica Status Solidi A 216 (5) 1800157  1862-6300 2019 [Refereed]
     
    © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Vanadate glasses have numerous industrial applications and enhancement of their electrical conductivity is of interest for conducting glass for electronic and optical devices. The effect of substitutional doping of Sn IV (4d 10 ) for Fe III on the local structure and electrical conductivity (σ) of barium iron vanadate glass is investigated in this study. The σ value of as-cast 20BaO · 3SnO 2 · 7Fe 2 O 3 · 70V 2 O 5 glass (5.9 × 10 −7 S cm −1 ) is comparable to that of as-cast 20BaO · 10Fe 2 O 3 · 70V 2 O 5 glass. The σ value of the doped glass increases to 1.9 × 10 −1 S cm −1 after isothermal annealing at 500 °C for 15 min, which is an order of magnitude larger than that of the undoped glass annealed under the same conditions. From room-temperature Mössbauer spectra of conductive vanadate glasses annealed at 500 °C for 15 min, it is demonstrated that the quadrupole splitting of the Fe III (0.60 mm s −1 ) in 3 mol%-SnO 2 containing vanadate glass is slightly smaller than that of SnO 2 -free vanadate glass (0.65 mm s −1 ). This indicates smaller distortion of FeO 4 and VO 4 tetrahedra in the SnO 2 -containing glass compared to the undoped glass, which is responsible for a marked increase in the carrier mobility.
  • N. Nagamura; R. Taniki; Y. Kitada; A. Masuda; H. Kobayashi; N. Oka; I. HONMA
    ACS Applied Energy Materials 1 (7) 3084 - 3092 2018/07 [Refereed]
     
    © 2018 American Chemical Society. The molecular design of organic energy-storage devices relies on correlations between the electrochemical properties of organic materials and their molecular structures. Here we report a systematic study of the fundamental electronic states of the quinone family of redox-active materials. Poly(ethylene oxide) coatings, as elution inhibitors, facilitated the evaluation of the electrochemical properties of single quinone molecules. Moreover, we confirmed experimentally how LUMO energies and their corresponding redox potentials depend on molecular structure, including the number of aromatic rings, the positions of functional groups, and coordination structures; this was achieved by elemental and chemical-state-selective X-ray absorption spectroscopy, and DFT calculations. We introduce an energy diagram depicting a segmentalized reduction process; this diagram considers the intermediate states during redox reactions to discuss processes that dominate changes in electrochemical properties as molecular structures are altered. Our results and analysis strategy are widely applicable to the material design of future organic molecular-based devices.
  • T. Tamaki; H. Wanga; N. Oka; I. Honma; S.-H. Yoond; T. Yamaguchi
    International Journal of Hydrogen Energy Elsevier Ltd 43 (12) 6406 - 6412 0360-3199 2018/03 [Refereed]
     
    The tolerance to corrosion of cathode catalyst supports comprising carbon nanofibers with differing alignments of graphene layers was evaluated, and its correlation with structural parameters obtained from Raman spectra was discussed. The carbon nanofibers employed in this study were platelet-type carbon nanofibers (PCNF) and tubular carbon nanofibers (TCNF). The tolerance to carbon corrosion was evaluated in a membrane electrode assembly using a start-stop durability testing protocol. While the ratio of the D band peak intensity to that of the G band (ID/IG) does not show any correlation with tolerance to carbon corrosion, full width at half maximum of the G band (FWHM(G)) correlates well with tolerance to carbon corrosion. The results suggest that carbon materials with low FWHM(G) values are promising as cathode catalyst supports in PEFCs.
  • T. Nishida; I. Furumoto; Y. Fujita; S. Kubuki; N. Oka
    Journal of Materials Science: Materials in Electronics Springer New York LLC 29 (4) 2654 - 2659 1573-482X 2018/02 [Refereed]
     
    57Fe Mössbauer spectrum of conductive barium iron vanadate glass with a composition of 20BaO·10Fe2O3·70V2O5 (in mol%) showed paramagnetic doublet peak due to distorted FeIIIO4 tetrahedra with isomer shift (δ) value of 0.37 (± 0.01) mm s−1. Mössbauer spectra of 20BaO·10Fe2O3·xMoO3·(70 − x)V2O5 glasses (x = 20–50) showed paramagnetic doublet peaks due to distorted FeIIIO6 octahedra with δ’s of 0.40–0.41 (± 0.01) mm s−1. These results evidently show a composition-dependent change of the 3D-skeleton structure from “vanadate glass” phase, composed of distorted VO4 tetrahedra and VO5 pyramids, to “molybdate glass” composed of distorted MoO6 octahedra. After isothermal annealing at 500 °C for 60 min, Mössbauer spectra also showed a marked decrease in the quadrupole splitting (Δ) of FeIII from 0.70 to 0.77 to 0.58–0.62 (± 0.02) mm s−1, which proved “structural relaxation” of distorted VO4 tetrahedra which were randomly connected to FeO4, VO5, MoO6, FeO6 and MoO4 units by sharing corner oxygen atoms or edges. DC-conductivity (σ) of barium iron vanadate glass (x = 0) measured at room temperature was 3.2 × 10−6 S cm−1, which increased to 3.4 × 10−1 S cm−1 after the annealing at 500 °C for 60 min. The σ’s of as-cast molybdovanadate glasses with x’s of 20–50 were ca. 1.1 × 10−7 or 1.2 × 10−7S cm−1, which increased to 2.1 × 10−2 (x = 20), 6.7 × 10−3 (x = 35) and 1.9 × 10−4 S cm−1 (x = 50) after the annealing at 500 °C for 60 min. It was concluded that the structural relaxation of distorted VO4 tetrahedra was directly related to the marked increase in the σ, as generally observed in several vanadate glasses.
  • N. Tamura; T. Tomai; N. Oka; I. Honma
    Applied Surface Science ELSEVIER SCIENCE BV 428 986 - 989 0169-4332 2018/01 [Refereed]
     
    The electrochemical properties of graphene edge has been attracted much attention. Especially, zigzag edge has high electrochemical activity because neutral radical exits on edge. However, due to a lack of efficient production method for zigzag graphene, the electrochemical properties of zigzag edge have not been experimentally demonstrated and the capacitance enhancement of carbonaceous materials in energy storage devices by the control in their edge states is still challenge. In this study, we fabricated zigzag-edge-rich graphene by a one-step method combining graphene exfoliation in supercritical fluid and anisotropic etching by catalytic nanoparticles. This efficient production of zigzag-edge-rich graphene allows us to investigate the electrochemical activity of zigzag edge. By cyclic voltammetry, we revealed the zigzag edge-introduced graphene exhibited unique redox reaction in aqueous acid solution. Moreover, by the calculation on the density function theory (DFT), this unique redox potential for zigzag edge-introduced graphene can be attributed to the proton-insertion/extraction reactions at the zigzag edge. This finding indicates that the graphene edge modification can contribute to the further increase in the capacitance of the carbon-based electrochemical capacitor. (C) 2017 Elsevier B.V. All rights reserved.
  • 重金属廃液の浄化: ポリアクリル酸ナトリウムによる銅イオン除去技術
    増田彩花; 石崎広晃; 木下遼介; 西田哲明; 岡伸人
    近畿大学産業理工学部研究報告かやのもり 27 1 - 4 2017/10 [Refereed]
  • Y. Nakayasu; T. Tomai; N. Oka; K. Shojiki; S. Kuboya; R. Katayama; L. Sang; M. Sumiya; I. Honma
    Thin Solid Films ELSEVIER SCIENCE SA 638 244 - 250 0040-6090 2017/09 [Refereed]
     
    A supercritical ethanol (scEtOH) environment, in which sulfur is highly soluble, can lead to safety improvements and cost reductions in the sulfurization process. In this study, the feasibility of the sulfurization process in scEtOH for the preparation of Cu2ZnSnS4 (CZTS) thin films at low temperature was verified with the purpose of creating a sustainable and cost-effective process for fabricating metal-sulfide solar cells. We found that to promote atomic diffusion of sulfur and achieve sulfurization at a low temperature, the presence of defects in the amorphous oxide thin film was preferable. Moreover, in thin film fabricated by sulfurization under ethanol, the crystal size was strongly affected by ethanol density. The grain size increased up to about 1 mu m as the ethanol density increased, and grain growth was remarkable, particularly in the high-density conditions of over 3.0 mol/L. Finally, we fabricated a crystalline CZTS thin film, which exhibited structural and optical properties comparable to those of a film fabricated using conventional vapor-phase sulfurization. For the prepared disordered-kesterite CZTS thin film with a Cu-poor and Zn-rich composition, photoluminescence measurements confirmed that the donor or acceptor defects engage in the emission of about 1.24 eV at 5 K, and UV-Vis measurement revealed a bandgap of 1.38 eV at room temperature. (C) 2017 Elsevier B.V. All rights reserved.
  • T. Ando; Y. Fujita; M. Kakinaga; N. Oka; T. Nishida
    Applied Water Science 7 (7) 4109 - 4115 2190-5495 2017/05 [Refereed]
  • T. Nishida; Y. Izutsu; M. Fujimura; K. Osouda; Y. Otsuka; S. Kubuki; N. Oka
    Pure and Applied Chemistry WALTER DE GRUYTER GMBH 89 (4) 419 - 428 0033-4545 2017/03 [Refereed]
     
    20BaO center dot 5ZnO center dot 5Fe(2)O(3)center dot 70V(2)O(5) glass annealed at 450 degrees C for 30 min showed a marked decrease in the electric resistivity (rho) from 4.0 x 10(5) to 4.8 Omega cm, while 20BaO center dot 5Cu(2)O center dot 5Fe(2)O(3)center dot 70V(2)O(5) glass from 2.0 x 10(5) to 5.0 Omega cm. As for the conduction mechanism, it proved that n-type semiconductor model in conjugation with the small polaron hopping theory was most probable. Since Zn-II and Cu-I have a 3d(10)-electron configuration in the outer-most orbital, Ga2O3 -and GeO2 -containing vanadate glasses were explored in this study. 20BaO center dot 5Ga(2)O(3)center dot 5Fe(2)O(3)center dot 70V(2)O(5) glass showed a less remarkable decrease of. from 4.5 x 10(5) to 100 Omega cm, and 20BaO center dot 5GeO(2)center dot 5Fe(2)O(3)center dot 70V(2)O(5) glass from 3.3 x 10(6) to 400 Omega cm. Activation energies for the conduction (E a) of GeO2 -and Ga2O3 -contaning glasses before the annealing were respectively estimated to be 0.42 and 0.41 eV. It proved that barium iron vanadate glass with a smaller E a value could attain the higher conductivity after the annealing at temperaures higher than the crystalization temperature.
  • N. Oka; A. Murata; S. Nakamura; J. Jia; Y. Iwabuchi; H. Kotsubo; Y. Shigesato
    APL Materials AMER INST PHYSICS 3 (10) 104407-1 - 104407-6 2166-532X 2015 [Refereed][Invited]
     
    A process based on reactive gas flow sputtering (GFS) for depositing visible-light active photocatalytic WO3 films at high deposition rates and with high film quality was successfully demonstrated. The deposition rate for this process was over 10 times higher than that achieved by the conventional sputtering process and the process was highly stable. Furthermore, Pt nanoparticle-loaded WO3 films deposited by the GFS process exhibited much higher photocatalytic activity than those deposited by conventional sputtering, where the photocatalytic activity was evaluated by the extent of decomposition of CH3CHO under visible light irradiation. The decomposition time for 60 ppm of CH3CHO was 7.5 times more rapid on the films deposited by the GFS process than on the films deposited by the conventional process. During GFS deposition, there are no high-energy particles bombarding the growing film surface, whereas the bombardment of the surface with high-energy particles is a key feature of conventional sputtering. Hence, the WO3 films deposited by GFS should be of higher quality, with fewer structural defects, which would lead to a decrease in the number of centers for electron-hole recombination and to the efficient use of photogenerated holes for the decomposition of CH3CHO. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
  • Y. Nakayasu; T. Tomai; N. Oka; I. Honma
    Appl. Phys. Express IOP PUBLISHING LTD 8 (2) 021201-1 - 021201-4 1882-0778 2015 [Refereed]
     
    Supercritical ethanol (scEtOH), with its high solubility and reducibility, can be used as a medium to fabricate chalcogenide semiconductors from stable solid chalcogen sources. We fabricated Cu2ZnSn(S,Se)(4) films via chalcogenization of Cu-Zn-Sn oxide precursor films using scEtOH to dissolve SeO2 and elemental sulfur (S-8). The S/Se molar ratio and the bandgap of Cu2ZnSn(S,Se)(4) films were controlled by changing the input ratio of selenium source (SeO2) to sulfur source (S-8). Analysis indicated that high-density atomic chalcogens are the dominant reactive species. This process may contribute to the development of non-vacuum fabrication methods for chalcogenide-semiconductor solar cells. (C) 2015 The Japan Society of Applied Physics
  • N. Oka; S. Yamada; T. Yagi; N. Taketoshi; J. Jia; Y. Shigesato
    Journal of Materials Research CAMBRIDGE UNIV PRESS 29 (15) 1579 - 1584 0884-2914 2014/08 [Refereed][Invited]
     
    We investigate the effect of dopant species and structure on the thermal conductivity of Sb-doped SnO2 (ATO) and Ta-doped SnO2 (TTO) films and compare the results with those of In2O3-, ZnO-, and TiO2-based transparent conductive films. The thermal conductivities (lambda) of polycrystalline ATO and TTO films are 4.4-4.9 and 4.7 W m(-1) K-1, respectively. The thermal conductivities via phonons (lambda(ph)) are almost identical for both dopant species (Sb and Ta): 4.3 and 4.5 W m(-1) K-1 for Sb and Ta, respectively, on average. These results for lambda(ph) are larger than that for Sn-doped In2O3 films (3.8 W m(-1) K-1) and considerably larger than that for amorphous ATO films (1.0 W m(-1) K-1). These facts lead us to conclude that the base-material species (SnO2 or In2O3) and structure (polycrystalline or amorphous) affect the thermophysical properties of ATO and TTO much more than the dopant species.
  • N. Oka; Y. Sanno; J. Jia; S. Nakamura; Y. Shigesato
    Appl. Surf. Sci. ELSEVIER SCIENCE BV 301 551 - 556 0169-4332 2014/04 [Refereed]
     
    In this study, a stable reactive sputtering process using a Ti-Nb alloy target was achieved by applying a plasma impedance feedback system. High-quality transparent conductive Nb-doped TiO2 (Nb:TiO2) films were fabricated with high reproducibility. The films were deposited on unheated substrate and subsequently annealed at 873 K under vacuum conditions (below 6.0 x 10(-4) Pa) for 1 h. During reactive sputtering, the feedback system precisely controlled the oxidation of the target surface in the so-called transition region. The post-annealing process yielded polycrystalline Nb:TiO2 films whose lattice defects decreased with increasing Nb concentration. An extremely low resistivity (7.2 x 10(-4) Omega cm) was achieved for Nb:TiO2 film with 60-70% transmittance in the visible region. The reactive sputtering using Ti-Nb alloys is considered to be a strong candidate for industrial-scale thin-film deposition. Furthermore, it can also control the metal-oxygen stoichiometry of Nb:TiO2 films precisely to achieve desirable properties for each industrial application. (C) 2014 Elsevier B.V. All rights reserved.
  • M. Kusayanagi; A. Uchida; N. Oka; J. Jia; S. Nakamura; Y. Shigesato
    Thin Solid Films Films ELSEVIER SCIENCE SA 555 93 - 99 0040-6090 2014 [Refereed]
     
    Al-doped ZnO (AZO) films were deposited on a fused silica glass substrate by reactive dc unbalanced magnetron sputtering using a Zn-Al (Al: 3.6 at.%) alloy target with an impedance control system. A very thin slightly reduced AZO buffer layer was inserted between the glass substrate and AZO films. For the AZO films deposited at 200 degrees C, the lowest resistivity in the absence of the buffer layer was 8.0 x 10(-4) Omega cm, whereas this was reduced to 5.9 x 10(-4) Omega cm after introducing a 5-nm-thick buffer layer. The transmittance for all the films was above 80% in the visible region. The effects of the buffer layer were analysed and discussed in detail. It is found that the insertion of the buffer layer can improve the crystallinity of the AZO film. (C) 2013 Elsevier B.V. All rights reserved.
  • N. Tsukamoto; S. Sensui; J. Jia; N. Oka; Y. Shigesato
    Thin Solid Films ELSEVIER SCIENCE SA 559 49 - 52 0040-6090 2014 [Refereed]
     
    Amorphous indium-zinc-oxide films were deposited in the "transition region" by reactive sputtering using an In-Zn alloy target with a specially designed double feedback system. The cathode voltage showed a V-and circle-shaped curve as a function of O-2 gas flow in the transition region, which differs from the S-shaped curve in Berg's model for reactive sputtering depositions. In-situ analyses with a quadrupole mass spectrometer combined with an energy analyzer revealed that the negative ions O-, O-2(-), InO-, and InO2-, with high kinetic energies corresponding to the cathode voltage, were generated at the partially oxidized target surface. Furthermore the positive ions O+, Ar+, In+, and Zn+ with rather low kinetic energies (around 10 eV) were confirmed to be generated by the charge exchange of sputtered neutral O, Ar, In and Zn atoms, respectively. (C) 2013 Elsevier B.V. All rights reserved.
  • J. Jia; A. Yoshimura; Y. Kagoya; N. Oka; Y. Shigesato
    Thin Solid Films ELSEVIER SCIENCE SA 559 69 - 77 0040-6090 2014 [Refereed]
     
    Al and Ga doped ZnO (AZO and GZO) films were deposited using an off-axis dc magnetron sputtering method. At the off-axis positions, both the mobility and carrier density increased, resulting in enhanced conductivity of both the AZO and GZO films due to an increase in the crystallinity. The lowest resistivities of the AZO and GZO films deposited at room temperature were 1.1 x 10(-3) Omega cm and 6.5 x 10(-4) Omega cm, respectively. Increasing the substrate temperature up to 130 C led to a decrease in the lowest resistivity to 6.1 x 10(-4) Omega cm for the AZO films. The transmittance of all films was above 80% in the visible region. These results suggest that off-axis magnetron sputtering might be a potentially effective deposition method with the reduced bombardments from high-energy particles. (C) 2014 Elsevier B. V. All rights reserved.
  • J. Jia; N. Oka; M. Kusayanagi; S. Nakatomi; Y. Shigesato
    Appl. Phys. Express IOP PUBLISHING LTD 7 (10) 105802-1 - 105802-4 1882-0778 2014 [Refereed]
     
    We observed the carrier transport phenomena in polycrystalline Al-doped ZnO (AZO) films with carrier densities ranging from 2.0 x 10(19) to 1.1 x 10(21) cm(-3). A comparison of the optical carrier density and Hall carrier density indicates that the conduction band in AZO films is nonparabolic above 2.0 x 10(20) cm(-3). A transition from grain boundary scattering to ionized impurity scattering is observed at a doping level of x 10(20) cm(-3). The trap density at the grain boundary increases with increasing Al concentration in the films, implying that the doping level plays a decisive role in the trap density. The excellent fitting of the optical mobility and carrier density using the Brooks-Herring model shows that the acceptor concentration increases with increasing doping level. (C) 2014 The Japan Society of Applied Physics
  • Sato Yasushi; Oka Nobuto; Nakamura Shin-ichi; Shigesato Yuzo
    Jpn J Appl Phys The Japan Society of Applied Physics 52 (12) 128007 - 128007-3 0021-4922 2013/12 
    The early stages of Sn-doped In2O3(ITO) film growth on amorphous SiO2(a-SiO2) surfaces were observed by atomic force microscopy (AFM) and transmission electron microscopy (TEM). AFM measurements clearly showed that the surface morphologies of the ITO films (3--6 nm in thickness) possessed an extended hill-and-valley structure. TEM analysis revealed that small ITO islands on the a-SiO2surface could aggregate, resulting in the formation of larger ITO islands approximately 15--30 nm in diameter. The combined results indicate that the ITO film growth on a-SiO2surfaces is similar to that on glass surfaces.
  • Y. Sato; N. Oka; S. Nakamura; Y. Shigesato
    Jpn. J. Appl. Phys. 52 (12) 128007-1 - 128007-3 0021-4922 2013 [Refereed]
     
    The early stages of Sn-doped In2O3 (ITO) film growth on amorphous SiO2 (a-SiO2) surfaces were observed by atomic force microscopy (AFM) and transmission electron microscopy (TEM). AFM measurements clearly showed that the surface morphologies of the ITO films (3-6nm in thickness) possessed an extended hill-and-valley structure. TEM analysis revealed that small ITO islands on the a-SiO2 surface could aggregate, resulting in the formation of larger ITO islands approximately 15-30 nm in diameter. The combined results indicate that the ITO film growth on a-SiO2 surfaces is similar to that on glass surfaces. © 2013 The Japan Society of Applied Physics.
  • J. Jia; N. Oka; Y. Shigesato
    Journal of Applied Physics AMER INST PHYSICS 113 (16) 163702-1 - 163702-7 0021-8979 2013 [Refereed]
     
    We investigated the dependence of valence-and core-level photoemission spectra of amorphous In2O3-ZnO (a-IZO) films on carrier density by using hard x-ray photoemission spectroscopy (h nu = 8000 eV). The valence band edge distinctly shifts toward high binding energy with the increase in carrier density from 0.80 to 3.96 x 10(20) cm(-3), and an abrupt jump for the shift of the valence band edge from high to low binding energy occurs at a carrier density of 4.76 x 10(20) cm(-3). After considering the effect of nonparabolic bandstructure, the shifts are still less than the width of the occupied conduction band, providing direct evidence for the band gap shrinkage. Our calculation results indicate that the contribution of the band gap shrinkage increases as the carrier density increases, which accords with the observations in doped conducting crystal materials, such as Sn doped In2O3. Moreover, it is found that the conduction electrons of a-IZO films are strongly perturbed by the ionization of core levels, which leads to obvious plasmon satellites in core photoemission spectra lines. (C) 2013 AIP Publishing LLC
  • S. Kawasaki; Y. Yamashita; N. Oka; T. Yagi; J. Jia; N. Taketoshi; T. Baba; Y. Shigesato
    Jpn. J. Appl. Phys. IOP PUBLISHING LTD 52 (6) 065802-1 - 065802-5 0021-4922 2013 [Refereed]
     
    We investigated the dependence of the thermal boundary resistance of the W/Al2O3 interface in W/Al2O3/W three-layered thin films on the interface morphology. The layered structures, Al2O3 thin layers with thicknesses from 1 to 50nm covered by top and bottom W layers with a thickness of 100 nm, were fabricated by magnetron sputtering using a W target (99.99%) and an Al2O3 target (99.99%). The fabrication of polycrystalline W and amorphous Al2O3 films was confirmed by structural analysis. The morphology of the bottom W layer/Al2O3 layer and Al2O3 layer/top W layer interfaces showed a wavelike structure with a roughness of about 1 nm. Thermophysical properties and thermal boundary resistance were measured by a pulsed light heating thermoreflectance technique. The thermal boundary resistance of the W/Al2O3 interface was 1.9 x 10(-9) m(2)K W-1, which corresponds to the thermal resistance of a 3.7-nm-thick Al2O3 film or a 120-nm-thick W film. (C) 2013 The Japan Society of Applied Physics
  • T. Yoshikawa; T. Yagi; N. Oka; J. Jia; Y. Yamashita; K. Hattori; Y. Seino; N. Taketoshi; T. Baba; Y. Shigesato
    Appl. Phys. Express JAPAN SOC APPLIED PHYSICS 6 (2) 021101-1 - 021101-3 1882-0778 2013 [Refereed]
     
    We investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zinc-oxide (a-IGZO) films. Films with a chemical composition of In : Ga : Zn = 1 : 1 : 0.6 were prepared by dc magnetron sputtering using an IGZO ceramic target and an Ar-O-2 sputtering gas. The carrier density of the films was systematically controlled from 10(14) to > 10(19) cm(-3) by varying the O-2 flow ratio. Their Hall mobility was slightly higher than 10 cm(2) .V-1 .s(-1). Those films were sandwiched between 100-nm-thick Mo layers; their thermal diffusivity, measured by a pulsed light heating thermoreflectance technique, was similar to 5.4 x 10(-7) m(2) .s(-1) and was almost independent of the carrier density. The average thermal conductivity was 1.4W.m(-1) .K-1. (C) 2013 The Japan Society of Applied Physics
  • N. Oka; M. Watanabe; K. Sugie; Y. Iwabuchi; H. Kotsubo; Y. Shigesato
    Thin Solid Films ELSEVIER SCIENCE SA 532 1 - 6 0040-6090 2013 [Refereed]
     
    In this study, WO3 films for electrochromic devices were deposited on a Sn-doped In2O3 substrate by hollow-cathode gas-flow sputtering using a pair of facing W metal targets. The sputtering power for all depositions was fixed at 1000 W (3.9 W/cm(2)). The deposited WO3 films were amorphous in structure. Static deposition rates were achieved to be higher by two orders of magnitude than those for conventional dc magnetron sputtering, as well as to be the comparable colouration efficiency. (C) 2012 Elsevier B.V. All rights reserved.
  • A. Murata; N. Oka; S. Nakamura; Y. Shigesato
    J. Nanosci. Nanotechnol. AMER SCIENTIFIC PUBLISHERS 12 (6) 5082 - 5086 1533-4880 2012/06 [Refereed]
     
    Visible-Light active photocatalytic tungsten trioxide (WO3) films were deposited at a substrate temperature of 800 degrees C by dc reactive magnetron sputtering using a W metal target. In addition, Platinum (Pt) was deposited on the WO3 film surfaces at room temperature, also by sputtering. In the early stages of Pt growth, formation of Pt nanoparticles could be expected because of the island structure observed in Volmer-Weber-type growth mode. The surface coverage of Pt on the WO3 films was estimated quantitatively by X-ray photoelectron spectroscopy and was found to be approximately 60% after 7 s deposition. High resolution electron microscopy (HREM) demonstrated that Pt nanoparticles with a diameter of about 2.5 nm were generated and dispersed uniformly on the entire surface area of the columnar polycrystalline WO3 films. These Pt-loaded films exhibited high photocatalytic activity in the decomposition of acetaldehyde (CH3CHO) under visible light irradiation.
  • N. Oka; T. Aoi; R. Hayashi; H. Kumomi; Y. Shigesato
    Applied Physics Express JAPAN SOC APPLIED PHYSICS 5 (7) 075802-1 - 075802-3 1882-0778 2012 [Refereed]
     
    Amorphous indium gallium zinc oxide (a-IGZO) films were fabricated using dc magnetron sputtering with water vapor (H2O or D2O) introduction. To determine the incorporation pattern of water, films were characterized by secondary ion mass, Fourier transform infrared, Raman, and hard Xray photoelectron spectroscopies. Chemically bound hydroxyl groups were observed, and more hydroxyl bonds existed nearer to the interface between the substrate and film than in the film. Furthermore, for a-IGZO films, subgap densities of states near valence band maxima increased with the H2O partial pressure during deposition, which can be attributed to defect-level generations due to H and O. (C) 2012 The Japan Society of Applied Physics
  • J. Jia; A. Takasaki; N. Oka; Y. Shigesato
    Journal of Applied Physics AMER INST PHYSICS 112 (1) 013718-1 - 013718-7 0021-8979 2012 [Refereed]
     
    The shift of the Fermi level in polycrystalline aluminum doped zinc oxide (AZO) films was studied by investigating the carrier density dependence of the optical band gap and work function. The optical band gap showed a positive linear relationship with the two-thirds power of carrier density n(e)(2/3). The work function ranged from 4.56 to 4.73 eV and showed a negative linear relationship with n(e)(2/3). These two phenomena are well explained on the basis of Burstein-Moss effect by considering the nonparabolic nature of the conduction band, indicating that the shift of Fermi level exhibits a nonparabolic nature of the conduction band for the polycrystalline AZO film. The variation of work function with the carrier density reveals that the shift of the surface Fermi level can be tailored by the carrier density in the polycrystalline AZO films. The controllability between the work function and the carrier density in polycrystalline AZO films offers great potential advantages in the development of optoelectronic devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733969]
  • N. Oka; K. Kimura; T. Yagi; N. Taketoshi; T. Baba; Y. Shigesato
    Journal of Applied Physics AMER INST PHYSICS 111 (9) 093701-1 - 093701-5 0021-8979 2012 [Refereed]
     
    Thermal diffusivity of Al-doped ZnO (AZO) films with a thickness of 200 nm was quantitatively analyzed using a "rear heating/front detection type" nanosecond thermoreflectance system. AZO monolayer and Mo/AZO/Mo three-layered films were prepared on synthesized silica substrates by DC magnetron sputtering using high density ceramic ZnO-Al2O3 (Al2O3: 2.5 wt. %) and Mo metal targets. The thermal diffusivity and electrical resistivity of the deposited AZO films ranged 1.8 x 10(-6) -2.4 x 10(-6) m(2) s(-1) and 2.3 x 10(-3) -5.9 x 10(-4) Omega cm, respectively. The thermal conductivity corresponding to the thermal diffusivity was one order of magnitude smaller than that of sintered AZO ceramics prepared from ZnO and Al2O3 powders. However, it was found to be larger than that of In2O3-based transparent conductive oxide (TCO) films with approximately the same electrical conductivity, thus implying that AZO can be considered an excellent material for diathermanous TCO circuits. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4706572]
  • C. Tasaki; N. Oka; T. Yagi; N. Taketoshi; T. Baba; T. Kamiyama; S. Nakamura; Y. Shigesato
    Jpn. J. Appl. Phys. JAPAN SOC APPLIED PHYSICS 51 (3) 035802-1 - 035802-5 0021-4922 2012 [Refereed]
     
    The thermophysical properties of Nb-doped TiO2 (Nb:TiO2) films were studied in terms of electrical conductivity and Nb concentration. The thermal diffusivity of Nb:TiO2 films with various Nb concentrations was investigated and found to range from (1.2-2.1) x 10(-6) m(2) s(-1). The thermal conductivity of Nb:TiO2 films with 8.5 at.% Nb concentration is proportional to the electrical conductivity in conformity with the Wiedemann-Franz law. The thermal conductivity carried by phonons, lambda(ph), of Nb:TiO2 films decreased with increasing Nb concentration. The mean free path of phonons, l(ph), in Nb:TiO2 films was estimated to be almost the same as the average distance between Nb impurities. The grain size was much larger than l(ph). Thus, phonon scattering by Nb impurities should be the dominant factor for the change in lambda(ph). (C) 2012 The Japan Society of Applied Physics
  • M. Imai; M. Kikuchi; N. Oka; Y. Shigesato
    J. Vac. Sci. Technol. A A V S AMER INST PHYSICS 30 (3) 031503-1 - 031503-5 0734-2101 2012 [Refereed]
     
    The authors examined the photocatalytic activity of WO3 films (thickness 500-600 nm) deposited on a fused quartz substrate heated at 350-800 degrees C by dc reactive magnetron sputtering using a W metal target under the O-2 gas pressure from 1.0 to 5.0 Pa. Films deposited at 800 degrees C under 5.0 Pa have excellent crystallinity of triclinic, P1(1) structure and a large surface area, as confirmed by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Exposure of acetaldehyde (CH3CHO) adsorbed onto the film surface to ultraviolet, visible, or standard fluorescence light induces oxidative photocatalytic decomposition indicated by a decrease in CH3CHO concentration and generation of CO2 gas. For all three types of irradiation, concentration ratio of decreased CH3CHO to increased CO2 is about 1:1, suggesting the possible presence of intermediates. The sputter-deposited WO3 film can be a good candidate as a visible light-responsive photocatalyst. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.3696876]
  • J. Takashima; N. Oka; Y. Shigesato
    Jpn. J. Appl. Phys. JAPAN SOC APPLIED PHYSICS 51 (5) 055501-1 - 055501-5 0021-4922 2012 [Refereed]
     
    We devised an effective method of deposition of photocatalytic WO3 films for the decomposition of volatile organic compounds. Amorphous WO3 films were deposited on unheated fused silica glass substrates by reactive DC magnetron sputtering with a W metal target, followed by crystallization through annealing at 300-800 degrees C in air. Under visible light irradiation, a film annealed at 400 degrees C proved significantly more effective than a WO3 film crystallized during deposition on a heated (800 degrees C) substrate for achieving photocatalytic decomposition of CH3CHO. Even more remarkable photocatalytic results were obtained for a film that was loaded with Pt nanoparticles after postannealing. (C) 2012 The Japan Society of Applied Physics
  • S.V. Green; M. Watanabe; N. Oka; G.A. Niklasson; C.G. Granqvist; Y. Shigesato
    Thin Solid Films ELSEVIER SCIENCE SA 520 (10) 3839 - 3842 0040-6090 2012 [Refereed]
     
    Electrochromic nickel oxide based thin films were prepared by reactive RF magnetron sputtering from metallic nickel in the presence of Ar, O-2 and H2O. The water vapor led to enhanced optical modulation and charge capacity. At a wavelength of 550 nm the bleached state transmittance was 0.73 and the transmittance for the colored state was 0.28 and 0.15 for water partial pressures of p(H2O)<10(-3) Pa and p(H2O) similar to 7 x 10(-2) Pa, respectively. The charge densities were 14 and 25 mC/cm(2) for p(H2O)<10(-3) Pa and P-H2O similar to 7 x 10(-2) Pa, respectively. The coloration efficiency was decreased with increased water partial pressure, from about 0.07 to 0.06 cm(2)/mC. Preliminary results show that the H2O promotes an amorphous structure and makes the films increasingly hydrous. (C) 2011 Elsevier B.V. All rights reserved.
  • N. Tsukamoto; N. Oka; Y. Shigesato
    Thin Solid Films ELSEVIER SCIENCE SA 520 (10) 3751 - 3754 0040-6090 2012 [Refereed]
     
    The kinetic energies of generated ions were investigated during the reactive sputtering process to deposit Al-doped ZnO (AZO) films using an Al-Zn alloy target. The sputtering system was equipped with specially designed double feedback system to stabilise the reactive sputtering processes and analysis was performed with a quadrupole mass spectrometer combined with an energy analyser. Negative ions O-, O-2(-), AlO- and AlO2- with high kinetic energies corresponding to cathode voltage are generated at the partially oxidised target surface, after which some of the ions undergo subsequent charge exchange and/or dissociation. Positive ions O+, Ar+, Zn+ and Al+ with lower kinetic energies (around 10 eV) are generated by charge exchange of sputtered neutral O, Ar, Zn and Al atoms, respectively. As the target surface oxidises, cathode voltage decrease, the flux of high-energy negative ions increases and the electrical properties of the AZO degrade by ion bombardment as well as the AZO films that are deposited by conventional magnetron sputtering using an AZO target. (C) 2011 Elsevier B.V. All rights reserved.
  • Y. Muto; S. Nakatomi; N. Oka; Y. Iwabuchi; H. Kotsubo; Y. Shigesato
    Thin Solid Films ELSEVIER SCIENCE SA 520 (10) 3746 - 3750 0040-6090 2012 [Refereed]
     
    Ta-doped SnO2 films were deposited on glass substrate (either unheated or heated at 200 C) by reactive magnetron sputtering with a Sn-Ta metal-sintered target using a plasma control unit (PCU) and mid-frequency (mf, 50 kHz) unipolar pulsing. The PCU feedback system precisely controlled the flow of the reactive and sputtering gases (O-2 and Ar, respectively) by monitoring either discharge impedance or the plasma emission of the atomic O* line at 777 nm. The planar target was connected to the switching unit, which was operated in unipolar pulse mode. Power density on the target was maintained at 4.4 W cm(-2) during deposition. The lowest obtained resistivity for the films deposited on heated substrate was 6.4 x 10(-3) Omega cm, where the deposition rate was 250 nm min(-1). (C) 2011 Elsevier B.V. All rights reserved.
  • N. Oka; Y. Kawase; Y. Shigesato
    Thin Solid Films ELSEVIER SCIENCE SA 520 (12) 4101 - 4105 0040-6090 2012 [Refereed]
     
    Sn-doped In2O3 (ITO) films were deposited on heated (200 degrees C) fused silica glass substrates by reactive DC sputtering with mid-frequency pulsing (50 kHz) and a plasma control unit combined with a feedback system of the optical emission intensity for the atomic O* line at 777 nm. A planar In-Sn alloy target was connected to the switching unit, which was operated in the unipolar pulse mode. The power density on the target was maintained at 4.4 W cm(-2) during deposition. The feedback system precisely controlled the oxidation of the target surface in "the transition region." The ITO film with lowest resistivity (3.1 x 10(-4) Omega cm) was obtained with a deposition rate of 310 nm min(-1) and transmittance in the visible region of approximately 80%. The deposition rate was about 6 times higher than that of ITO films deposited by conventional sputtering using an oxide target. (C) 2011 Elsevier B.V. All rights reserved.
  • J. Jia; Y. Muto; N. Oka; Y. Shigesato
    Mater. Res. Soc. Symp. Proc. 1454 245 - 251 0272-9172 2012 [Refereed]
     
    Ta doped SnO2 (TTO) films prepared on quartz glass substrates at 200°C were annealed in the air to investigate the annealing effect on the structural, the optical, and the electrical properties. It is shown that the annealing for TTO films resulted in beneficial effect on the electrical resistivity by improving the carrier density and Hall mobility. The lowest resistivity was 1.4 × 10-3 Ω cm obtained at 400°C annealing temperature. The scattering mechanism in TTO films was discussed from the optical and electrical perspectives. The variation in Hall mobility with increasing the annealing temperature may be attributed to the scattering from the ionized and neutral impurities in TTO films. © 2012 Materials Research Society.
  • N. Oka; K. Kato; T. Yagi; N. Taketoshi; T. Baba; Y. Shigesato
    Jpn. J. Appl. Phys. JAPAN SOC APPLIED PHYSICS 50 (11) 11RB02-1 - 11RB02-3 0021-4922 2011 [Refereed]
     
    To determine the thermal boundary resistance between N,N'-bis(1-naphthyl)-N,N'-diphenylbenzidine (alpha-NPD) and aluminum (Al) films, we prepared alpha-NPD films sandwiched between Al films (Al/alpha-NPD/Al); the nominal thicknesses of the alpha-NPD and Al films were 1-30 and 74 nm, respectively. Then, we used "rear heating/front detection type" picosecond and nanosecond thermoreflectance systems to directly observe the heat transfer through the film thickness. We found that the thermal boundary resistance between alpha-NPD and Al was 3.5 x 10(-9) m(2) K W-1, corresponding to the thermal resistance of a 0.9-nm-thick alpha-NPD film or a 720-nm-thick Al film. (C) 2011 The Japan Society of Applied Physics
  • T. Yagi; N. Oka; T. Okabe; N. Taketoshi; T. Baba; Y. Shigesato
    Jpn. J. Appl. Phys. JAPAN SOC APPLIED PHYSICS 50 (11) 11RB01-1 - 11RB01-5 0021-4922 2011 [Refereed]
     
    The thermal diffusivities of AlN thin films with a thickness of about 600nm deposited by reactive rf magnetron sputtering were measured by the pulsed light heating thermoreflectance technique. The AlN films contain oxygen impurities ranging from 1.1 to 13.6 at.% depending on the sputtering conditions. The measured thermal diffusivity increases from 1.5 x 10(-6) to 12 x 10(-6) m(2) s(-1) with the decrease in oxygen concentration. An X-ray diffraction study shows that the AlN lattice parameter of the c-axis decreases with the increase in oxygen concentration. The average crystal diameter of the AlN films derived from the X-ray diffraction peaks is 41 nm. The dependence of the thermal conductivity of the AlN films on the oxygen concentration was discussed on the basis of the thermal resistance induced by oxygen impurities and phonon scattering by grain boundaries. (C) 2011 The Japan Society of Applied Physics
  • C. Tasaki; N. Oka; T. Yagi; N. Taketoshi; T. Baba; T. Kamiyama; Y. Shigesato
    Netsu Bussei JAPAN SOCIETY OF THERMOPHYSICAL PROPERTIES 25 (3) 117 - 120 0913-946X 2011 [Refereed]
     
    TiO2 and Nb:TiO2 films with 300 nm-thickness were deposited on quartz glass substrates heated at 110°C by dc magnetron sputtering using reduced TiO2-x and Nb:TiO2-x targets with Nb concentrations of 3.7 and 9.5 at.%, and then post-annealed under vacuum at 600°C. In order to measure the thermal diffusivity, Mo/(TiO2 or Nb:TiO2)/Mo three-layered films, were prepared on quartz glass substrates. Thermal diffusivity was measured by 'rear heating/front detection type' nanosecond thermoreflectance system. As Nb concentration of the films increases, thermal diffusivity of the film decreased from 2.1×10-6 to 1.2×10-6 m2s-1. Mechanism of this decrease is attributed to enhancement of scattering of phonon induced by Nb atoms which is heavier than Ti.
  • Y. Muto; N. Oka; N. Tsukamoto; Y. Iwabuchi; H. Kotsubo; Y. Shigesato
    Thin Solid Films ELSEVIER SCIENCE SA 520 (4) 1178 - 1181 0040-6090 2011 [Refereed]
     
    SnO2 films doped with Sb (ATO) were deposited both on unheated glass substrates and on glass substrates that had been heated at 200 degrees C by reactive sputtering of an Sb-Sn alloy target with a plasma control unit (PCU) and mid-frequency (mf, 50 kHz) unipolar pulsing. The PCU feedback system monitors the oxidation states of target surface by detecting the sputtering cathode voltage (impedance control method). The mf pulse wave is approximately square-shaped; this helps to reduce arcing on the target when high power density is applied on the cathode. In case of the ATO depositions on the heated substrate at 200 degrees C in the "transition region" of reactive sputtering, the deposition rate was 280 nm/min, the lowest resistivity of the ATO films was 4.6x10(-3)Omega cm and the optical transmittance was over 80% in the visible region of light. (C) 2011 Elsevier B. V. All rights reserved.
  • N. Tsukamoto; T. Tazawa; N. Oka; M. Saito; Y. Shigesato
    Thin Solid Films ELSEVIER SCIENCE SA 520 (4) 1182 - 1185 0040-6090 2011 [Refereed]
     
    Using a quadrupole mass spectrometer combined with an energy analyser, we have investigated the in-situ energy distribution of highly energetic ions generated during reactive sputtering of In-Sn alloy (IT) targets and non-reactive sputtering of Sn-doped In2O3 (ITO) ceramic targets. Ar+, In+, O+, O-, O-2(-), InO- and InO2- ions with kinetic energies greater than 40 eV were clearly observed. Upon increasing the O-2 flow ratio for reactive sputtering, the surface of the IT target changes from metal (metal mode) to oxide (oxide mode) via a state of mixed metal and oxide (transition region). O- ions with the kinetic energy corresponding to cathode voltage are generated at the oxide layer, which expands upon the target surface with increasing O-2 flow ratio in the metal mode and the transition region. In contrast, the flux of 60-eV Ar+ ions decreases with increasing O-2 flow ratio. The presence of 125- and 200-eV In+ ions is attributed to the dissociation of InSnO2- and InO2 with the kinetic energy corresponding to cathode voltage, respectively, while the presence of 40- and 150-eV O+ ions is attributed to the dissociation of InO2- and O-2(-) with the kinetic energy corresponding to cathode voltage, respectively. (C) 2011 Elsevier B. V. All rights reserved.
  • K. Takahashi; N. Oka; M. Yamaguchi; Y. Seino; K. Hattori; S. Nakamura; Y. Sato; Y. Shigesato
    Jpn. J. Appl. Phys. JAPAN SOC APPLIED PHYSICS 50 (7) 075802-1 - 075802-5 0021-4922 2011 [Refereed]
     
    Ti-Si-N and Ti-Al-Si-N films, which possess high hardness due to the formation of a nanocomposite structure in the films, were deposited by reactive magnetron sputtering using alloy targets and then postannealed in air at temperatures ranging from 300 to 800 degrees C. The hardness of both the films decreased significantly as postannealing temperature increased. However, the hardness of Ti-Al-Si-N films postannealed up to 500 degrees C remained at more than 30 GPa, which was significantly higher than that of the Ti-Si-N films after the post annealings. Electron probe microanalyses and X-ray photoelectron spectroscopy revealed that Al2O3 phases were formed in the postannealed Ti-Al-Si-N films. Transmission electron microscopy with energy-dispersive X-ray analysis showed that the Al2O3 layer of the postannealed Ti-Al-Si-N films was formed 40 nm below the surface, whereas the depth of the TiO2-SiO2 layer of the postannealed Ti-Si-N films was 100 nm from the surface. These results indicate that Al2O3 phases existed at the surface of the Ti-Al-Si-N films and prevented the oxidation of the interior of the films during postannealing at high temperatures in air. (C) 2011 The Japan Society of Applied Physics
  • Y. Sato; T. Hashimoto; A. Miyamura; S. Ohno; N. Oka; K. Suzuki; D. Glöß; P. Frach; Y. Shigesato
    Jpn. J. Appl. Phys. JAPAN SOC APPLIED PHYSICS 50 (4) 045802-1 - 045802-10 0021-4922 2011 [Refereed]
     
    We fabricated dye-sensitized solar cells (DSCs) using TiO2 films deposited on various substrates by reactive magnetron sputtering with midfrequency pulsing and process control units, and evaluated their performance. Two pulse modes, i.e., unipolar pulse and pulse packet modes, were utilized to deposit TiO2. The highest conversion efficiency achieved was 3.7% when 10-mu m-thick TiO2 films were deposited on glass substrates coated with fluorine-doped tin oxide (FTO) using the unipolar pulse mode in the oxide mode and postannealing in air. On the other hand, the conversion efficiency achieved was 2.7% for cells with 10-mu m-thick TiO2 films deposited on glass substrates coated with FTO using the pulse packet mode without postannealing, and it dropped to 1.3% when the unipolar pulse mode was used. The relationships between the photocatalytic decomposition activity and the DSC characteristics with regard to the TiO2 films were investigated in detail. The reduction in the density of defects in the TiO2 films led to an improvement in both the photocatalytic activity and the DSC characteristics. (C) 2011 The Japan Society of Applied Physics
  • R. Endoh; T. Hirano; M. Takeda; M. Oishi; N. Oka; Y. Shigesato
    Mater. Res. Soc. Symp. Proc. MATERIALS RESEARCH SOC 1315 mm11-05 - 130 0272-9172 2011 [Refereed]
     
    The thermal conductivity of amorphous indium zinc oxide (IZO) thin films was measured by the 3 omega method. Three IZO films were prepared by dc magnetron sputtering method on Si substrate under different O-2 flow ratios (O-2 / [Ar+O-2]) of 0%, 1%, and 5%. The thermal conductivity of IZO films decreases with an increase in O-2 flow ratio, the values of the thermal conductivity were 3.4, 3.1 and 1.2 W m(-1) K-1 for O-2 flow ratios of 0%, 1%, and 5%, respectively. To investigate relationships among the thermal conductivity, the structure and other physical properties, we were carried out nanoindentation, Rutherford back scattering (RBS), electron spin resonance (ESR). The result of ESR measurements indicated that the amount of conduction electron in the IZO film decreases with increasing O-2 flow ratio. Increase of O-2 flow ratio reduces the amount of oxygen vacancies for providing free electrons. Therefore, decreasing thermal conductivity with an increase in O-2 flow ratio is attributed to decreasing conduction electrons as thermal carrier. On the other hand, the chemical composition of IZO films is independent of O-2 flow ratio. Furthermore, density, Young's modulus and hardness also show little changes with increasing O-2 flow ratio. Density, Young's modulus and hardness are strongly associated with the internal structure. It is probable that influence of oxygen vacancies on the internal structure of IZO film is negligibly small.
  • N. Oka; K. Kato; T. Yagi; N. Taketoshi; T. Baba; N. Ito; Y. Shigesato
    Jpn. J. Appl. Phys. JAPAN SOC APPLIED PHYSICS 49 (12) 121602-1 - 121602-4 0021-4922 2010 [Refereed]
     
    The thermal diffusivities of tris(8-hydroxyquinoline)aluminum (Alq(3)) and N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (alpha-NPD) films have been characterized quantitatively using a "rear heating/front detection-type" nanosecond thermoreflectance system. Alq(3) or alpha-NPD films sandwiched by Al films, Al/(Alq(3) or alpha-NPD)/Al three-layered films, were prepared by vacuum evaporation. Al acted as a reflective layer for pulse lasers in the thermoreflectance system. The nominal thicknesses of Alq(3) and alpha-NPD layers varied roughly from 30 to 100 nm. The thermal diffusivities of Alq(3) and alpha-NPD films were found to be (1.4-1.7) x 10(-7) and 1.4 x 10(-7) m(2) s(-1), respectively. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/JJAP.49.121602
  • T. Komoda; T. Iwakuma; M. Yamamoto; N. Oka; Y. Shigesato
    Advances in Science and Technology 75 65 - 73 2010 [Refereed]
  • Y. Nishi; K. Hirohata; N. Tsukamoto; Y. Sato; N. Oka; Y. Shigesato
    J. Vac. Sci. Technol. A A V S AMER INST PHYSICS 28 (4) 890 - 894 0734-2101 2010 [Refereed]
     
    Al-doped ZnO (AZO) films were deposited on quartz glass substrates, unheated and heated to 200 degrees C, using reactive sputtering with a special feedback system of discharge impedance combined with midfrequency pulsing. A planar Zn-Al alloy target was connected to the switching unit, which was operated in a unipolar pulse mode. The oxidation of the target surface was precisely controlled by a feedback system for the entire O(2) flow ratio including "the transition region." The deposition rate was about 10-20 times higher than that for films deposited by conventional sputtering using an oxide target. A deposition rate of AZO films of 390 nm/min with a resistivity of 3.8 X 10(-4) Omega cm and a transmittance in the visible region of 85% was obtained when the films were deposited on glass substrates heated to 200 degrees C with a discharge power of 4 kW. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3308621]
  • Y. Sato; K. Ishihara; N. Oka; Y. Shigesato
    J. Vac. Sci. Technol. A A V S AMER INST PHYSICS 28 (4) 895 - 900 0734-2101 2010 [Refereed]
     
    Spatial distribution of electrical properties of Al-doped ZnO (AZO) films deposited by magnetron sputtering was investigated. To adjust the intensity of bombardment by high-energy particles, the AZO films were deposited using Ar, Kr, or Xe gas with varying plasma impedance. The spatial distribution of the electrical properties clearly depends on the sputtering gas. In the case of using Kr or Xe, the resistivity of the films in front of the target center and erosion areas was significantly enhanced, in contrast with Ar. This was attributed to an enhancement in bombardment damage due to the increased sputtering voltages required for Kr or Xe discharges. The increase in plasma impedance was due to the smaller coefficients for secondary-electron emission of the target surface by Kr or Xe impingements, which leads to the larger sputtering voltage. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3319357]
  • N. Oka; H. Watanabe; Y. Sato; N. Ito; H. Tsuji; Y. Shigesato
    J. Vac. Sci. Technol. A A V S AMER INST PHYSICS 28 (4) 886 - 889 0734-2101 2010 [Refereed]
     
    The authors investigate the role of reduced molybdenum trioxide [MoO3-x (x <= 1)] films in organic light-emitting diodes, particularly from the viewpoint of the oxidation state of Mo. MoO3-x films were deposited by reactive sputtering under a mixture of argon (Ar) and oxygen (O-2). The O-2 gas-flow ratio (GFR) [O-2/(Ar+O-2)] was adjusted between 10% and 100%. Mo with six, five, and four valence electrons was detected in MoO3-x film deposited with an O-2 GFR of 10% and 12.5%, whereas, under higher O-2 GFRs, only six valence electrons for Mo in the MoO3-x film were detected. N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (alpha-NPD) layer, hole-transport material, were deposited over the MoO3-x layer by subsequent vacuum evaporation. At the alpha-NPD/MoO3-x interface, it was found that alpha-NPD cations were generated and that MoO3-x was reduced, which provided evidence of charge transfer across the interface by Raman spectroscopy and x-ray photoelectron spectroscopy. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3328822]
  • Y. Sato; Y. Sanno; C. Tasaki; N. Oka; T. Kamiyama; Y. Shigesato
    J. Vac. Sci. Technol. A A V S AMER INST PHYSICS 28 (4) 851 - 855 0734-2101 2010 [Refereed]
     
    Nb-doped anatase TiO2 films were deposited on unheated glass by dc magnetron sputtering using slightly reduced Nb-doped TiO2-x targets (Nb concentration: 3.7 and 9.5 at. %) with various hydrogen or oxygen flow ratios. After postannealing in a vacuum (6 x 10(-4) Pa) at 500 degrees C for 1 h, both films were crystallized into the polycrystalline anatase TiO2 structure. The resistivity decreased from 1.6 X 10(-3) to 6.3 X 10(-4) Omega cm with increasing Nb concentration from 2.8 to 8.0 at. %, where the carrier density increased from 5.4 X 10(20) to 2.0 X 10(21) cm(-3) and the Hall mobility was almost constant at 5-7 cm(2) V-1 s(-1). The films exhibited a high transparency of over 60%-80% in the visible region. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3358153]
  • N. Tsukamoto; D. Watanabe; M. Saito; Y. Sato; N. Oka; Y. Shigesato
    J. Vac. Sci. Technol. A A V S AMER INST PHYSICS 28 (4) 846 - 850 0734-2101 2010 [Refereed]
     
    The origin of high energy negative ions during deposition of aluminum doped zinc oxide (AZO) films by dc magnetron sputtering of an AZO (Al2O3: 2.0 wt %) target was investigated by in situ analyses using the quadrupole mass spectrometer combined with the electrostatic energy analyzer. High energy negative oxygen (O-) ions which possessed the kinetic energy corresponding to the cathode sheath voltage were detected. The maximum flux of the O- ions was clearly observed at the location opposite to the erosion track area on the target. The flux of the O- ions changed hardly with increasing O-2 flow ratio [O-2/(Ar+O-2)] from 0% to 5%. The kinetic energy of the O- ions decreased with decreasing cathode sheath voltage from 403 to 337 V due to the enhancement of the vertical maximum magnetic field strength at the cathode surface from 0.025 to 0.100 T. The AZO films deposited with the lower O- bombardment energy showed the higher crystallinity and improved the electrical conductivity. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3430556]
  • N. Ito; N. Oka; Y. Sato; Y. Shigesato
    Jpn. J. Appl. Phys. JAPAN SOC APPLIED PHYSICS 49 (7) 071103-1 - 071103-5 0021-4922 2010 [Refereed]
     
    The bombardment of various types of energetic ions during rf-superimposed dc magnetron sputter deposition was investigated in detail and their effects on the structural and electrical properties of Al-doped ZnO (AZO) films were analyzed. Aside from the expected energetic negative oxygen ions (i.e., O(-) and O(2)(-)), various other negative ions (i.e., AlO(-), AlO(2)(-), AlO(3)(-), ZnO(-), and ZnO(2)(-)) with a high energy were clearly observed. Such negative ions were found to be generated on the target surface and accelerated towards the substrate by the full cathode voltage. Furthermore, we found that the energy of these negative ions decreased with decreasing plasma impedance by superimposing rf power on dc sputtering. The resistivity of the AZO films deposited using the rf-superimposed dc sputtering was much lower than that of the films deposited using conventional dc sputtering. Such a decrease in resistivity should be attributed to reducing the damage of AZO films by suppressing the bombardment energies of various types of energetic negative ions impinging on a growing film surface. (C) 2010 The Japan Society of Applied Physics
  • Y. Sato; T. Ashida; N. Oka; Y. Shigesato
    Appl. Phys. Express JAPAN SOC APPLIED PHYSICS 3 (6) 061101-1 - 061101-3 1882-0778 2010 [Refereed]
     
    Carrier density dependence of the optical band gap and work function were investigated in undoped and Sn-doped In2O3 films. The optical band gap and the work function of the films showed clear positive and negative linear relationships, respectively, with two-thirds power of the carrier density. Optical band gaps increased from 3.8 to 4.3 eV when the carrier density increased from 8.8 x 10(19) to 8.2 x 10(20) cm(-3), whereas work functions decreased from 5.5 to 4.8 eV. These variations could be attributed to the shift in the Fermi energy with varying carrier density in highly degenerated semiconductors. (C) 2010 The Japan Society of Applied Physics
  • N. Ito; S. Miyatake; N. Tsukamoto; N. Oka; Y. Sato; Y. Shigesato
    Jpn. J. Appl. Phys. JAPAN SOC APPLIED PHYSICS 49 (4) 041105-1 - 041105-5 0021-4922 2010 [Refereed]
     
    In-situ analyses on reactive sputtering processes used to deposit photocatalytic TiO2 were carried out using a quadrupole mass spectrometer combined with an energy analyzer. High-energy negative oxygen ions (O-) accelerated by the cathode sheath electric field of several hundred volts and fragments sputtered from the target were analyzed in relation to the oxygen flow ratio and total gas pressure (P-tot). With increasing the oxygen flow ratio over 15%, the deposition rate decreased markedly where the target surface was fully oxidized confirmed by in-vacuo X-ray photoelectron spectroscopy analysis on the target surface. High-energy O- ions with a kinetic energy of several hundred eV corresponding quantitatively to the full cathode voltage were distinctly observed. Such high-energy O- species dominant at P-tot = 1.0 Pa showed a marked decrease and disappeared at 3.0 Pa. The photocatalytic activity of the anatase TiO2 films deposited at 3.0 Pa was much higher than that of the film deposited at 1.0 Pa, which could be attributed to the presence of many more recombination centers introduced by the bombardment of high-energy O- ions. (C) 2010 The Japan Society of Applied Physics
  • N. Oka; R. Arisawa; A. Miyamura; Y. Sato; T. Yagi; N. Taketoshi; T. Baba; Y. Shigesato
    Thin Solid Films ELSEVIER SCIENCE SA 518 (11) 3119 - 3121 0040-6090 2010 [Refereed]
     
    The thermal diffusivity of aluminum oxide (Al(2)O(3)) films and the thermal boundary resistance between Al(2)O(3) and molybdenum (Mo) films were investigated using 'rear heating/front detection (RF) type' picosecond and nanosecond thermoreflectance systems. Amorphous Al(2)O(3) films sandwiched between Mo films (Mo/Al(2)O(3)/Mo) were prepared on fused silica substrates by RF magnetron sputtering using Al(2)O(3) and Mo targets. The thicknesses of the Al(2)O(3) and Mo layers were 0.5-100 nm and 70 nm, respectively. The thermal diffusivity of the amorphous Al(2)O(3) films was found to be 9.5 x 10(-7) m(2)/s. The thermal boundary resistance between Al(2)O(3) and Mo was 1.5 x 10(-9) m(2)K/W, corresponding to the thermal resistance of a 4.2 nm thick Al(2)O(3) film or a 77 nm thick Mo film. However, the thermal diffusivity of the amorphous Al(2)O(3) film is approximately one twelfth that of bulk polycrystalline Al(2)O(3). This difference was attributed to the smaller mean free path of phonons in amorphous Al(2)O(3) due to its disordered structure. (C) 2009 Elsevier B.V. All rights reserved.
  • T. Aoi; N. Oka; Y. Sato; R. Hayashi; H. Kumomi; Y. Shigesato
    Thin Solid Films ELSEVIER SCIENCE SA 518 (11) 3004 - 3007 0040-6090 2010 [Refereed]
     
    Amorphous indium-gallium-zinc-oxide (a-IGZO) films were deposited by dc magnetron sputtering with H2O introduction and how the H2O partial pressure (P-H2O) during the deposition affects the electrical properties of the films was investigated in detail Resistivity of the a-IGZO films increased dramatically to over 2 x 10(5) Omega cm with increasing P-H2O to 2.7 x 10(-2) Pa while the hydrogen concentration in the films increased to 2 0 x 10(21) cm(-3) TFTs using a-IGZO channels deposited under P-H2O at 1 6-8.6 x 10(-2) Pa exhibited a field-effect mobility of 1.4-3 0 cm(2)/Vs. subthreshold swing of 1 0-1.6 V/decade and on-off current ratio of 3 9 x 10(7)-1.0 x 10(8). (C) 2009 Elsevier B V All rights reserved
  • K. Hirohata; Y. Nishi; N. Tsukamoto; N. Oka; Y. Sato; I. Yamamoto; Y. Shigesato
    Thin Solid Films ELSEVIER SCIENCE SA 518 (11) 2980 - 2983 0040-6090 2010 [Refereed]
     
    Al-doped ZnO (AZO) films were deposited on fused silica glass substrates unheated or heated at 200 degrees C by reactive dc sputtering using a Zn-Al alloy target with mid-frequency pulsing (50 kHz) and the plasma control unit with a feedback system of the optical emission intensity of the atomic O* line at 777 nm to control oxygen gas flow The stable and reproducible depositions were successfully carried out in the transition region The deposition rates attained in this study were about 10-20 times higher than the one by conventional sputtering using oxide targets. The AZO films with the lowest resistivity of 3 8 x 10(-4) Omega cm was deposited on the substrate heated at 200 degrees C with a sputter power of 4 kW, where the deposition rate was 385 nm/min. (C) 2009 Elsevier B V All rights reserved
  • Characterization of amorphous indium-gallium-zinc-oxide (a-IGZO) films deposited by dc magnetron sputtering with H2O introduction
    T. Aoi; N. Oka; Y. Sato; R. Hayashi; H. Kumomi; Y. Shigesato
    Mater. Res. Soc. Symp. 1109 (Symposium B) 92 - 97 2009/12 [Refereed]
  • Y. Sato; J. Kiyohara; A. Hasegawa; T. Hattori; M. Ishida; N. Hamada; N. Oka; Yuzo Shigesato
    Thin Solid Films ELSEVIER SCIENCE SA 518 (4) 1304 - 1308 0040-6090 2009 [Refereed]
     
    Inverse spinel zinc stannate (Zn2SnO4, ZTO) films were deposited onto fused quartz glass substrates heated at 800 degrees C by rf magnetron sputtering using a ceramic ZTO target (Zn:Sn = 2:1). H-2 flow ratios [H-2/(Ar + H-2)] were controlled from 0 to 30% during the depositions. ZTO films deposited at 800 degrees C possessed a polycrystalline inverse spinel structure. The lowest resistivity of 1.1 X 10(-2) Omega cm was obtained for a ZTO film deposited at 20% H-2 flow ratio. The transmittance of the ZTO film was approximately 80% in the visible region. (C) 2009 Elsevier B.V. All rights reserved.
  • Y. Sato; S. Nakamura; N. Oka; Y. Shigesato
    Appl. Phys. Express JAPAN SOC APPLIED PHYSICS 2 (9) 095501-1 - 095501-3 1882-0778 2009 [Refereed]
     
    Early stages of film growth for Sn-doped In2O3 (ITO) deposited on amorphous carbon (a-C) films by dc magnetron sputtering were investigated by transmission electron microscopy (TEM). ITO islands appeared as dark regions in the TEM images, and their density and size increased with increasing deposition time. Furthermore, electron diffraction analyses revealed that the intensity of the ring pattern for In2O3(222) gradually increased with increasing deposition time. This indicated that crystallized ITO islands were formed on the a-C surface in the early stages of the film growth. (C) 2009 The Japan Society of Applied Physics
  • Y. Sato; K. Yanagisawa; N. Oka; S. Nakamura; Y. Shigesato
    J. Vac. Sci. Technol. A A V S AMER INST PHYSICS 27 (5) 1166 - 1171 0734-2101 2009 [Refereed]
     
    Al-doped ZnO (AZO) films were sputter deposited on glass substrates heated at 200 degrees C under incident angles of sputtered particles at 0 degrees (incidence normal to substrate), 20 degrees, 40 degrees, 60 degrees, and 80 degrees. In the case of normal incidence, x-ray diffraction pole figures show a strong [001] preferred orientation normal to the film surface. In contrast, in the case wherein the incident angles were higher than 60 degrees, the [001] orientation inclined by 25 degrees-35 degrees toward the direction of sputtered particles. Transmission electron microscopy revealed that the tilt angle of the [001] orientation increased with increasing angle of the incident sputtered particles, whereas the columnar structure did not show any sign of inclination with respect to the substrate plane.
  • T. Ashida; A. Miyamura; N. Oka; Y. Sato; T. Yagi; N. Taketoshi; T. Baba; Y. Shigesato
    Journal of Applied Physics AMER INST PHYSICS 105 (7) 073709  0021-8979 2009 [Refereed]
     
    Thermal diffusivity of polycrystalline tin-doped indium oxide (ITO) films with a thickness of 200 nm has been characterized quantitatively by subnanosecond laser pulse irradiation and thermoreflectance measurement. ITO films sandwiched by molybdenum (Mo) films were prepared on a fused silica substrate by dc magnetron sputtering using an oxide ceramic ITO target (90 wt % In(2)O(3) and 10 wt % SnO(2)). The resistivity and carrier density of the ITO films ranged from 2.9 x 10(-4) to 3.2 x 10(-3) Omega cm and from 1.9 x 10(20) to 1.2 x 10(21) cm(-3), respectively. The thermal diffusivity of the ITO films was (1.5-2.2) x 10(-6) m(2)/s, depending on the electrical conductivity. The thermal conductivity carried by free electrons was estimated using the Wiedemann-Franz law. The phonon contribution to the heat transfer in ITO films with various resistivities was found to be almost constant (lambda(ph) = 3.95 W/m K), which was about twice that for amorphous indium zinc oxide films. (C) 2009 American Institute of Physics. [DOI:10.1063/1.3093684]
  • Nb doped TiO2 films with low resistivity deposited by dc magnetron sputtering using a TiO2-x target for transparent conductive electrodes
    Y. Sato; Y. Sanno; N. Oka; T. Kamiyama; Y. Shigesato
    Mater. Res. Soc. Symp. Proc. 1109E B03-26  2009 [Refereed]
  • Properties of IGZO films deposited by Dc Magnetron sputtering with H2O introduction
    T. Aoi; N. Oka; Y. Sato; R. Hayashi; H. Kumomi; Y. Shigesato
    Mater. Res. Soc. Symp. Proc. 1109E B03-09  2009 [Refereed]
  • High rate deposition of Al-doped ZnO (AZO) by reactive sputtering (1); Unipolar pulsing with plasma emission control
    K. Hirohata; Y. Nishi; N. Oka; Y. Sato; I. Yamamoto; Y. Shigesato
    Mater. Res. Soc. Symp. Proc. 1109E B03-07  2009 [Refereed]
  • Development of Information Platform for Data Exchange between Heterogeneous Material Data Resources
    T. Ashino; N. Oka
    Proc. of Materials Science and Technology 3 1851 - 1861 2007/09 [Refereed]
  • J. Jia; S. Iwata; Y. Seida; Y. Kaneta; N. Oka; Z. Zhang
    Data Science Journal Ubiquity Press Ltd 6 S206 - S219 1683-1470 2007 [Refereed]
     
    It is widely accepted that colloids play an important role in the contaminant migration process at present. However, the colloid deposition structure on rock surfaces has scarcely been studied. In this paper, preliminary results for a fractal characterization for colloid deposition in saturated fractures are presented, which consider the pH value, ionic strength, and flow rate of the solution. Under different chemical conditions, deposition behavior obviously changed, and fractal analysis appears to be an effective tool to capture the evolution and general behavior of depositions. Scanning Electron Microscopy (SEM) is used to observe the colloidal growth on granite surfaces and to acquire the visual image on a detailed level. The images are analyzed for their mass fractal dimensions. The influence on colloid fractal deposition is discussed.
  • T. Ashino; N. Oka
    Data Science Journal Ubiquity Press Ltd 6 S847 - S852 1683-1470 2007 [Refereed]
     
    Every material database on the Internet has a different data schema. There are some trial attempts to define unified schema for material databases, but since the structure of scientific data is very complicated and changes dynamically, defining a complete data schema is an impossible task. There are two major approaches for material data standards: one is MatDB, an attempt to define precise and detailed metadata, and the other is MatML, which only defines a framework. However, there is a third way: loose syndication, such as blogs with RSS. RSS, RDF Site Summary, or Really Simple Syndication, was developed to summarize document pages, but it can be extended to describe metadata of factual databases. In this presentation, an RSS extension for material database summaries is discussed.
  • 材料データベース共通プラットフォームの開発
    芦野俊宏; 門馬義雄; 馬場哲也; 山崎政義; 岡伸人
    JCOSSAR2007論文集, 日本学術会議 663 - 669 2007 [Refereed]
  • N. Oka; S. Iwata
    Journal of Japan Society of Information and Knowledge Japan Society of Information and Knowledge 17 (1) 32 - 40 0917-1436 2007 [Refereed]
     
    A web platform has been developed for experts to solve a given problem strategically by taking advantage of available information- data and/or knowledge. Information handled here are contexts (causal relation, consequence and time dependent properties), contents (textual information about specialized information and values in databases), and know-how (how to use computerized resources including simulation codes). It is the main concern of this prototype platform that a balance of sharing of information and appreciation of intellectual property right. This platform was used among materials experts in US and Japan through internet, and the results by such test users were reported.
  • OKA Nobuto
    Joho Chishiki Gakkaishi Japan Society of Information and Knowledge 15 (4) 23 - 32 0917-1436 2005 
    Complexity in an event makes it difficult to solve its problems. One of the factors, contributing to the difficulty, is that each player finds out "his/her" truth with reference to his/her own "local" data and model. In this study, a Data Utilization System aiming at consensus-building was proposed. This was developed using the Java language.

Books etc

  • ナノ・マイクロスケール熱物性ハンドブック
    日本熱物性学会 (Contributor6-2-6有機薄膜、6-4-2透明導電性薄膜)養賢堂 2014/07
  • 透明導電膜の技術 改訂3版
    日本学術振興会; 透明酸化物光; 電子材料; 委員会 (Contributor3・6 熱・機械的性質、8・6 熱的特性の測定法)オーム社 2014/04
  • カーボン材料実験技術（製造・合成編）－クラシックカーボンからナノカーボンまで－ [炭素材料学会 (編集)]
    岡 伸人; 笘居高明; 本間 格 (Contributor2-11. 超臨界流体によるグラフェンの量産化技術)株式会社国際文献社 2013/11

Conference Activities & Talks

  • Nobuto Oka; Takahisa Sakuragi; Ayaka Fukuchi; Hyuga Nakahara; Risa Nakamura; Masayoshi Yuasa; Tetsuaki Nishida
    TCM-TOEO 2023 (Symposium S-2, MRM2023)  2023/12
  • Nobuto Oka; Ryota Imamura; Ayaka Fukuchi; Hyuga Nakahara; Risa Nakamura; Junjun Jia; Masayoshi Yuasa; Tetsuaki Nishida
    TCM-TOEO 2023 (Symposium S-2, MRM2023)  2023/12
  • Characterization of Eco-friendly Potassium Vanadate Glasses Containing Iron of Higher Oxidation States  [Not invited]
    Risa Nakamura; Saeko Matsuo; Risa Yamauchi; Ayaka Fukuchi; Tetsuaki Nishida; Nobuto Oka
    TCM-TOEO 2023 (Symposium S-2, MRM2023)  2023/12
  • Study of the Crystallization Mechanism of Amorphous Ga2O3 Films Deposited by RF Sputtering  [Not invited]
    Risa Nakamura; Junjun Jia; Ayaka Fukuchi; Eisuke Magome; Tetsuaki Nishida; Nobuto Oka
    TCM-TOEO 2023 (Symposium S-2, MRM2023)  2023/12
  • Study of Crystallization Mechanism of Amorphous WO3 Films Deposited by RF Sputtering  [Not invited]
    Ayaka Fukuchi; Junjun Jia; Risa Nakamura; Eisuke Magome; Tetsuaki Nishida; Nobuto Oka
    TCM-TOEO 2023 (Symposium S-2, MRM2023)  2023/12
  • Charge and Discharge Characteristics of CrIII-doped Vanadate Glasses Developed for Cathode Active Materials of Lithium-ion Batteries  [Not invited]
    Ayaka Fukuchi; Shunsuke Matsusako; Yuma Morimoto; Risa Nakamura; Masakazu Haruta; Tetsuaki Nishida; Nobuto Oka
    TCM-TOEO 2023 (Symposium S-2, MRM2023)  2023/12
  • Charge and Discharge properties of Li3Fe2(PO4)3 thin film electrodes for transparent solid-state batteries  [Not invited]
    Kouki Kuchimachi; Ryota Kawaguchi; Nobuto Oka; Masakazu Haruta
    第84回応用物理学会秋季学術講演会  2023/09
  • Risa Nakamura; Ayaka Fukuchi; Takahisa Sakuragi; Masayoshi Yuasa; Tetsuaki Nishida; Nobuto Oka
    第84回応用物理学会秋季学術講演会  2023/09
  • Study on crystallization of amorphous WO3 films using in-situ X-ray diffraction  [Not invited]
    Ayaka Fukuchi; Junjun Jia; Risa Nakamura; Eisuke Magome; Tetsuaki Nishida; Nobuto Oka
    第84回応用物理学会秋季学術講演会  2023/09
  • Study on crystallization mechanism of amorphous Ga2O3 films deposited by RF sputtering  [Not invited]
    Risa Nakamura; Junjun Jia; Ayaka Fukuchi; Eisuke Magome; Tetsuaki Nishida; Nobuto Oka
    第84回応用物理学会秋季学術講演会  2023/09
  • Securing Material Data Management: Blockchain's Promise in Delivering Reliability and Trustworthiness  [Not invited]
    I Gede Agus; Krisna Warmayana; Nobuto Oka
    近畿大学 院生サミット  2023/08
  • ワイドギャップ半導体材料Ga2O3薄膜の結晶化に関する研究  [Not invited]
    中村理紗; 西田哲明; 岡伸人
    近畿大学 院生サミット  2023/08
  • 高分子ゲルによるめっき廃液中のNiおよびZnの除去  [Not invited]
    福地彩夏; 西田哲明; 岡伸人
    近畿大学 院生サミット  2023/08
  • 岡伸人; 福地彩夏; 中村理紗; 西田哲明
    福岡県環境教育学会 第26回年会  2023/08
  • 高酸化状態の鉄を含むバナジン酸塩ガラスによる環境浄化 、および環境教育  [Not invited]
    中村理紗; 福地彩夏; 西山沙希; 西田哲明; 岡伸人
    福岡県環境教育学会 第26回年会  2023/08
  • ゼリー状材料による重金属 (Ni, Zn) 廃液浄化および環境教育  [Not invited]
    福地彩夏; 久保萌花; 中村理紗; 西田哲明; 岡伸人
    福岡県環境教育学会 第26回年会  2023/08
  • Hyuga Nakahara; Takahisa Sakuragi; Masayoshi Yuasa; Tetsuaki Nishida; Nobuto Oka
    第60回 化学関連支部合同九州大会  2023/07
  • Study on crystallization mechanism of amorphous Ga2O3 film  [Not invited]
    Risa Nakamura; Junjun Jia; Ayaka Fukuchi; Eisuke Magome; Tetsuaki Nishida; Nobuto Oka
    第60回 化学関連支部合同九州大会  2023/07
  • Study on crystallization mechanism of amorphous WO3 film  [Not invited]
    Ayaka Fukuchi; Junjun Jia; Risa Nakamura; Eisuke Magome; Tetsuaki Nishida; Nobuto Oka
    第60回 化学関連支部合同九州大会  2023/07
  • Nobuto Oka
    IUMRS-ICAM & ICMAT 2023 (11th International Conference on Materials for Advanced Technologies)  2023/06
  • Visible-light Active Photocatalyst Using Hydrothermally Synthesized Carbon-doped TiO2 Nanoparticles  [Not invited]
    Risa NAKAMURA; Rika MIYOSHI; Ayaka FUKUCHI; Hyuga NAKAHARA; Tetsuaki NISHIDA; Nobuto OKA
    IUMRS-ICAM & ICMAT 2023 (11th International Conference on Materials for Advanced Technologies)  2023/06
  • Ayaka FUKUCHI; Yuki FUJITA; Naomi YAMAGUCHI; Hyuga NAKAHARA; Risa NAKAMURA; Tetsuaki NISHIDA; Nobuto OKA
    IUMRS-ICAM & ICMAT 2023 (11th International Conference on Materials for Advanced Technologies)  2023/06
  • Study of Potassium Vanadate Glass Containing More Highly Oxidized Iron  [Not invited]
    Risa NAKAMURA; Saeko MATSUO; Ayaka FUKUCHI; Hyuga NAKAHARA; Tetsuaki NISHIDA; Nobuto OKA
    IUMRS-ICAM & ICMAT 2023 (11th International Conference on Materials for Advanced Technologies)  2023/06
  • Hyuga NAKAHARA; Takahisa SAKURAGI; Ayaka FUKUCHI; Risa NAKAMURA; Msayoshi YUASA; Tetsuaki NISHIDA; Nobuto OKA
    IUMRS-ICAM & ICMAT 2023 (11th International Conference on Materials for Advanced Technologies)  2023/06
  • Hyuga NAKAHARA; Ryota IMAMURA; Ayaka FUKUCHI; Risa NAKAMURA; Msayoshi YUASA; Tetsuaki NISHIDA; Nobuto OKA
    IUMRS-ICAM & ICMAT 2023 (11th International Conference on Materials for Advanced Technologies)  2023/06
  • Cathode Active Materials Using CrIII-containing Vanadate Glass for Lithium-ion Battery  [Not invited]
    Ayaka FUKUCHI; Shunsuke MATSUSAKO; Yuma MORIMOTO; Hyuga NAKAHARA; Risa NAKAMURA; Masakazu HARUTA; Tetsuaki NISHIDA; Nobuto OKA
    IUMRS-ICAM & ICMAT 2023 (11th International Conference on Materials for Advanced Technologies)  2023/06
  • コバルト含有バナジン酸塩ガラスを空気極触媒とする金属空気電池の開発
    中原日向; 櫻木貴久; 松尾紗絵子; 福地彩夏; 森元悠眞; 湯浅雅賀; 西田哲明; 岡伸人
    セラミックス協会九州支部2022秋季研究発表会  2022/11
  • Vanadate glasses containing different metal oxides applied to rechargeable batteries  [Invited]
    Nobuto Oka; Tetsuaki Nishida
    TCM-TOEO2022 (8th International Symposium on Transparent Conductive Materials & 12th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics)  2022/10
  • Oxygen reduction and evolution reactions on the electrocatalyst of Co-containing vanadate glass developed for metal-air battery
    S. Matsuo; T. Sakuragi; A. Fukuchi; H. Nakahara; Y. Morimoto; M. Yuasa; T. Nishida; N. Oka
    TCM-TOEO2022 (8th International Symposium on Transparent Conductive Materials & 12th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TCM-TOEO 2023))  2022/10
  • Development of Potassium Vanadate Glass containing Iron of Higher Oxidation States
    S. Matsuo; G. Nishimura; A. Fukuchi; H. Nakahara; Y. Morimoto; T. Nishida; N. Oka
    TCM-TOEO2022 (8th International Symposium on Transparent Conductive Materials & 12th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TCM-TOEO 2023))  2022/10
  • Cathode active material containing vanadate glass developed for lithium-ion battery
    A. Fukuchi; S. Matsusako; Y. Morimoto; S. Matsuo; H. Nakahara; M. Haruta; T. Nishida; N. Oka
    TCM-TOEO2022 (8th International Symposium on Transparent Conductive Materials & 12th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TCM-TOEO 2023))  2022/10
  • Substitutional Effect of Tin or Indium on Highly Conductive Barium Iron Vanadate Glass: Structure and Electrical Conductivity
    A. Fukuchi; Y. Fujita; N. Yamaguchi; S. Shiba; S. Matsuo; H. Nakahara; Y. Morimoto; S. Kubuki; T. Nishida; N. Oka
    TCM-TOEO2022 (8th International Symposium on Transparent Conductive Materials & 12th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TCM-TOEO 2023))  2022/10
  • 高分子ゲルによる工業排水中の低濃度NiおよびZnの除去技術の開発
    福地彩夏; 久保萌花; 松尾紗絵子; 中原日向; 森元悠眞; 西田哲明; 岡伸人
    近畿大学 院生サミット  2022/10
  • 液中プラズマ法により合成したカーボンナノ粒子空気極触媒による 空気電池の開発
    中原日向; 今村涼太; 松尾紗絵子; 森元悠眞; 福地彩夏; 湯浅雅賀; 西田哲明; 岡伸人
    近畿大学 院生サミット  2022/10
  • INDUSTRIAL APPLICATIONS OF HIGHLY CONDUCTIVE VANADATE GLASS CONTAINING IRON(III)  [Invited]
    Tetsuaki Nishida; Shiro Kubuki; Nobuto Oka
    International Symposium on the Industrial Applications of the Mössbauer Effect (ISIAME2022)  2022/09
  • APPLICATION OF VANADATE GLASSES CONTAINING DIFFERENT METAL OXIDES TO RECHARGEABLE BATTERIES  [Invited]
    Nobuto Oka; Tetsuaki Nishida
    International Symposium on the Industrial Applications of the Mössbauer Effect (ISIAME2022)  2022/09
  • 酸化バナジウムを主成分とす るガラスによる Li イオン電池用正極活物質の開発 (受賞: 優秀発表賞)
    森元悠眞; 松迫駿介; 松尾紗絵子; 中原日向; 福地彩夏; 春田正和; 西田哲明; 岡伸人
    福岡県環境教育学会第25回年会  2022/08
  • カーボンナノ材料を空気極触媒とした空気電池の開発
    中原日向; 今村涼太; 松尾紗絵子; 森元悠眞; 福地彩夏; 湯浅雅賀; 西田哲明; 岡伸人
    福岡県環境教育学会第25回年会  2022/08
  • 重金属廃液を浄化するためのゼリー状材料の開発および環境教育 (受賞: 優秀発表賞)
    福地彩夏; 久保萌花; 松尾紗絵子; 中原日向; 森元悠眞; 西田哲明; 岡伸人
    福岡県環境教育学会第25回年会  2022/08
  • 清浄インテリア実現を目的とした殺菌光触媒塗料の開発
    岡伸人; 松尾紗絵子; 尾崎歩; 福地彩夏; 中原日向; 森元悠眞; 森岡陽介; 堀英祐; 西田哲明
    福岡県環境教育学会第25回年会  2022/08
  • バナジン酸塩ガラスおよびガラスセラミック (15Li2O･10Fe2O3･5P2O5･70V2O5)を用いた リチウムイオン電池正極活物質
    森元悠眞; 松迫駿介; 松尾紗絵子; 中原日向; 福地彩夏; 春田正和; 西田哲明; 岡伸人
    第59回化学関連支部合同九州大会  2022/07
  • 液中プラズマ法で合成したカーボンナノ粒子を用いた金属空気二次電池
    中原日向; 今村涼太; 松尾紗絵子; 森元悠眞; 福地彩夏; 湯浅雅賀; 西田哲明; 岡伸人
    第59回化学関連支部合同九州大会  2022/07
  • バナジン酸塩ガラス空気極触媒を用いた亜鉛-空気電池の開発
    松尾紗絵子; 櫻木貴久; 中原日向; 森元悠眞; 福地彩夏; 湯浅雅賀; 西田哲明; 岡伸人
    第59回化学関連支部合同九州大会  2022/07
  • PAMPSハイドロゲルによる有害金属イオン除去
    福地彩夏; 久保萌花; 松尾紗絵子; 中原日向; 森元悠眞; 西田哲明; 岡伸人
    第59回化学関連支部合同九州大会  2022/07
  • Mössbauer Spectroscopy and Glass Science (Review)
    Tetsuaki NISHIDA; Shiro KUBUKI; Nobuto OKA
    第21回 メスバウアー分光研究会 シンポジウム  2022/05
  • Development of Vanadate Glass containing Iron of Higher Oxidation States
    S. Matsuo; G. Nishimura; H. Nakahara; A. Fukuchi; Y. Morimoto; T. Nishida; N. Oka
    第21回 メスバウアー分光研究会 シンポジウム  2022/05
  • Development of Cathode Active Materials using CrIII-containing Vanadate Glass for Li-ion Battery
    Saeko Matsuo; Shunsuke Matsusako; Yuma Morimoto; Ayaka Fukuchi; Hyuga Nakahara; Masakazu Haruta; Tetsuaki Nishida; Nobuto Oka
    2022 Spring Meeting - European Materials Research Society (E-MRS)  2022/05
  • Development of Air-Electrode Catalyst using CoII,III-containing Vanadate Glass for Rechargeable Metal-Air Battery
    Saeko Matsuo; Takahisa Sakuragi; Hyuga Nakahara; Ayaka Fukuchi; Yuma Morimoto; Masayoshi Yuasa; Tetsuaki Nishida; Nobuto Oka
    2022 Spring Meeting - European Materials Research Society (E-MRS)  2022/05
  • 金属空気電池用のナノカーボン空気極触媒の開発
    今村涼太; 櫻木貴久; 松尾紗絵子; 松迫駿介; 湯浅雅賀; 西田哲明; 岡伸人
    第69回応用物理学会春季学術講演会  2022/03
  • 水溶液中の金属イオン除去のための高分子ゲルの開発
    福地彩夏; 久保萌花; 松尾紗絵子; 今村涼太; 松迫駿介; 櫻木貴久; 西田哲明; 岡伸人
    第69回応用物理学会春季学術講演会  2022/03
  • CoIII添加バナジン酸塩ガラスを用いた空気極触媒の開発
    松尾紗絵子; 櫻木貴久; 今村涼太; 松迫駿介; 湯浅雅賀; 西田哲明; 岡伸人
    第69回応用物理学会春季学術講演会  2022/03
  • Performance of Air-Electrode Catalysts containing Impurity-doped Carbon Materials
    R. Imamura; T. Sakuragi; S. Matsuo; H. Nakahara; S. Matsusako; M. Yuasa; T. Nishida; N. Oka
    Materials Research Meeting 2021 (MRM-2021)  2021/12
  • Local structure analysis of conductive barium iron vanadate glasses containing tin by means of RT-Mössbauer spectroscopy
    R. Imamura; Y. Fujita; S. Shiba; T. Sakuragi; S. Matsuo; S. Matsusako; S. Kubuki; T. Nishida; N. Oka
    Materials Research Meeting 2021 (MRM-2021)  2021/12
  • Structural analysis of vanadate glass and its application as a cathode active material for lithium-ion battery
    S. Matsusako; Y. Morimoto; S. Matsuo; R. Imamura; T. Sakuragi; H. Nakahara; M. Haruta; T. Nishida; N. Oka
    Materials Research Meeting 2021 (MRM-2021)  2021/12
  • Development of Ni-doped vanadate glass air-electrode catalysts and effect of pulverization
    T. Sakuragi; R. Sugimoto; S. Matsuo; R. Imamura; S. Matsusako; M. Yuasa; T. Nishida; N. Oka
    Materials Research Meeting 2021 (MRM-2021)  2021/12
  • Development of Eco-friendly Potassium Vanadate Glass containing Iron of Higher Oxidation States
    S. Matsuo; S. Matsusako; R. Imamura; T. Sakuragi; V. K. Sharma; T. Nishida; N. Oka
    Materials Research Meeting 2021 (MRM-2021)  2021/12
  • Elucidation of the mechanism of oxygen-reduction reaction in Co-doped air-electrode catalysts containing vanadate glass
    T. Sakuragi; S. Matsuo; R. Imamura; S. Matsusako; M. Yuasa; T. Nishida; N. Oka
    Materials Research Meeting 2021 (MRM-2021)  2021/12
  • Electrocatalytic Properties of Metal-Air Rechargeable Battery containing Mn- and Ni-doped Barium Iron Vanadate Glass as an Air-electrode Catalyst
    S. Matsuo; H. Miyamoto; R. Imamura; T. Sakuragi; S. Matsusako; T. Nishida; N. Oka
    Materials Research Meeting 2021 (MRM-2021)  2021/12
  • Amorphous WO3 Electrochromic Films with controlled high-rate deposition by Reactive-gas-flow sputter deposition
    N. Oka; M. Watanabe; J. Jia; Y. Shigesato
    Materials Research Meeting 2021 (MRM-2021)  2021/12
  • SiOx負極を用いた全固体電池の作製
    春田正和; 松田章正; 福山智也; 岡伸人; 土井貴之; 稲葉稔
    第82回応用物理学会秋季学術講演会  2021/09
  • Liイオン電池用バナジン酸塩ガラス正極活物質の構造、および充放電特性評価
    松迫駿介; 森元悠眞; 松尾紗絵子; 今村涼太; 櫻木貴久; 春田正和; 西田哲明; 岡伸人
    第82回応用物理学会秋季学術講演会  2021/09
  • 金属空気二次電池用に開発したバナジン酸塩ガラス空気極触媒におけるCoIII添加効果
    松尾紗絵子; 櫻木貴久; 今村涼太; 松迫駿介; 中原日向; 湯浅雅賀; 西田哲明; 岡伸人
    第82回応用物理学会秋季学術講演会  2021/09
  • 金属空気二次電池用のコバルト添加バナジン酸塩ガラス二元機能空気極触媒の開発
    松尾紗絵子; 櫻木貴久; 今村涼太; 松迫駿介; 中原日向; 湯浅雅賀; 西田哲明; 岡伸人
    2021年電気化学秋季大会  2021/09
  • Liイオン電池用バナジン酸塩ガラス正極活物質の充放電特性
    松迫駿介; 森元悠眞; 松尾紗絵子; 今村涼太; 櫻木貴久; 春田正和; 西田哲明; 岡伸人
    2021年電気化学秋季大会  2021/09
  • Development of New Vanadate Glass containing Iron of Higher Oxidation States
    S. Matsuo; S. Matsusako; R. Imamura; T. Sakuragi; V. Sharma; T. Nishida; N. Oka
    ACS Fall 2021  2021/08
  • Effect of CrIII doping on Vanadate glass cathode active materials for lithium-ion batteries
    S. Matsusako; Y. Morimoto; S. Matsuo; R. Imamura; T. Sakuragi; H. Nakahara; M. Haruta; T. Nishida; N. Oka
    ACS Fall 2021  2021/08
  • Glass transition behavior of oxide glass regulated by local and network structure
    T. Nishida; S. Kubuki; N. Oka
    ACS Fall 2021  2021/08
  • 次世代高容量電池として注目される金属空気電池の開発 ～コバルト添加バナジン酸塩ガラスを空気極触媒として
    櫻木貴久; 松尾紗絵子; 今村涼太; 松迫駿介; 中原日向; 湯浅雅賀; 西田哲明; 岡伸人
    福岡県環境教育学会第24回年会  2021/08
  • 清浄インテリア実現を目的とした殺菌光触媒塗料の開発
    松尾紗絵子; 下城直貴; 今村涼太; 櫻木貴久; 松迫駿介; 森岡陽介; 堀英祐; 西田哲明; 岡伸人
    福岡県環境教育学会第24回年会  2021/08
  • バナジン酸塩ガラスを用いたLiイオン電池正極活物質の充放電特性
    松迫駿介; 森本悠眞; 松尾紗絵子; 今村涼太; 櫻木貴久; 春田正和; 西田哲明; 岡伸人
    第56回化学関連支部合同九州大会  2021/07
  • バナジン酸塩ガラス空気極触媒の酸素還元反応メカニズムの解明
    櫻木貴久; 松尾紗絵子; 今村涼太; 松迫駿介; 中原日向; 湯浅雅賀; 西田哲明; 岡伸人
    第56回化学関連支部合同九州大会  2021/07
  • 高分子ゲルを用いたメッキ廃液の浄化
    松尾紗絵子; 古園詩織; 久保萌花; 今村涼太; 櫻木貴久; 松迫駿介; 西田哲明; 岡伸人
    第56回化学関連支部合同九州大会  2021/07
  • 清浄インテリア実現に向けた殺菌光触媒塗料の開発
    松尾紗絵子; 下城直貴; 今村涼太; 櫻木貴久; 松迫駿介; 森岡陽介; 堀英祐; 西田哲明; 岡伸人
    第56回化学関連支部合同九州大会  2021/07
  • 金属空気電池用の空気極触媒として開発したカーボン材料としての性能評価
    今村涼太; 櫻木貴久; 松尾紗絵子; 中原日向; 松迫駿介; 湯浅雅賀; 西田哲明; 岡伸人
    第56回化学関連支部合同九州大会  2021/07
  • 様々な金属酸化物を含有した導電性バナジン酸塩ガラスの開発、および二次電池への応用
    岡伸人; 松迫駿介; 櫻木貴久; 今村涼太; 杉本亮弥; 春田正和; 湯浅雅賀; 西田哲明
    第30回日本MRS年次大会  2020/12
  • 透明導電膜の熱伝導率
    岡伸人; 賈軍軍; 山田沙織; 重里 有三
    第30回日本MRS年次大会  2020/12
  • メスバウアー分光法によるSn添加導電性バナジン酸塩ガラスの局所構造解析
    今村涼太; 藤田裕樹; 柴祥矢; 松迫駿介; 櫻木貴久; 久冨木志郎; 西田哲明; 岡 伸人
    第30回日本MRS年次大会  2020/12
  • CrIII添加バナジン酸塩ガラスを用いたリチウムイオン電池正極活物質の充放電特性
    松迫駿介; 増田彩花; 杉本亮弥; 今村涼太; 櫻木貴久; 西田哲明; 春田正和; 岡伸人
    第30回日本MRS年次大会  2020/12
  • CoⅢ添加バナジン酸塩ガラスを空気極触媒として用いた金属―空気電池の開発
    櫻木貴久; 宮本孟; 今村涼太; 松迫駿介; 杉本亮弥; 湯浅雅賀; 西田哲明; 岡伸人
    第30回日本MRS年次大会  2020/12
  • 液中プラズマ法により合成したP添加カーボンナノ粒子による空気極
    今村涼太; 岡村智也; 櫻木貴久; 杉本亮弥; 松迫俊介; 湯浅雅賀; 西田哲明; 岡伸人
    第30回日本MRS年次大会  2020/12
  • 工業排水中の低濃度NiおよびZnの除去のための高分子ゲルの開発
    堀紗香; 古園詩織; 杉本亮弥; 今村涼太; 櫻木貴久; 松迫駿介; 西田哲明; 岡伸人
    第10回CSJ化学フェスタ2020  2020/12
  • リチウムイオン電池正極活物質として開発したクロム（Ⅲ）添加バナジン酸塩ガラスの構造解析
    松迫駿介; 増田彩花; 杉本亮弥; 今村涼太; 櫻木貴久; 西田哲明; 岡伸人
    第10回CSJ化学フェスタ2020  2020/12
  • リチウムイオン電池用のバナジン酸塩ガラス正極活物質の構造、および酸化クロム（III）添加効果
    松迫駿介; 増田彩花; 杉本亮弥; 櫻木貴久; 今村涼太; 西田哲明; 岡伸人
    第81回応用物理学会秋季学術講演会  2020/09
  • 3dブロック元素を添加したバナジン酸塩ガラスを用いた空気極触媒の開発
    櫻木貴久; 宮本孟; 杉本亮弥; 今村涼太; 松迫駿介; 湯浅雅賀; 西田哲明; 岡伸人
    第81回応用物理学会秋季学術講演会  2020/09
  • 溶融急冷法によるクロム（Ⅲ）添加バナジン酸塩ガラスの合成法、およびリチウムイオン電池正極活物質への応用
    松迫俊介; 増田彩花; 杉本亮弥; 櫻木隆久; 今村涼太; 西田哲明; 岡伸人
    化学工学会第51回秋季大会  2020/09
  • 溶融急冷法によるバナジン酸塩ガラス空気極触媒の開発、および3dブロック元素の添加効果
    櫻木貴久; 今村涼太; 松迫俊介; 宮本孟; 杉本亮弥; 賈軍軍; 湯浅雅賀; 西田哲明; 岡伸人
    化学工学会第51回秋季大会  2020/09
  • 液中プラズマ法により合成したカーボンナノ粒子による空気極触媒能、および不純物（B、N or P）添加
    今村涼太; 岡村智也; 杉本亮弥; 櫻木貴久; 松迫俊介; 賈軍軍; 湯浅雅賀; 西田哲明; 岡伸人
    化学工学会第51回秋季大会  2020/09
  • Liイオン電池正極活物質として開発したクロム添加バナジン酸塩ガラスのアニーリング効果  [Not invited]
    松迫駿介; 増田彩花; 杉本亮弥; 稲田帆波; 早川光; 西田哲明; 岡伸人
    第22回化学工学会学生発表会(岡山大会)  2020/03
  • Electrical and Optical Properties of Nb-doped TiO2 Films Deposited by Reactive Sputtering using Ni-Ti alloy target with impedance control systems
    N. Oka; Y. Sanno; J. Jia; Y. Shigesato
    Materials Research Meeting 2019 (MRM-2019)  2019/12
  • Local Structure and Electrical Conductivity of Highly Conductive Vanadate Glass containing Tin or Indium Oxides
    S. Masuda; Y. Fujita; N. Yamaguchi; S. Matsusako; R. Sugimoto; S. Shiba; S. Kubuki; T. Nishida; N. Oka
    Materials Research Meeting 2019 (MRM-2019)  2019/12
  • New Cathode Active Material using Vanadate Glass for High-capacity Li ion Battery
    S. Masuda; S. Matsusako; R. Sugimoto; H. Inada; H. Hayakawa; T. Nishida; N. Oka
    Materials Research Meeting 2019 (MRM-2019)  2019/12
  • Carbon-doped TiO2 Nanoparticles synthesized as the Visible-light Active Photocatalyst by Hydrothermal Method
    R. Sugimoto; R. Miyoshi; S. Masuda; T. Nishida; N. Oka
    Materials Research Meeting 2019 (MRM-2019)  2019/12
  • Bifunctional Air-Electrode Catalyst composed of Ni-containing Conductive Vanadate Glass developed for Metal-Air Battery
    R. Sugimoto; H. Miyamoto; T. Sakuragi; S. Masuda; M. Yuasa; T. Nishida; N. Oka
    Materials Research Meeting 2019 (MRM-2019)  2019/12
  • Nanocarbon Catalyst synthesized by the Solution Plasma Process for the Air-electrode of Metal-Air Battery
    R. Imamura; T. Okamura; S. Masuda; Y. Iyoku; R. Sugimoto; M. Yuasa; T. Nishida; N. Oka
    Materials Research Meeting 2019 (MRM-2019)  2019/12
  • Local Structure of Conductive Vanadate Glass and its Application to the Rechargeable Batteries  [Invited]
    N. Oka; H. Miyamoto; R. Sugimoto; S. Masuda; M. Yuasa; T. Nishida
    Materials Research Meeting 2019 (MRM-2019)  2019/12
  • Nanocarbon Catalyst synthesized by the Solution Plasma Process for the Air-electrode of Metal-Air Battery  [Not invited]
    R. Sugimoto; R. Imamura; T. Okamura; S. Masuda; Y. Iyoku; M. Yuasa; T. Nishida; N. Oka
    11th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-11)  2019/10
  • Development of Ni-containing Condactive Vanadate Glass Catalyst for the Metal-Air Rechargeble Battery  [Not invited]
    R. Sugimoto; H. Miyamoto; T. Sakuragi; S. Masuda; M. Yuasa; T. Nishida; N. Oka
    11th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-11)  2019/10
  • Mössbauer Study of Highly Conductive Vanadate Glass Containing Tin or Indium Oxides  [Not invited]
    S. Masuda; Y. Fujita; N. Yamaguchi; R. Sugimoto; S. Shiba; S. Kubuki; T. Nishida; N. Oka
    11th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-11)  2019/10
  • Conductive Vanadate Glass applied to New Cathode Active Material for High-capacity Li-ion Battery  [Not invited]
    S. Masuda; S. Matsusako; R. Sugimoto; H. Inada; H. Hayakawa; T. Nishida; N. Oka
    11th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-11)  2019/10
  • 高分子ゲルによる海水からの放射性セシウム回収技術の開発  [Not invited]
    杉本亮弥; 増田彩花; 櫻木貴久; 西田哲明; 岡 伸人
    近畿大学 院生サミット (大阪)  2019/09
  • 液中プラズマ法により作製したリン添加カーボンナノ粒子を用いた空気極触媒  [Not invited]
    今村涼太; 岡村智也; 伊與久唯; 増田彩花; 杉本亮弥; 湯浅雅賀; 西田哲明; 岡 伸人
    2019年 電気化学秋季大会 (山梨)  2019/09
  • 金属空気二次電池用のNi含有バナジン酸塩ガラス空気極触媒の開発  [Not invited]
    杉本亮弥; 宮本孟; 櫻木貴久; 増田彩花; 湯浅雅賀; 西田哲明; 岡 伸人
    2019年 電気化学秋季大会 (山梨)  2019/09
  • リチウムイオン電池用のクロム（III）添加バナジン酸塩ガラス正極活物質の開発  [Not invited]
    増田彩花; 松迫駿介; 杉本亮弥; 稲田帆波; 早川光; 西田哲明; 岡伸人
    2019年 電気化学秋季大会 (山梨)  2019/09
  • Visible-light active photocatalyst of carbon-doped TiO2 synthesized by hydrothermal method  [Not invited]
    N. Oka; R. Miyoshi; S. Masuda; R. Sugimoto; T. Nishida
    Diamond and Carbon Materials Conference 2019 (Sevilla, Spain)  2019/09
  • Air-electrode carbon catalys ts for the metal-air battery synthesized by the solution plasma process  [Not invited]
    N. Oka; T. Okamura; S. Masuda; Y. Iyoku; R. Sugimoto; M. Yuasa; T. Nishida
    Diamond and Carbon Materials Conference 2019 (Sevilla, Spain)  2019/09
  • 金属－空気電池用のカーボンナノ粒子触媒の新規開発  [Not invited]
    今村涼太; 岡村智也; 伊與久唯; 増田彩花; 杉本亮弥; 湯浅雅賀; 西田哲明; 岡伸人
    福岡県環境教育学会第22回年会 (福岡)  2019/08
  • 海水からの放射性セシウムの吸着・除去を目的とする高分子ゲルの開発  [Not invited]
    杉本亮弥; 増田彩花; 櫻木貴久; 西田哲明; 岡 伸人
    福岡県環境教育学会第22回年会 (福岡)  2019/08
  • ガラスを用いた次世代電池の開発 ～リチウムイオン電池の高容量化を目指した正極活物質の開発～  [Not invited]
    増田彩花; 松迫駿介; 杉本亮弥; 稲田穂波; 早川光; 西田哲明; 岡伸人
    福岡県環境教育学会第22回年会 (福岡)  2019/08
  • Ni添加バナジン酸塩ガラスを用いた空気極二元機能触媒の開発  [Not invited]
    櫻木貴久; 杉本亮弥; 宮本孟; 増田彩花; 湯浅雅賀; 西田哲明; 岡伸人
    第17回 近畿大学環境科学研究会 (福岡)  2019/08
  • 海水中の放射性セシウム回収を目的とする高分子ゲルの開発  [Not invited]
    杉本亮弥; 増田彩花; 西田哲明; 岡伸人
    第17回 近畿大学環境科学研究会 (福岡)  2019/08
  • Application of Machine Learning Techniques to Plastic Identification Based on Raman Spectroscopy  [Not invited]
    ウィレム ムス; 土田哲大; 河済博文; 岡伸人
    第17回 近畿大学環境科学研究会 (福岡)  2019/08
  • メスバウアー分光法による導電性バナジン酸塩ガラスの局所構造解析、および第5周期元素 (Sn，In) の添加効果  [Not invited]
    増田彩花; 藤田裕樹; 山口菜穂美; 杉本亮弥; 久冨木志郎; 西田哲明; 岡伸人
    第56回アイソトープ・放射線研究発表会 (東京)  2019/07
  • 放射性セシウムの回収を目的とする高分子ゲルの開発  [Not invited]
    増田彩花; 杉本亮弥; 西田哲明; 岡 伸人
    第56回アイソトープ・放射線研究発表会 (東京)  2019/07
  • リンを添加したカーボンナノ粒子を用いた空気極二元機能触媒の開発  [Not invited]
    今村涼太; 岡村智也; 伊與久 唯; 増田彩花; 杉本亮弥; 湯浅雅賀; 西田哲明; 岡 伸人
    第56回化学関連支部合同九州大会 (福岡)  2019/07
  • 導電性バナジン酸塩ガラス(Ni添加)を用いた空気極二元機能触媒の開発  [Not invited]
    杉本亮弥; 宮本 孟; 藤田裕樹; 増田彩花; 湯浅雅賀; 西田哲明; 岡 伸人
    第56回化学関連支部合同九州大会 (福岡)  2019/07
  • PAMPSおよびSPAハイドロゲルを用いたSr2+の吸着・回収技術  [Not invited]
    増田彩花; 白井綾華; 杉本亮弥; 西田哲明; 岡 伸人
    第56回化学関連支部合同九州大会 (福岡)  2019/07
  • クロム(III)を添加したバナジン酸塩ガラスを正極活物質とする高容量リチウムイオン電池の開発  [Not invited]
    増田彩花; 松迫駿介; 杉本亮弥; 稲田帆波; 早川光; 西田哲明; 岡 伸人
    第56回化学関連支部合同九州大会 (福岡)  2019/07
  • Cathode Properties of Na3FePO4CO3 Prepared By Mechanical Milling Method for Na-Ion Battery  [Not invited]
    B. W. Xie; S. Okada; A. Kitajou; Y. Fujita; N. Oka; T. Nishida; W. Kobayashi; T. Takahara
    235th ECS Meeting (Dallas, USA)  2019/05
  • Local Structure and Conduction Mechanism of Highly Conductive Vanadate Glass  [Not invited]
    西田哲明; 藤田裕樹; 増田彩花; 柴 祥矢; 久冨木志郎; 岡伸人
    第20回メスバウアー分光研究会シンポジウム (東京)  2019/03
  • Study on visible-light active photocatalytic WO3 films loaded with Ptnanoparticles  [Not invited]
    岡伸人; 村田亜紀代; 賈軍軍; 中村新一; 重里有三
    第28回日本MRS年次大会  2018/12
  • Adsorption and Recovery Technology for Various Metal Ions in Aqueous Solution using PAMPS Hydrogel  [Not invited]
    杉本亮弥; 増田彩花; 西田哲明; 岡伸人
    第28回日本MRS年次大会  2018/12
  • Air-Electrode Catalyst using Carbon Nanoparticles Synthesized by Solution Plasma Method  [Not invited]
    岡村智也; 増田彩花; 伊與久唯; 宮本 孟; 湯浅雅賀; 西田哲明; 岡 伸人
    第28回日本MRS年次大会  2018/12
  • Electrical Properties of Conductive Vanadate Glass and its Application to the Air-Electrode Catalyst for Rechargeable Metal-Air Battery  [Not invited]
    増田彩花; 藤田裕樹; 宮本 孟; 山口菜穂美; 伊豆味知佳; 杉本亮弥; 久冨木志郎; 西田哲明; 岡 伸人
    第28回日本MRS年次大会  2018/12
  • Development of Air-Electrode Catalyst using Vanadate Glass for Rechargeable Metal-Air Battery  [Not invited]
    岡 伸人; 宮本 孟; 藤田裕樹; 増田彩花; 坪倉睦美; 杉本亮弥; 湯浅雅賀; 西田哲明
    第28回日本MRS年次大会  2018/12
  • リチウムイオン電池用キノン有機分子正極活物質のNEXAFSによる特性評価  [Not invited]
    永村直佳; 北田祐太; 谷木良輔; 増田有沙; 小林弘明; 岡伸人; 本間格
    2018年日本表面真空学会学術講演会  2018/11
  • Local Structure and Electrocatalytic Properties of Conductive Vanadate Glass Applied to Metal-Air Rechargeable Battery  [Not invited]
    N. Oka; H. Miyamoto; Y. Fujita; S. Masuda; M. Yuasa; T. Nishida
    9th TOYOTA RIKEN International Workshop on New Developments and Prospects for the Future of Mössbauer Spectroscopy (IWMS2018)  2018/11
  • XANES analysis of quinones for organic energy devices  [Not invited]
    N. Nagamura; R. Taniki; Y. Kitada; A. Masuda; H. Kobayashi; N. Oka; I. Honma
    14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14)  2018/10
  • Development of Bifunctional Air-Electrode for Metal-Air Battery using Conductive Vanadate Glass  [Not invited]
    H. Miyamoto; M. Yuasa; T. Nishida; N. Oka
    E-MRS & MRS-J Bilateral Symposium  2018/10
  • Highly Conductive Vanadate Glass Containing Tin Oxide or Indium Oxides  [Not invited]
    Y. Fujita; S. Masuda; N. Yamaguchi; T. Izumi; S. Shiba; S. Kubuki; T. Nishida; N. Oka
    E-MRS & MRS-J Bilateral Symposium  2018/10
  • Removal of Various Metal Ions in Aqueous Solution using Poly(2-acrylamido-2-methyl-1-propanesulfonic acid) Hydrogel  [Not invited]
    S. Masuda; R. Sugimoto; T. Nishida; N. Oka
    E-MRS & MRS-J Bilateral Symposium  2018/10
  • PAMPSハイドロゲルによるセシウム吸着・回収技術  [Not invited]
    増田彩花; 杉本亮弥; 西田哲明; 岡 伸人
    第79回応用物理学会秋季学術講演会  2018/09
  • 液中プラズマ法により合成したカーボンナノ粒子・空気極二元機能触媒の開発  [Not invited]
    岡村智也; 増田彩花; 伊與久唯; 宮本 孟; 湯浅雅賀; 西田哲明; 岡 伸人
    第79回応用物理学会秋季学術講演会  2018/09
  • 金属酸化物を添加した高導電性バナジン酸塩ガラスの電気特性および金属-空気電池への応用  [Not invited]
    岡 伸人; 増田彩花; 藤田裕樹; 宮本 孟; 山口菜穂美; 伊豆味知佳; 杉本亮弥; 湯浅雅賀; 久富木志郎; 西田哲明
    第79回応用物理学会秋季学術講演会  2018/09
  • 不純物を添加した導電性バナジン酸塩ガラスの電気特性とその金属-空気電池二元機能触媒への応用  [Not invited]
    藤田裕樹; 山口菜穂美; 伊豆味知佳; 増田彩花; 宮本 孟; 柴 祥矢; 久冨木志郎; 西田哲明; 岡 伸人
    近畿大学 院生サミット  2018/09
  • 放射性セシウムの吸着･除去のために開発した高分子ゲル  [Not invited]
    増田彩花; 杉本亮弥; 藤田祐樹; 宮本孟; 西田哲明; 岡伸人
    近畿大学 院生サミット  2018/09
  • メカニカルミリング法で合成したNa3FePO4CO3の正極特性  [Not invited]
    謝宝 偉; 岡田重人; 喜多條鮎子; 藤田裕樹; 岡伸人; 西田哲明; 高橋健一; 岡田昌樹; 小林渉; 高原俊哉
    2018年電気化学秋季大会  2018/09
  • 新規高分子ゲルによる放射性セシウムの回収技術の開発 (優秀発表賞)  [Not invited]
    増田彩花; 杉本亮弥; 藤田祐樹; 宮本 孟; 西田哲明; 岡 伸人
    第16回 近畿大学環境科学研究会  2018/08
  • 放射性セシウムの吸着・回収を目的とする新規高分子ゲルの開発 (発表賞)  [Not invited]
    増田彩花; 杉本亮弥; 藤田祐樹; 宮本 孟; 西田哲明; 岡 伸人
    福岡県環境教育学会第21回年会  2018/08
  • M?ssbauer Study on the Substitution of Tin Oxide for Iron Oxide in Conductive Barium Iron Vanadate Glass  [Not invited]
    Y. Fujita; H. Miyamoto; T. Izumi; S. Masuda; S. Kubuki; T. Nishida; N. Oka
    CIMTEC 2018 - 14th International Ceramics Congress & 8th Forum on New Materials  2018/06
  • PAMPSハイドロゲルによる水溶液中のセシウムの吸着・除去  [Not invited]
    増田彩花; 杉本亮弥; 藤田裕樹; 宮本孟; 西田哲明; 岡伸人
    第55回化学関連支部合同九州大会  2018/06
  • 酸化スズを含む高導電性バナジン酸塩ガラスの局所構造と電気伝導度  [Not invited]
    藤田裕樹; 増田彩花; 宮本孟; 久冨木志郎; 西田哲明; 岡伸人
    第55回化学関連支部合同九州大会  2018/06
  • 導電性バナジン酸塩ガラスを用いた空気極二元機能触媒の開発  [Not invited]
    宮本孟; 藤田裕樹; 増田彩花; 湯浅雅賀; 西田哲明; 岡伸人
    第55回化学関連支部合同九州大会  2018/06
  • Thermal transport in transparent conductive oxide films  [Invited]
    N. Oka; Y. Shigesato
    CIMTEC 2018 - 14th International Ceramics Congress & 8th Forum on New Materials  2018/06
  • Local Structural Analysis of Conductive Vanadate Glass Containing Tin or Indium by Means of M?ssbauer Spectroscopy (Young Scientist Best Paper Award)  [Not invited]
    N. Yamaguchi; T. Izumi; Y. Fujita; S. Masuda; H. Miyamoto; S. Kubuki; T. Nishida; N. Oka
    4th Mediterranean Conference on the Applications of the M?ssbauerEffect (MECAME2018)  2018/05
  • Substitution Effect in Highly Conductive Barium Iron Vanadate Glass  [Not invited]
    T. Nishida; Y. Fujita; S. Kubuki; N. Oka
    4th Mediterranean Conference on the Applications of the M?ssbauer Effect (MECAME2018)  2018/05
  • Local Structure of Conductive Vanadate Glass Applied to the Oxygen Electrode for Rechargeable Metal-Air Battery  [Invited]
    N. Oka; H. Miyamoto; Y. Fujita; S. Masuda; M. Yuasa; T. Nishida
    4th Mediterranean Conference on the Applications of the Mössbauer Effect (MECAME2018)  2018/05
  • Substitutional Effect of Metal Oxides on Conductive Vanadate Glass and its Application to Metal-Air Rechargeable Battery  [Not invited]
    N. Oka; H. Miyamoto; Y. Fujita; S. Masuda; M. Yuasa; S. Kubuki; T. Nishida
    第19回メスバウアー分光研究会シンポジウム  2018/03
  • Vanadate Glass Applied to Metal-Air Battery as Air Electrode Catalyst  [Not invited]
    宮本孟; 藤田裕樹; 増田彩花; 湯浅雅賀; 西田哲明; 岡伸人
    第27回日本MRS年次大会  2017/12
  • Local Structural Analysis of Conductive Vanadate Glass by Means of RT-Mossbauer Spectroscopy and Substitutional Effect of Tin Oxide for Iron Oxide  [Not invited]
    藤田裕樹; 宮本孟; 伊豆見知佳; 増田彩花; 久富木志郎; 西田哲明; 岡伸人
    第27回日本MRS年次大会  2017/12
  • Review on Thermophysical Properties of Transparent Conductive Oxide Films  [Invited]
    N. Oka; Y. Shigesato
    第27回日本MRS年次大会  2017/12
  • Electrocatalytic Properties of Vanadate Glass for Metal-Air rechargeable Battery  [Not invited]
    H. Miyamoto; M. Yuasa; T. Nishida; N. Oka
    232nd ECS MEETING  2017/10
  • Local Structure of Highly Conductive Vanadate Glass containing Tin Oxide Studied by RT-M?ssbauer spectrum  [Not invited]
    Y. Fujita; T. Izumi; S. Kubuki; T. Nishida; N. Oka
    232nd ECS MEETING  2017/10
  • Visible-light active thin-film WO3 photocatalyst crystallized by post-annealing in air  [Not invited]
    N. Oka; J. Takashima; A. Murata; J. Jia; Y. Shigesato
    232nd ECS MEETING  2017/10
  • Electrochromic WO3 Films with controlled high-rate deposition by Hollow Cathode Gas Flow Sputtering  [Not invited]
    N. Oka; M. Watanabe; J. Jia; K. Sugie; Y. Iwabuchi; H. Kotsubo; Y. Shigesato
    232nd ECS MEETING  2017/10
  • 金属空気電池のためのバナジン酸塩ガラスによる新奇二元機能空気極触媒  [Not invited]
    宮本孟; 湯浅雅賀; 西田哲明; 岡伸人
    近畿大学 院生サミット  2017/09
  • V2O5を主成分とする電気を流す酸化物ガラス（バナジン酸塩ガラス）への酸化スズ添加の効果  [Not invited]
    藤田裕樹; 伊豆見知佳; 久富木志郎; 西田哲明; 岡伸人
    近畿大学 院生サミット  2017/09
  • 金属空気二次電池用バナジン酸塩ガラス空気極触媒の開発  [Not invited]
    宮本孟; 湯浅雅賀; 西田哲明; 岡伸人
    第78回応用物理学会秋季学術講演会  2017/09
  • 導電性バナジン酸塩ガラスの酸化スズ添加効果  [Not invited]
    藤田裕樹; 伊豆見知佳; 久富木志郎; 西田哲明; 岡伸人
    第78回応用物理学会秋季学術講演会  2017/09
  • Vanadate Glass applied to Bifunctional Oxygen Electrode for Metal-Air rechargeable Battery  [Not invited]
    H. Miyamoto; M. Yuasa; T. Nishida; N. Oka
    The 15th International Conference on Advanced Materials (IUMRS-ICAM2017)  2017/08
  • Substitutional Effect of Tin on Highly Conductive Barium Iron Vanadate Glass: Structure and Electrical Conductivity  [Not invited]
    Y. Fujita; T. Izumi; S. Kubuki; T. Nishida; N. Oka
    The 15th International Conference on Advanced Materials (IUMRS-ICAM2017)  2017/08
  • Reactive sputter deposition of Nb-doped TiO2 films using Ni-Ti alloy target with impedance control systems  [Not invited]
    N. Oka; Y. Sanno; J. Jia; Y. Shigesato
    The 15th International Conference on Advanced Materials (IUMRS-ICAM2017)  2017/08
  • Thermophysical Properties of Transparent Conductive Oxide Thin Films  [Invited]
    N. Oka; Y. Shigesato
    The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)  2017/08
  • Vanadate Glass applied to Oxygen Electrode in Metal-Air Rechargeable Battery  [Not invited]
    H. Miyamoto; M. Yuasa; T. Nishida; N. Oka
    10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-10)  2017/07
  • M?ssbauer Spectra of Highly Conductive Vanadate Glass Containing Tin Oxide  [Not invited]
    Y. Fujita; T. Izumi; S. Kubuki; T. Nishida; N. Oka
    10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-10)  2017/07
  • バナジン酸塩ガラスによる金属−空気電池用の二元機能酸素電極の開発  [Not invited]
    宮本孟; 湯浅雅賀; 西田哲明; 岡伸人
    第54回化学関連支部合同九州大会  2017/07
  • 酸化スズを導入した導電性バナジン酸塩ガラスの構造および電気特性  [Not invited]
    藤田裕樹; 伊豆見知佳; 久富木志郎; 西田哲明; 岡伸人
    第54回化学関連支部合同九州大会  2017/07
  • 産・官・民 (NPO) 協働による 「こころの相談カフェ」 ―自殺予防に対する身近な相談窓口の必要性―  [Not invited]
    田中康子; 田中美穂; 岡伸人
    第14回日本うつ病学会総会  2017/07
  • 高導電性モリブデンバナジン酸塩ガラスのメスバウアースペクトルと電気伝導度  [Not invited]
    西田哲明; 古本功; 久冨木志郎; 岡伸人
    第18回メスバウアー分光研究会シンポジウム  2017/03
  • 酸化スズを含む高導電性バナジン酸塩ガラスのメスバウアースペクトルと電気伝導度  [Not invited]
    藤田裕樹; 岡伸人; 久冨木志郎; 西田哲明
    第18回メスバウアー分光研究会シンポジウム  2017/03
  • Local Structure of Highly Conductive Barium Iron Vanadate Glass Containing Different Metal Oxides  [Not invited]
    Y. Fujita; Y. Izutsu; M. Fujimura; K. Osouda; S. Kubuki; N. Oka; T. Nishida
    Joint International Symposium on "Regional Revitalization and Innovation for Social Contribution" and "e-ASIA Functional Materials and Biomass Utilization 2016" (JISRI. e-ASIA 2016)  2016/12
  • 57Fe-M?ssbauer study of sodium vanadate glass with high electrical conductivity  [Not invited]
    S. Kubuki; S. Shiba; K. Osouda; K. Akiyama; E. Kuzmann; Z. Homonnay; N. Oka; T. Nishida
    XV Latin American Conference on the Applications of the M?ssbauer Effect (LACAME 2016)  2016/11
  • Thin-Film WO3 Photocatalyst with Visible Light Activity?(1) Deposition by the Conventional Reactive Sputtering  [Not invited]
    A. Murata; N. Oka; J. Jia; S. Nakamura; Y. Shigesato
    2016 MRS Fall Meeting & Exhibit  2016/11
  • Thin-Film WO3 Photocatalyst with Visible Light Activity; (2) Deposition by the Hollow Cathode Gas Flow Sputtering  [Not invited]
    N. Oka; A. Murata; Y. Iwabuchi; H. Kotsubo; J. Jia; S. Nakamura; Y. Shigesato
    2016 MRS Fall Meeting & Exhibit  2016/11
  • Highly conductive barium iron vanadate glass containing different metal oxides  [Invited]
    T. Nishida; Y. Izutsu; M. Fujimura; K. Osouda; Y. Otsuka; S. Kubuki; N. Oka
    The Solid State Chemistry Conference (SSC 2016)  2016/09
  • Analyses of new chalcogenization process using supercritical ethanol for low-cost fabrication of metal-chalcogenide materials  [Not invited]
    Y. Nakayasu; T. Tomai; N. Oka; I. Honma
    trimurti19765th International Solvothermal And Hydrothermal Association Conference 2016  2016/01
  • Heat Transfer in Transparent Conductive Oxide Films with a Sub-Micron Thickness  [Invited]
    N. Oka; Y. Shigesato
    The Symposium on Phase Change Oriented Science 2015 (PCOS2015)  2015/11
  • イオン液体含有疑似固体電解質を用いた高レート型全固体リチウム電池の開発  [Not invited]
    雁部祥行; 岡伸人; 本間格
    第56回電池討論会  2015/11
  • Rapid Mass Production of Graphene by Supercritical Fluid  [Invited]
    N. Oka; T. Tomai; I. Honma
    trimurti1976The 12th International Conference on Flow Dynamics (ICFD2015)  2015/10
  • 超臨界エタノールと固体カルコゲン原料を用いたアモルファス酸化物薄膜からCZTS薄膜への変換反応  [Not invited]
    中安祐太; 笘居高明; 岡伸人; 角谷正友; 本間格
    化学工学会 第47回秋季大会  2015/09
  • 超臨界流体セレン化・硫化法によるアモルファス酸化物薄膜からのCZTS薄膜の作製  [Not invited]
    中安祐太; 笘居高明; 岡伸人; 正直花奈子; 窪谷茂幸; 片山竜二; 角谷正友; 本間格
    第76回応用物理学会秋季学術講演会  2015/09
  • キノン系分子電極のレドックス反応に与えるイオン間相互作用の影響  [Not invited]
    川村祥太郎; 谷木良輔; 岡伸人; 笘居高明; 本間格
    2015年電気化学秋季大会  2015/09
  • Fabrication of Cu2ZnSn(S,Se)4 thin films via simultaneous supercritical fluid chalcogenization  [Not invited]
    Y. Nakayasu; T. Tomai; N. Oka; M. Sumiya; I. Honma
    International Conference on Frontiers in Materials Processing, Applications, Research & Technology (FiMPART'15)  2015/06
  • キノン系分子電極のレドックス反応に及ぼすカチオン種の影響  [Not invited]
    川村 祥太郎; 谷木 良輔; 岡 伸人; 本間 格
    電気化学会第82回大会  2015/03
  • High-rate reactive sputter deposition for Transparent Conductive Oxide Films  [Invited]
    Nobuto Oka
    The 1st E-MRS/MRS-J Bilateral Symposia  2014/12
  • 超臨界流体反応を用いて作製した太陽電池用Cu2ZnSn(S,Se)4薄膜の構造特性評価  [Not invited]
    中安祐太; 岡伸人; 笘居高明; 本間格
    化学工学会 第46回秋季大会  2014/09
  • Nobuto Oka
    10th International Conference on Glass and Plastics (ICCG10)  2014/06
  • Rapid synthesis of high-yielding graphene by supercritical fluid exfoliation  [Not invited]
    N. Oka; T. Tomai; I. Honma
    10th International Conference on Glass and Plastics(ICCG10)  2014/06
  • High-yielding synthesis of graphene by supuercritical fluid  [Not invited]
    岡伸人; 笘居高明; 本間格
    第46回フラーレン・ナノチューブ・グラフェン総合シンポジウム  2014/03
  • 超臨界流体を用いたグラフェンの直接剥離的作製プロセス  [Not invited]
    岡伸人; 笘居高明; 本間格
    化学工学会 第79年会  2014/03
  • 超臨界流体剥離法によるグラフェンの高速合成  [Not invited]
    岡伸人; 笘居高明; 本間格
    第61回応用物理学会春季学術講演会  2014/03
  • 超臨界流体セレン化・硫化プロセスにより作製したCu2ZnSn(S,Se)4薄膜の構造特性評価  [Not invited]
    中安祐太; 笘居高明; 岡伸人; 正直花奈子; 片山竜二; 小林大造; 中田時夫; 本間格
    第61回応用物理学会春季学術講演会  2014/03
  • 超臨界流体による高品質グラフェンの合成  [Invited]
    岡 伸人
    ナノテクノロジーを基盤とする次世代エネルギー材料・デバイスの物質科学 「若手研究者による次世代エネルギー材料プロセッシングの新展開」  2014/03
  • 超臨界流体による高品質グラフェンの合成  [Not invited]
    岡伸人; 笘居高明; 本間格
    日本化学会 第94回春季年会  2014/02
  • Thermal transport properties of ITO, IZO, AZO, ATO, TTO and NTO films  [Invited]
    N. Oka; J. Jia; T. Yagi; Y. Yamashita; N. Taketoshi; T. Baba; Y. Shigesato
    2013 JSAP-MRS Joint Symposia  2013/09
  • Carrier transport in polycrystalline Al doped ZnO films  [Not invited]
    J. Jia; M. Kusayanagi; N. Oka; S. Nakatomi; Y. Shigesato
    2013-JSAP-MRS Joint Symposia  2013/09
  • Thermophysical Properties of Various TCO Films: ITO, IZO, AZO, and NTO films  [Not invited]
    J. Jia; N. Oka; T. Yagi; Y. Yamashita; N. Taketoshi; T. Baba; Y. Shigesato
    10th Asian Termophysical Properties Conference (ATPC2013)  2013/09
  • Fabrication and characterization of Al doped ZnO films using reactive magnetron sputtering  [Not invited]
    J, Jia; M. Kusayanagi; N. Oka; Y. Shigesato
    12th International Symposium on Sputtering & Plasma processes (ISSP2013)  2013/07
  • Transparent Conductive Al or Ga doped ZnO films deposited by off-axis sputtering  [Not invited]
    J. Jia; A. Yoshimura; Y. Kagoya; N. Oka; Y. Shigesato
    8th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics(TOEO-8)  2013/05
  • Nb-doped TiO2 films deposited by reactive dc magnetron sputtering using Ni-Ti alloy target with impedence control systems  [Not invited]
    N. Oka; Y. Sanno; N. Tsukamoto; J. Jia; Y. Shigesato
    8th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics(TOEO-8)  2013/05
  • Atomic forced microscopy and transmission electron microscopy observations on the early stages of Sn-doped In2O3 film growth deposited on a-SiO2 Surface by dc magnetron sputtering  [Not invited]
    Y. Sato; N. Oka; S. Nakamura; Y. Shigesato
    8th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics(TOEO-8)  2013/05
  • In-situ analyses on the reactive sputtering process to deposit amorphous In2O3-ZnO films using an In-Zn alloy target  [Not invited]
    N. Tsukamoto; S. Sensui; J. Jia; N. Oka; Y. Shigesato
    8th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics(TOEO-8)  2013/05
  • Optical properties of polycrystalline or amorphous In2O3-based transparent conductive films  [Not invited]
    R. Sato; N. Oka; J. jia; F. Utsuno; A. Kaijo; Y. Shigesato
    4th International Symposium on Transparent Conductive Materials(TCM 2012)  2012/10
  • Al-doped ZnO films deposited by reactive sputtering using slightly reduced buffer layer  [Not invited]
    M. Kusayanagi; A. Uchida; N. Oka; J. Jia; Y. Shigesato
    4th International Symposium on Transparent Conductive Materials(TCM 2012)  2012/10
  • Nb-doped TiO2 films deposited by reactive dc magnetron sputtering using Ni-Ti alloy target with impedance control systems  [Not invited]
    N. Oka; Y. Sanno; N. Tsukamoto; J. Junjun; Y. Shigesato
    4th International Symposium on Transparent Conductive Materials(TCM 2012)  2012/10
  • Amorphous Indium-Tin-Zinc-Oxide (a-ITZO) films deposited by DC sputtering with O2, H2O, N2 introduction  [Not invited]
    Y. Torigoshi; T. Matoba; N. Oka; J. Jia; E. Kawashima; M. Nishimura; M. Kasami; K. Yano; Y. Shigesato
    4th International Symposium on Transparent Conductive Materials(TCM 2012)  2012/10
  • high quality Al or Ga doped ZnO films deposited by off-axis sputtering  [Not invited]
    A. Yoshimura; Y. Kagoya; N. Oka; J. Jia; Y. Shigesato
    4th International Symposium on Transparent Conductive Materials(TCM 2012)  2012/10
  • Thermophysical properties of amorphous indium-gallium-zinc-oxide thin films  [Not invited]
    T. Yoshikawa; N. Oka; J. Jia; T. Yagi; Y. Yamashita; N. Taketoshi; T. Baba; K. Hattori; Y. Seino; Y. Shigesato
    4th International Symposium on Transparent Conductive Materials(TCM 2012)  2012/10
  • In2O3系透明酸化物薄膜の熱拡散率とその温度依存性  [Not invited]
    吉川透; 岡伸人; 賈軍軍; 八木貴志; 山下雄一郎; 竹歳尚之; 馬場哲也; 服部浩一郎; 清野豊; 重里有三
    第33回日本熱物性シンポジウム  2012/10
  • 酸化物薄膜と金属薄膜の界面熱抵抗に関する研究  [Not invited]
    川?静香; 賈軍軍; 岡伸人; 山下雄一郎; 八木貴志; 竹歳尚之; 馬場哲也; 重里有三
    第33回日本熱物性シンポジウム  2012/10
  • 低比抵抗AlドープZnO(AZO)薄膜の成膜  [Not invited]
    草柳嶺秀; 内田あずさ; 岡伸人; 賈軍軍; 重里有三
    第73回応用物理学会学術講演会  2012/09
  • Off-axis スパッタ法による低比抵抗AZO, GZOの成膜  [Not invited]
    吉村彩; 籠谷幸広; 岡伸人; 賈軍軍; 重里有三
    第73回応用物理学会学術講演会  2012/09
  • O2, H2O, N2, またはN2O導入DCスパッタリング成膜アモルファスIn-Sn-Zn酸化物(a-ITZO)薄膜  [Not invited]
    鳥越祥文; 的場竜樹; 岡伸人; 賈軍軍; 川嶋絵美; 西村麻美; 笠見雅司; 矢野公規; 重里有三
    第73回応用物理学会学術講演会  2012/09
  • 分光エリプソメトリによる多結晶ITO, アモルファスIZO薄膜の解析  [Not invited]
    佐藤里奈; 岡伸人; 賈軍軍; 宇津野太; 海上暁; 重里有三
    第73回応用物理学会学術講演会  2012/09
  • アモルファスIZO薄膜の光学的バンドギャップの解析  [Not invited]
    賈軍軍; 高崎愛子; 岡伸人; 重里有三
    第73回応用物理学会学術講演会  2012/09
  • Fermi level shift of polycrystalline ITO and amorphous IZO thin films  [Not invited]
    J. Jia; A. Takasaki; N. Oka; Y. Shigesato
    20th Annual International Conference on Composites or Nano Engineering(ICCE)  2012/07
  • Electrochromic WO3 Films Deposited by Hollow Cathode Gas Flow Sputtering with Very High Deposition Rate  [Not invited]
    M. Watanabe; N. Oka; K. Sugie; Y. Iwabuchi; H. Kotsubo; Y. Shigesato
    9th International Conference on Coatings on Glass and Plastics(ICCG-9)  2012/06
  • Visible-light active photocatalytic Pt/WO3 films deposited by hollow cathode gas flow sputtering  [Not invited]
    A. Murata; N. Oka; K. Sugie; Y. Iwabuchi; H. Kotsubo; Y. Shigesato
    9th International Conference on Coatings on Glass and Plastics(ICCG-9)  2012/06
  • How work function depends on carrier density and optical band gap various TCO films  [Not invited]
    A. Takasaki; J. Jia; N. Oka; Y. Shigesato
    9th International Conference on Coatings on Glass and Plastics(ICCG-9)  2012/06
  • High performance electrochromic WO3 films deposited by hollow cathode gas flow sputtering  [Not invited]
    M. Watanabe; N. Oka; K. Sugie; Y. Iwabuchi; H. Kotsubo; Y. Shigesato
    9th International Conference on Coatings on Glass and Plastics(ICCG-9)  2012/06
  • Nb-doped TiO2 films deposited by reactive dc magnetron sputtering using Ni-Ti alloy target  [Not invited]
    N. Oka; Y. Sanno; N. Tsukamoto; Y. Shigesato
    9th International Conference on Coatings on Glass and Plastics(ICCG-9)  2012/06
  • Experimental Observation of Fermi Level Shift in Aluminum Doped ZnO Films  [Not invited]
    J. Jia; N. Oka; A. Takasaki; Y. Shigesato
    2012 MRS Spring Meeting  2012/04
  • Comparative Study on Electrical and Optical Properties between Polycrystalline ITO, AZO and Amorphous IZO Films  [Not invited]
    J. Jia; N. Oka; A. Takasaki; Y. Shigesato
    2012 MRS Spring Meeting  2012/04
  • Carrier Transport Properties of Sb- and Ta-doped SnO2 (ATO and TTO) Films  [Not invited]
    J. Jia; N. Oka; Y. Muto; Y. Shigesato
    2012 MRS Spring Meeting  2012/04
  • Nb-doped TiO2 Films with Low Resistivity Deposited by Reactive dc Magnetron Sputtering with Impedance Control Systems  [Not invited]
    N. Oka; Y. Sanno; N. Tsukamoto; J. Jia; Y. Shigesato
    2012 MRS Spring Meeting  2012/04
  • Sputter Deposition of WO3 Films as Visible Light-active Photocatalyst  [Not invited]
    N. Oka; M. Kikuchi; M. Imai; J. Jia; Y. Shigesato
    2012 MRS Spring Meeting  2012/04
  • 様々な透明導電膜の熱物性  [Not invited]
    岡伸人; 賈軍軍; 八木貴志; 山下雄一郎; 竹歳尚之; 馬場哲也; 重里有三
    第59回応用物理学会関係連合講演会  2012/03
  • Investigation on Band-gap Shrinkage Phenomenon for ZnO:Al Films  [Not invited]
    賈軍軍; 高崎愛子; 岡伸人; 重里有三
    第59回応用物理学会関係連合講演会  2012/03
  • ラマン分光法おうびカソードルミネッセンス法によるa-IGZO膜の構造評価  [Not invited]
    井上敬子; 松田景子; 吉川正信; 岡伸人; 重里有三
    第59回応用物理学会関係連合講演会  2012/03
  • 透明導電膜および透明アモルファス酸化物半導体の構造・物性と作製法  [Invited]
    岡 伸人
    株式会社情報機構主催 技術セミナー  2012/01
  • The Early Stages of ZnO, Al-doped ZnO, Ga-doped ZnO Films Deposited by dc magnetron sputtering  [Not invited]
    A. Uchida; N. Oka; Y. Shigesato
    The 21st MRS-Japan Academic Symposium  2011/12
  • Electrical Properties and Structure of Amorphous Zn-Sn-O Films  [Not invited]
    T. Matoba; N. Oka; Y. Shigesato
    The 21st MRS-Japan Academic Symposium  2011/12
  • Dependence of Film Thickness on Photocatalytic TiO2 films Depositied by Rf Reactive Sputtering  [Not invited]
    K. Kanemoto; N. Oka; Y. Shigesato
    The 21st MRS-Japan Academic Symposium  2011/12
  • Effects of Mesh on The Reactive Sputtering Process to Deposit TiNX and TiOX Films Using Ti Target  [Not invited]
    M. Ozawa; N. Tsukamoto; N. Oka; Y. Shigesato
    The 21st MRS-Japan Academic Symposium  2011/12
  • Study on Polycrystalline WO3 Films as Visible Light-active Photocatalyst  [Not invited]
    J. Takashima; A. Murata; N. Oka; Y. Shigesato
    The 21st MRS-Japan Academic Symposium  2011/12
  • Al2O3/W多層膜における界面熱抵抗  [Not invited]
    川崎静香; 岡伸人; 山下雄一郎; 八木貴志; 竹歳尚之; 馬場哲也; 重里有三
    第32回日本熱物性シンポジウム  2011/11
  • TiO2およびNbドープTiO2薄膜の熱拡散率測定(2)  [Not invited]
    田崎ちひろ; 岡伸人; 山下雄一郎; 八木貴志; 竹歳尚之; 馬場哲也; 神山敏久; 重里有三
    第32回日本熱物性シンポジウム  2011/11
  • アモルファスIGZO薄膜の熱拡散率測定  [Not invited]
    吉川透; 岡伸人; 山下雄一郎; 八木貴志; 竹歳尚之; 馬場哲也; 服部浩一郎; 清野豊; 重里有三
    第32回日本熱物性シンポジウム  2011/11
  • 3ω法によるアモルファルIGZO膜の熱伝導率測定  [Not invited]
    遠藤亮; 平野孝行; 竹田正明; 大石学; 吉川透; 岡伸人; 重里有三
    第32回日本熱物性シンポジウム  2011/11
  • Effects of high energy particles bombarding on growing film surface during reactive sputtering deposition of TiNx films  [Not invited]
    M. Ozawa; N. Tsukamoto; N. Oka; Y. Shigesato
    BIT’s 1st Annual World Congress of Nano-S&T  2011/10
  • Thermal properties of nano-size interface between oxide and metallic films -Thermal boundary resistance between Al2O3 and W films  [Not invited]
    S. Kawasaki; N. Oka; Y. Yamashita; T. Yagi; N. Taketoshi; T. Baba; Y. Shigesato
    BIT’s 1st Annual World Congress of Nano-S&T  2011/10
  • Formation of nano-crystallites in amorphous Zn-Sn-O films as transparent oxide semiconductors  [Not invited]
    T. Matoba; N. Oka; S. Nakamura; A. Hasegawa; T. Hattori; M. Ishida; Y. Shigesato
    BIT’s 1st Annual World Congress of Nano-S&T  2011/10
  • Study on Shifted Fermi Level of indium-free Transparent Conductive Oxide  [Not invited]
    J. Jia; A. Takasaki; N. Oka; Y. Shigesato
    BIT’s 1st Annual World Congress of Nano-S&T  2011/10
  • Reactive Gas Flow-Sputter deposition of amorphous WO3 Films for electrochromic devices  [Not invited]
    N. Oka; M. Watanabe; K. Sugie; Y. Iwabuchi; H. Kotsubo; Y. Shigesato
    E-MRS 2011 Fall Meeting  2011/09
  • Thermophysical Properties of Pure and Nb-doped TiO2 Films  [Not invited]
    C. Tasaki; N. Oka; T. Yagi; Y. Yamashita; N. Taketoshi; T. Baba; Y. Shigesato
    E-MRS 2011 Fall Meeting  2011/09
  • Study on Work Function of Al-doped ZnO Films Surface  [Not invited]
    N. Oka; A. Takasaki; Y. Shigesato
    E-MRS 2011 Fall Meeting  2011/09
  • Zn-Sn-O Films as Transparent Oxide Semiconductors Deposited by Sputtering  [Not invited]
    T. Matoba; N. Oka; S. Nakamura; A. Hasegawa; T. Hattori; M. Ishida; Y. Shigesato
    E-MRS 2011 Fall Meeting  2011/09
  • Sb-or Ta-doped SnO2 (ATO or TTO) Films Deposited by Reactive Magnetron Sputtering  [Not invited]
    S. Nakatomi; Nobuto Oka; Y. Iwabuchi; H. Kotsubo; N. Oka; Y. Shigesato
    E-MRS 2011 Fall Meeting  2011/09
  • Thermal Diffusivities of Amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) Films  [Not invited]
    T. Yoshikawa; N. Oka; T. Yagi; Y. Yamashita; N. Taketoshi; T. Baba; Y. Shigesato
    E-MRS 2011 Fall Meeting  2011/09
  • Electrical Properties of New In-free Transparent Conductive Oxide Films; Nb-doped TiO2  [Not invited]
    C. Tasaki; N. Oka; T. Kamiyama; Y. Shigesato
    E-MRS 2011 Fall Meeting  2011/09
  • Heat diffusion mechanisms in transparent conductive oxide films  [Invited]
    N. Oka; Y. Shigesato
    E-MRS (European Material Research Society) 2011 fall meeting  2011/09
  • 酸化チタン光触媒薄膜の内部応力と光分解活性  [Invited]
    重里有三; 岡伸人
    日本セラミックス協会 第24回秋季シンポジウム  2011/09
  • High Rate Deposition of Ta-doped SnO2(TTO) by Reactive Sputtering with Plasma Emission Intesity or Impedance Feedback systems  [Not invited]
    Y. Muto; S. Nakatomi; N. Oka; Y. Iwabuchi; H. Kotsubo; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • Zn-Sn-O films as transparent amorphous oxide semiconductors  [Not invited]
    T. Matoba; N. Oka; S. Nakamura; a. Hasegawa; T. Hattori; M. Ishida; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • Visible-light Active Photocatalytic WO3 Films Deposited by Reactive Gas-Flow Sputtering  [Not invited]
    A. Murata; N. Oka; Y. Iwabuchi; H. Kotsubo; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • In-situ analyses on sputtered fragments in the reactive sputtering process to deposit amorphous IZO films using IZ target  [Not invited]
    S. Sensui; M. Ozawa; N.Tsukamoto; N. Oka; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • Carrier density dependence of work function for Al-doped ZnO(AZO) films  [Not invited]
    A. Takasaki; N. Oka; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • Study on the initial film growth of ZnO transparent conductive films  [Not invited]
    A. Uchida; N. Oka; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • Photocatalytic activity of WO3 films crystallized by post-annealing in air  [Not invited]
    J. Takashima; A. murata; N. Oka; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • ependence of Total gas pressure on Thermal and Mechanical properties and Internal Structures in Indium Zinc Oxide Thin Films  [Not invited]
    M. Takeda; R. Endo; Y. Tkai; M. Oishi; N. Oka; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • Photocatalytic TiO2 film depositied by rf reactive aputtering  [Not invited]
    K. Kanemoto; A. Murata; N. Tsukamoto; N. Oka; M. Fukuchi; T. Fukushima; H. Kaji; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • In-situ analyses on the reactive sputtering processes to deposit AZO films using an Al-Zn alloy target  [Not invited]
    N. Tsukamoto; S. Sensui; M. Ozawa; N. Oka; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • High Rate Deposition of Electrochromic WO3 Films by Hollow Cathode Gas Flow Sputtering  [Not invited]
    M. Watanabe; N. Oka; Y. Iwabuchi; H. Kotsubo; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • In-situ analyses on the reactive sputtering process to deposit TiNx films  [Not invited]
    M. Ozawa; S. Sensui; N. Tsukamoto; N. Oka; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • Thermal diffusivity measurement of TiO2 and Nb-doped TiO2 thin films  [Not invited]
    C. Tasaki; N. Oka; T. Yagi; N. Taketoshi; T. Baba; T. Kamiyama; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • Thermal boundary resistance between aluminum oxide and tungsten films  [Not invited]
    S. Kawasaki; N. Oka; Y. Yamashita; T. Yagi; N. Taketoshi; T. Baba; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • Electrochromic Properties of Mg-doped NiOx Thin Films Sputtered with H2O Introduction  [Not invited]
    S.V. Green; M. Watanabe; N. Oka; G.G. Granqvist; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • Characterization of a-IGZO Films by Raman Spectroscopy  [Not invited]
    K. Inoue; K. Matsuda; M. Yoshikawa; N. Oka; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • Thermophysical properties of amorphous IGZO films deposited by dc magnetron sputtering  [Not invited]
    T. Yoshikawa; N. Oka; T. Yagi; Y. Yamashita; N. Taketoshi; T. Baba; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • Thermophysical properties of Alq3 and α-NPD films  [Not invited]
    K. Kato; T. Yagi; N. Taketoshi; T. Baba; N. Oka; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • Transparent conductive Nb-doped TiO2 films deposited by reactive dc magnetron sputtering with impedance control systems  [Not invited]
    Y. Sanno; N. Tsukamoto; N. Oka; Y. Shigesato
    7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-7)  2011/03
  • 透明導電膜の組成と電気特性の関係  [Not invited]
    織田志保; 竹田正明; 遠藤亮; 岡伸人; 重里有三
    春季第58回応用物理学関連連合講演会  2011/03
  • ラマン分光法およびカソードルミネッセンス(CL)法によるa-IGZO膜評価  [Not invited]
    井上敬子; 松田景子; 古川正信; 岡伸人; 重里有三
    春季第58回応用物理学関連連合講演会  2011/03
  • CT個体NMR法による光触媒表面へのアセトアルデヒドの吸着状態解析  [Not invited]
    村田亜紀代; 塚本直樹; 岡伸人; 福地将志; 福島達也; 梶弘典; 重里有三
    春季第58回応用物理学関連連合講演会  2011/03
  • 反応性dcスパッタ法により作成したWO3薄膜の可視光応答性(VII)〜後焼成による光触媒活性〜  [Not invited]
    島準也; 村田亜紀代; 岡伸人; 重里有三
    第17回シンポジウム光触媒反応の最近の展開（光機能材料研究会）  2010/12
  • 反応性rfマグネトロンスパッタ法で作製した光触媒TiO2薄膜(2)〜全圧依存性および薄膜依存性〜  [Not invited]
    金本宗也; 村田亜紀代; 岡伸人; 重里有三
    第17回シンポジウム光触媒反応の最近の展開（光機能材料研究会）  2010/12
  • TiO2およびNbドープTiO2薄膜の熱拡散率測定  [Not invited]
    田崎ちひろ; 岡伸人; 八木貴志; 竹歳尚之; 馬場哲也; 神山敏久; 重里有三
    第31回日本熱物性シンポジウム  2010/11
  • サーモリフレクタンス法を用いたAlq3およびα-NPD薄膜の熱物性に関する研究(2)  [Not invited]
    加藤一樹; 伊藤宜弘; 八木貴志; 竹歳尚之; 馬場哲也; 岡伸人; 重里有三
    第31回日本熱物性シンポジウム  2010/11
  • Visible-light Active photocatalytic WO3 films loaded with Pt nanoparticles deposited by sputtering  [Not invited]
    A. Murata; N. Oka; Y. Shigesato
    5th International Conference on Surfaces, Coatings and Nanostructured Materials (NANOSMAT-5)  2010/10
  • High rate deposition of Sb-doped SnO2 films by reactive sputtering using impedance control method  [Not invited]
    Y. Muto; Y. Nishi; N. Tsukamoto; N. Oka; Y. Iwabuchi; H. Kotsubo; Y. Shigesato
    TCM 2010 3rd International Symposium on Transparent Conductive Materials (former TCO)  2010/10
  • In-situ analysis of positive and negative energetic ions generated during Sn-doped In2O3 deposition by reactive sputtering  [Not invited]
    N. Tsukamoto; T. Tazawa; N. Oka; M. Saito; Y. Shigesato
    TCM 2010 3rd International Symposium on Transparent Conductive Materials (former TCO)  2010/10
  • Thermal diffusivity of ITO, IZO, AZO, TTO and NTO films analyzed by thermoreflectance method  [Invited]
    Y. Shigesato; N. Oka; T. Yagi; N. Taketoshi; T. Baba
    TCM 2010 - 3rd International Symposium on Transparent Conductive Materials (former TCO)  2010/10
  • 反応性スパッタ法で作製したTiO2薄膜の光触媒活性(?)：膜厚依存性  [Not invited]
    金本宗也; 村田亜紀代; 岡伸人; 重里有三
    秋季第71回応用物理学会学術講演会  2010/09
  • 可視光応答型WO3光触媒薄膜の後焼成による活性化  [Not invited]
    高島準也; 村田亜紀代; 岡伸人; 重里有三
    秋季第71回応用物理学会学術講演会  2010/09
  • Tiターゲットを用いた反応性スパッタ成膜プロセスのin-situ解析(?) TiO2成膜  [Not invited]
    岡伸人; 伊藤宜弘; 宮武正平; 重里有三
    秋季第71回応用物理学会学術講演会  2010/09
  • Tiターゲットを用いた反応性スパッタ成膜プロセスのin-situ解析(?) TiNx成膜  [Not invited]
    小澤正和; 塚本直樹; 岡伸人; 重里有三
    秋季第71回応用物理学会学術講演会  2010/09
  • ITOおよびIZO薄膜のキャリア密度と仕事関数の相関性  [Not invited]
    高崎愛子; 岡伸人; 宇都野太; 矢野公規; 重里有三
    秋季第71回応用物理学会学術講演会  2010/09
  • XPS分析によるIZO幕の電子状態に関する考察  [Not invited]
    安居麻美; 小川慎吾; 山元隆志; 竹田正明; 遠藤亮; 岡伸人; 重里有三
    秋季第71回応用物理学会学術講演会  2010/09
  • 反応性スパッタ法によるSnO2系透明導電膜の高速成膜  [Not invited]
    武藤優; 中臣聡; 塚本直樹; 岡伸人; 岩淵芳典; 小坪秀史; 重里有三
    秋季第71回応用物理学会学術講演会  2010/09
  • パルス光加熱サーモリフレクタンス法によるTiO2およびNbドープTiO2薄膜の熱物性測定  [Not invited]
    田崎ちひろ; 岡伸人; 八木貴志; 竹歳尚之; 馬場哲也; 重里有三
    秋季第71回応用物理学会学術講演会  2010/09
  • スパッタリング法による透明導電膜の作製並びに有機ELに使われる透明導電膜及び有機薄膜の熱物性  [Invited]
    岡 伸人
    (社)日本ファインセラミックス協会主催 JFCAイブニングセミナー  2010/08
  • Thermophysical properties of transparent conductive oxide films with a sub-micron thickness  [Invited]
    N. Oka
    Workshop on Transparent Conductive Oxide Thin Films for Electronics and Optics in Green Energy  2010/08
  • High Rate Deposition of Various TCO Films by Reactive Sputtering  [Invited]
    N. Oka; Y. Shigesato
    Workshop on Transparent Conductive Oxide Thin Films for Electronics and Optics in Green Energy  2010/08
  • Transparent Conductive Oxide Films by Reactive Sputtering Using Alloy Targets  [Invited]
    Nobuto Oka
    FEP-seminar (Fraunhofer-Institut f?r Elektronenstrahl- und Plasmatechnik (FEP), Germany)  2010/06
  • Thermophysical properties of various TCO films; ITO, IZO, AZO and TTO films  [Invited]
    Y. Shigesato; N. Oka; T. Yagi; N. Taketoshi; T. Baba
    CIMTEC 2010, 5th Forum on New Materials  2010/06
  • High Rate Deposition of High Quality Transparent Conductive Oxide Films by Reactive Magnetron Sputtering Using Alloy Targets  [Invited]
    N. Oka; Y. Shigesato
    8th International Conference on Glass and Plastics (ICCG8)  2010/06
  • 様々な透明導電膜の熱物性解析  [Invited]
    岡 伸人
    セントラル硝子? 硝子研究所  2010/02
  • 透明導電膜の熱物性研究と薄膜データベースの開発  [Invited]
    岡 伸人
    平成21年度 固体熱物性クラブ全体会合およびデータベース・薄膜熱物性ＷＧ会合  2010/01
  • 反応性dcスパッタ法により作製したWO3薄膜の可視光応答性(?)〜後焼成による光触媒活性〜  [Not invited]
    高島準也; 村田亜紀代; 岡伸人; 佐藤泰史; 重里有三
    第16回シンポジウム光触媒反応の最近の展開（光機能材料研究会）  2009/12
  • Pt島状膜担持による可視光応答型WO3光触媒薄膜の高性能化(?)  [Not invited]
    村田亜紀代; 岡伸人; 佐藤泰史; 中村新一; 山口博; 重里有三
    第16回シンポジウム光触媒反応の最近の展開（光機能材料研究会）  2009/12
  • 反応性RFマグネトロンスパッタ法で作製した光触媒TiO2薄膜〜膜厚依存性および照射光強度依存性〜  [Not invited]
    金本宗也; 村田亜紀代; 岡伸人; 佐藤泰史; 重里有三
    第16回シンポジウム光触媒反応の最近の展開（光機能材料研究会）  2009/12
  • Thermophysical Properties of Alq3 and α-NPD Films Measured by Nanosecond Thermoreflectance Technique  [Not invited]
    N. Oka; K. Kato; N. Ito; T. Yagi; N. Taketoshi; T. Baba; Y. Sato; Y. Shigesato
    AVS 56th International Symposium & Exhibition  2009/11
  • Study on MoO3-x Films Deposited by Reactive Sputtering for Organic Light-Emitting Diodes  [Not invited]
    N. Oka; H. Watanabe; Y. Sato; N. Ito; H. Tsuji; Y. Shigesato
    AVS 56th International Symposium & Exhibition  2009/11
  • High Rate Deposition of SnO2-based Transparent Conductive Films by Reactive Sputtering with Impedance Control Method  [Not invited]
    Y. Muto; Y. Nishi; K. Hirohata; N. Tsukamoto; N. Oka; Y. Sato; Y. Iwabuchi; H. Kotsubo; Y. Shigesato
    AVS 56th International Symposium & Exhibition  2009/11
  • Photoelectron Emission Properties and Work Function of Sn-doped In2O3 Films  [Not invited]
    A. Takasaki; Y. Sato; N. Oka; F. Utsuno; K. Yano; Y. Shigesato
    AVS 56th International Symposium & Exhibition  2009/11
  • Enhancement of Visible-Light Activities of Photocatalytic WO3 Films Deposited by Sputtering  [Not invited]
    A. Murata; M. Kikuchi; N. Oka; Y. Sato; S. Nakamura; H. Yamaguchi; Y. Shigesato
    AVS 56th International Symposium & Exhibition  2009/11
  • Reactive Magnetron Sputter Deposition of Al-doped ZnO Films with Unipolar Pulsing and Impedance Control System  [Not invited]
    Y. Nishi; K. Hirohata; N. Tsukamoto; Y. Sato; N. Oka; Y. Shigesato
    AVS 56th International Symposium & Exhibition  2009/11
  • Ultra High Rate Depositions of Various Transparent Conductive Oxide Films of AZO, ITO and ATO by Reactive Magnetron Sputtering  [Not invited]
    Y. Nishi; K. Hirohata; Y. Muto; Y. Kawase; N. Tsukamoto; N. Oka; Y. Sato; Y. Iwabuchi; H. Kotsubo; Y. Shigesato
    AVS 56th International Symposium & Exhibition  2009/11
  • In-situ Analyses on Negative Ions in the Sputtering Process to Deposit Al doped ZnO Films  [Not invited]
    N. Tsukamoto; D. Watanabe; N. Ito; N. Oka; Y. Sato; Y. Shigesato
    AVS 56th International Symposium & Exhibition  2009/11
  • Study on Spatial Distribution of Electrical Properties for Al-doped ZnO Films Deposited by DC Magnetron Sputtering using Various Inert Gases  [Not invited]
    Y. Sato; K. Ishihara; N. Oka; Y. Shigesato
    AVS 56th International Symposium & Exhibition  2009/11
  • Electrical and Optical Properties of Nb-doped TiO2 Films Deposited by dc Magnetron Sputtering using a Slightly Reduced Nb-doped TiO2-x Ceramic Targets  [Not invited]
    Y. Sato; Y. Sanno; C. Tasaki; N. Oka; T. Kamiyama; Y. Shigesato
    AVS 56th International Symposium & Exhibition  2009/11
  • 反応性スパッタ法によるMoO3-x薄膜の作製ならびにα-NPD薄膜との界面における結合状態解析  [Not invited]
    渡邊寛己; 岡 伸人; 佐藤泰史; 伊藤宜弘; 辻 博也; 重里有三
    有機ＥＬ討論会第9回例会  2009/11
  • 薄膜熱物性データベースの開発(1) (材料構造の階層性に対応したデータベース構造)  [Not invited]
    山下雄一郎; 馬場哲也; 竹歳尚之; 八木貴志; 岡伸人; 重里有三
    第30 回日本熱物性シンポジウム  2009/10
  • 3ω法によるIZO透明導電膜の熱伝導率測定  [Not invited]
    遠藤亮; 平野孝行; 竹田正明; 大石学; 岡伸人; 重里有三
    第30 回日本熱物性シンポジウム  2009/10
  • SbドープSnO2およびTaドープSnO2薄膜の熱拡散率測定  [Not invited]
    山田沙織; 八木貴志; 竹歳尚之; 馬場哲也; 岡伸人; 佐藤泰史; 重里有三
    第30 回日本熱物性シンポジウム  2009/10
  • サーモリフレクタンス法を用いたAlq3およびα-NPD 薄膜の熱物性に関する研究  [Not invited]
    加藤一樹; 伊藤宜弘; 八木貴志; 竹歳尚之; 馬場哲也; 岡伸人; 佐藤泰史; 重里有三
    第30 回日本熱物性シンポジウム  2009/10
  • DCマグネトロンスパッタ法により作製したAlドープZnO 薄膜の熱拡散率測定  [Not invited]
    木村健太郎; 八木貴志; 竹歳尚之; 馬場哲也; 岡伸人; 佐藤泰史; 重里有三
    第30 回日本熱物性シンポジウム  2009/10
  • ユニポーラパルス反応性d c スパッタ法によるAlドープZnO (AZO) の高速成膜  [Not invited]
    西康孝; 岡伸人; 廣畑謙人; 塚本直樹; 佐藤泰史; 重里有三
    VACUUM2009 第31回真空展  2009/09
  • Boundary thermal resistance between aluminum oxide and molybdenum films  [Not invited]
    N. Oka; R. Arisawa; T. Yagi; N. Taketoshi; T. Baba; Y. Sato; Y. Shigesato
    6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2009/04
  • Characterization of amorphous indium-gallium-zinc-oxide (a-IGZO) films deposited by dc magnetron sputtering with H2O introduction  [Not invited]
    T. Aoi; N. Oka; Y. Sato; R. Hayashi; H. Kumomi; Y. Shigesato
    6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2009/04
  • In-Situ Analyses on High Energy Negative Ions in the Sputtering Processes to deposit a-IZO films  [Not invited]
    S. Sensui; D. Watanabe; N. Oka; Y. Sato; N. Ito; N. Ide; Y. Shigesato
    6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2009/04
  • Visible-Light active photocatalytic WO3 films loaded with Pt nanoparticles  [Not invited]
    A. Murata; H. Watanabe; N. Oka; Y. Sato; H. Yamaguchi; S. Nakamura; Y. Shigesato
    trimurti19766th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2009/04
  • Al-doped ZnO (AZO) films deposited by reactive sputtering with unipolar pulsing and plasma emission control systems  [Not invited]
    K. Hirohata; Y. Nishi; N. Tsukamoto; N. Oka; Y. Sato; I. Yamamoto; Y. Shigesato
    6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2009/04
  • Thermal diffusivity measurement of Al-doped ZnO using a nanosecond thermoreflectance technique  [Not invited]
    K. Kimura; T. Yagi; N. Taketoshi; T. Baba; N. Oka; Y. Sato; Y. Shigesato
    6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2009/04
  • High Rate Deposition of Sb-doped SnO2 (ATO) by Reactive Sputtering with Impedance Control Method  [Not invited]
    Y. Muto; Y. Nishi; K. Hirohata; N. Tsukamoto; N. Oka; Y. Sato; Y. Iwabuchi; H. Kostubo; M. Yoshikawa; Y. Shigesato
    6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2009/04
  • Relationships between carrier density and photoelectron emission properties for ITO thin films  [Not invited]
    A. Takasaki; Y. Sato; N. Oka; F. Utsuno; K. Yano; Y. Shigesato
    6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2009/04
  • Thermal transport properties of Alq3 and α-NPD films  [Not invited]
    K. Kato; N. Ito; T. Yagi; N. Taketoshi; T. Baba; N. Oka; Y. Sato; Y. Shigesato
    6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2009/04
  • Molybdenum oxide films deposited by reactive sputtering for organic light emitting diode devices  [Not invited]
    H. Watanabe; N. Oka; Y. Sato; N. Ito; H. Tsuji; Y. Shigesato
    6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2009/04
  • High rate deposition of Al-doped ZnO (AZO) by reactive sputtering with unipolar pulsing and impedance control system  [Not invited]
    Y. Nishi; K. Hirohata; N. Tsukamoto; Y. Sato; N. Oka; I. Yamamoto; Y. Shigesato
    6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2009/04
  • Electrical and thermophysical properties of Ta doped SnO2 thin films deposited by rf magnetron sputtering  [Not invited]
    S. Yamada; K. Kimura; T. Okabe; T. Yagi; N. Taketoshi; T. Baba; N. Oka; Y. Sato; Y. Shigesato
    6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2009/04
  • Transparent conductive Nb-doped TiO2 films deposited by dc magnetron sputtering using a slightly reduced Nb-doped TiO2 ceramic target  [Not invited]
    Y. Sanno; Y. Sato; N. Oka; T. Kamiyama; Y. Shigesato
    6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2009/04
  • Microstructural and electrochromic properties of amorphous WO3 films deposited by dc magnetron sputtering  [Not invited]
    M. Watanabe; A. Goto; Y. Sato; N. Oka; I. Yamamoto; Y. Shigesato
    6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2009/04
  • Oxidation barrier performance of SiO2 and Al2O3 films deposited by reactive magnetron sputtering  [Not invited]
    A. Miida; Y. Sato; N. Oka; F. Utsuno; K. Yano; K. Hasegawa; H. Yamaguchi; S. Nakamura; Y. Shigesato
    6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2009/04
  • AlドープZnO薄膜の斜めスパッタ成膜  [Not invited]
    佐藤泰史; 柳澤 圭; 中村新一; 岡伸人; 重里有三
    春季第 56 回応用物理学関係連合講演会  2009/04
  • スパッタ法により作製したTaドープSnO2薄膜の電気特性と熱物性の解析  [Not invited]
    山田沙織; 木村健太郎; 岡部隆志; 八木貴志; 竹歳尚之; 馬場哲也; 岡伸人; 佐藤泰史; 重里有三
    春季第 56 回応用物理学関係連合講演会  2009/04
  • 反応性スパッタによるSbドープSnO2（ATO）の高速成膜  [Not invited]
    武藤優; 西康孝; 廣畑謙人; 岡伸人; 佐藤泰史; 岩淵芳典; 小坪秀史; 吉川雅人; 重里有三
    春季第 56 回応用物理学関係連合講演会  2009/04
  • ITO薄膜の光電子放出特性とキャリア密度の相関性  [Not invited]
    高崎愛子; 佐藤泰史; 岡伸人; 宇都野太; 矢野公規; 重里有三
    春季第 56 回応用物理学関係連合講演会  2009/04
  • アモルファス酸化インジウム亜鉛(a-IZO)薄膜のスパッタ成膜プロセス中の高エネルギー負イオンIn-Situ解析  [Not invited]
    泉水栄; 渡邉大輔; 岡伸人; 佐藤泰史; 伊藤宜弘; 井出伸弘; 重里有三
    春季第 56 回応用物理学関係連合講演会  2009/04
  • Nb-doped TiO2-xターゲットを用いたDCスパッタ法によるNbドープTiO2透明導電膜の作製  [Not invited]
    三野雄太; 佐藤泰史; 岡伸人; 神山敏久; 重里有三
    春季第 56 回応用物理学関係連合講演会  2009/04
  • 反応性スパッタ法によるAlドープZnO(AZO)の高速成膜  [Not invited]
    西康孝; 廣畑謙人; 岡伸人; 佐藤泰史; 山本功; 重里有三
    春季第 56 回応用物理学関係連合講演会  2009/04
  • Alq3およびα-NPD薄膜の熱物性に関する研究  [Not invited]
    加藤一樹; 伊藤宜弘; 八木貴志; 竹歳尚之; 馬場哲也; 岡伸人; 佐藤泰史; 重里有三
    春季第 56 回応用物理学関係連合講演会  2009/04
  • Pt島状膜担持による可視光応答型WO3光触媒薄膜の高性能化  [Not invited]
    村田亜紀代; 渡邊寛己; 岡伸人; 佐藤泰史; 山口博; 中村新一; 重里有三
    春季第 56 回応用物理学関係連合講演会  2009/04
  • Nb Doped TiO2 Films with Low Resistivity Deposited by dc Magnetron Sputtering using a TiO2-x Target for Transparent Conductive Electrodes  [Not invited]
    Y. Sato; Y. Sanno; N. Oka; T. Kamiyama; Y. Shigesato
    2008 MRS Fall Meeting  2008/12
  • Influence of High Energy Negative Ion Bombardments on Structure and Electrical Properties of Al Doped ZnO (AZO) Films Deposited by dc Magnetron Sputtering  [Not invited]
    D. Watanabe; N. Ito; N. Oka; Y. Sato; Y. Shigesato
    2008 MRS Fall Meeting  2008/12
  • In-situ Analyses on Magnetron Sputtering Processes to Deposit ITO and IZO Films  [Not invited]
    N. Ito; N. Oka; Y. Sato; Y. Shigesato
    2008 MRS Fall Meeting  2008/12
  • Characterization of MoO3-x Films Deposited by Reactive Sputtering  [Not invited]
    H. Watanabe; N. Oka; Y. Sato; N. Ito; H. Tsuji; Y. Shigesato
    2008 MRS Fall Meeting  2008/12
  • Properties of IGZO Films Deposited by Dc Magnetron Sputtering with H2O Introduction  [Not invited]
    T. Aoi; D. Watanabe; N. Oka; Y. Sato; R. Hayashi; H. Kumomi; Y. Shigesato
    2008 MRS Fall Meeting  2008/12
  • High Rate Deposition of Al-doped ZnO (AZO) by Reactive Sputtering (1); Unipolar Pulsing with Plasma Emission Control  [Not invited]
    K. Hirohata; Y. Nishi; N. Oka; Y. Sato; I. Yamamoto; Y. Shigesato
    2008 MRS Fall Meeting  2008/12
  • High Rate Deposition of Al-doped ZnO (AZO) by Reactive Sputtering (2); Unipolar Pulsing with Impedance Control  [Not invited]
    Y. Nishi; K. Hirohata; N. Oka; Y. Sato; I. Yamamoto; Y. Shigesato
    2008 MRS Fall Meeting  2008/12
  • High Rate Deposition of Al-doped ZnO (AZO) by Reactive Sputtering (3); Hollow Cathode Gas Flow Sputtering  [Not invited]
    H. Takeda; Y. Iwabuchi; M. Yoshikawa; N. Oka; Y. Sato; Y. Shigesato
    2008 MRS Fall Meeting  2008/12
  • Thermophysical and Electrical Properties of Polycrystalline ITO and Amorphous In2O3-ZnO Films  [Not invited]
    T. Ashida; N. Oka; Y. Sato; T. Yagi; N. Taketoshi; T. Baba; Y. Shigesato
    2008 MRS Fall Meeting  2008/12
  • Al, Si を添加したTiNx系超硬質薄膜における耐酸化性と硬さに関する研究  [Not invited]
    高橋浩輔; 清野豊; 服部浩一郎; 岡伸人; 佐藤泰史; 重里有三
    日本電子材料技術協会 第４５回秋期講演大会  2008/11
  • 脱In 透明導電膜：Al doped ZnO 薄膜の熱物性に関する研究  [Not invited]
    木村健太郎; 八木貴志; 竹歳尚之; 馬場哲也; 岡伸人; 佐藤泰史; 重里有三
    日本電子材料技術協会 第４５回秋期講演大会  2008/11
  • AlN薄膜の熱物性における酸素濃度依存性  [Not invited]
    岡部隆志; 八木貴志; 竹歳尚之; 馬場哲也; 岡伸人; 佐藤泰史; 重里有三
    日本電子材料技術協会 第４５回秋期講演大会  2008/11
  • ナノ秒サーモリフレクタンス法によるAlq3薄膜の熱物性解析  [Not invited]
    加藤一樹; 伊藤宜弘; 竹歳尚之; 馬場哲也; 岡伸人; 佐藤泰史; 重里有三
    有機ＥＬ討論会第7回例会  2008/11
  • Sn doped In2O3(ITO）薄膜の光学的バンドギャップならびに光電子放出特性とキャリア密度の相関に関する研究  [Not invited]
    高崎愛子; 佐藤泰史; 岡伸人; 宇都野太; 矢野公規; 重里有三
    有機ＥＬ討論会第7回例会  2008/11
  • 反応性スパッタ法によるMoOx薄膜の構造と物性評価およびMoOx/α-NPD界面の解析  [Not invited]
    渡邊寛己; 岡伸人; 佐藤泰史; 伊藤宜弘; 辻博也; 重里有三
    有機ＥＬ討論会第7回例会  2008/11
  • Material Ontology: an Infrastructure for exchanging material information and knowledge  [Not invited]
    T. Ashino; N. Oka
    21st International CODATA Conference  2008/10
  • サーモリフレクタンス法によるAZO薄膜の熱拡散率測定  [Not invited]
    木村健太郎; 八木貴志; 竹歳尚之; 馬場哲也; 岡伸人; 佐藤泰史; 重里有三
    第29回日本熱物性シンポジウム  2008/10
  • AlN, AlOxNy薄膜の熱物性に関する研究  [Not invited]
    岡部隆志; 八木貴志; 竹歳尚之; 馬場哲也; 岡伸人; 佐藤泰史; 重里有三
    第29回日本熱物性シンポジウム  2008/10
  • 反応性スパッタ法による MoOx 薄膜の構造、物性解析  [Not invited]
    渡邊寛己; 岡伸人; 佐藤泰史; 重里有三
    第69回応用物理学会学術講演会  2008/09
  • 反応性スパッタ法による高熱伝導AlN薄膜の作製  [Not invited]
    岡部隆志; 八木貴志; 竹歳尚之; 馬場哲也; 岡伸人; 佐藤泰史; 重里有三
    第69回応用物理学会学術講演会  2008/09
  • Analysis of Thermophysical Properties for Insulator Oxide Films Using a Thermoreflectance Method  [Not invited]
    R. Arisawa; T. Yagi; N. Taketoshi; T. Baba; N. Oka; Y. Sato; Y. Shigesato
    1st International Symposium on Thermal Design and Thermophysical Property for Electronics  2008/06
  • Information Platform for Data Exchange between Heterogeneous Material Data Resources  [Not invited]
    T. Ashino; N. Oka
    Ensuring the Long-Term Preservation and Value Adding to Scientific and Technical Data 2007  2007/10
  • Development of Information Platform for Data Exchange between Heterogeneous Material Data Resources  [Not invited]
    T. Ashino; N. Oka
    Materials Science and Technology 2007  2007/09
  • 材料データベース共通プラットフォームの開発  [Not invited]
    芦野俊宏; 門馬義雄; 馬場哲也; 山崎政義; 岡伸人
    6th Japan Conference on Structural Safety and Reliability  2007/06
  • 材料データベースの連携プラットフォームの構築/ Development of Common Platform for Material Databases  [Not invited]
    芦野俊宏; 岩田修一; 岡伸人; 馬場哲也; 山崎政義; 徐一斌; 門馬義雄
    第17回日本MRS学術シンポジウム  2006/12
  • Cyber connection for cross-border collaboration  [Not invited]
    N. Oka; S. Iwata
    20th CODATA International Conference  2006/10
  • Informatics for ab-initio Computational data in Materials Science  [Not invited]
    N. Oka; K. Rajan
    20th CODATA International Conference  2006/10
  • Material Database Syndication with RSS  [Not invited]
    T. Ashino; N. Oka
    20th CODATA International Conference  2006/10
  • Crossing the International Digital Divide  [Not invited]
    N. Oka; K. Boysen; S. Iwata; K. Rajan
    CoSMIC-IMI NSF (National Science Foundation) Site Visit  2006/05
  • Virtual on-line lecture about the access to LPF database  [Not invited]
    N. Oka; Y. Chen; S. Iwata
    CoSMIC-IMI NSF (National Science Foundation) Site Visit  2006/05
  • CoSMIC-IMI Data Infrastructure  [Not invited]
    M. Heying; N. Oka; W. Hoshida; S. Iwata; S. Broderick; C. Suh; S. Outrey; C. S. Kong; M. Stukowski; K. Rajan
    CoSMIC-IMI NSF (National Science Foundation) Site Visit  2006/05
  • 異分野横観的アプローチによる先見的予防保全  [Not invited]
    中井康裕; 岡伸人; 金田保則; 岩田修一; 陳迎
    第1回横幹連合コンファレンス  2005/11
  • 分野横断的問題解決のための知識抽出方法  [Not invited]
    仲根信; 岡伸人; 金田保則; 陳迎; 岩田修一
    第1回横幹連合コンファレンス  2005/11
  • In-situ 意思決定のための次世代型簡易GIS  [Not invited]
    近藤啓示; 岡伸人; 金田保則; 陳迎; 岩田修一
    第1回横幹連合コンファレンス  2005/11
  • 合意形成のための情報知識共有システム  [Not invited]
    岡 伸人
    情報知識学会主催の第10回 情報知識学フォーラム ｢情報の生成と合成｣  2005/10
  • Next Generation Lean GIS for In-situ Decision Making 新一代的在决策支援易地理信息系???  [Not invited]
    K. Kondoh; N. Oka; Y. Kaneta; Y. Chen; S. Iwata
    UT forum 2005  2005/09
  • 複雑事象のモデリング手法について  [Invited]
    岡 伸人
    山形大学教育学部セミナー  2005/01
  • SCM理論への物流シミュレーションの組み込み  [Not invited]
    矢部真史; 岡伸人; 岩田修一
    エコデザイン2004ジャパンシンポジウム  2004/12
  • Fusion of Data Capture, Self-Organization and Landscape Creation  [Not invited]
    N. Oka; M. Yabe; A. Sugawara; S. Iwata
    19th International CODATA Conference  2004/11
  • An Approach for Data - Driven Decision Making  [Not invited]
    M. Yabe; N. Oka; Y. Nakai; S. Iwata
    19th International CODATA Conference  2004/11
  • 分散可動型浄化システムのシミュレーション  [Not invited]
    岡伸人; 金田保則; 三好哲生; 岩田修一
    日本シミュレーション学会大会  2004/06
  • 合意形成のための環境情報の論理表現に関する研究  [Not invited]
    岡伸人; 柏村信輔; 杉浦裕美; 矢部真史; 三好哲生; 岩田修一
    第12回東京大学原子力研究総合センターシンポジウム  2003/12
  • 物質データベースを用いた物性値に関する規則性探索  [Not invited]
    茂木厚史; 川口福太郎; 岡伸人; 金田保則; 陳 迎; 岩田修一
    日本機械学会材料力学部門講演会  2003/09
  • 環境配慮型社会実現のための技術統合  [Not invited]
    岡伸人; 田中俊一郎; 岩田修一
    エコデザイン2002ジャパンシンポジウム  2002/12
  • 環境調和型戦略に対応する組立性, 分解性設計  [Not invited]
    山際康之; 岩田修一; 岡伸人; 杉浦裕美; 沼田潤
    エコデザイン2002ジャパンシンポジウム  2002/12
  • 低環境負荷社会実現を目的とした消費者動向研究 -A Study on Consumer Trends to Realize Environmental Conscious Society-  [Not invited]
    岡伸人; 横山美和; 岩田修一
    第12回設計工学・システム部門講演会  2002/11
  • Converging Technologies for Realizing Environmental Conscious Landscape  [Not invited]
    N. Oka; H. Sugiura; Y. Yamagiwa; S. Iwata
    Landscape Frontier International Symposium 2002  2002/10
  • 消費者動向研究(フリーマーケットでのケース・スタディ)  [Not invited]
    岡伸人; 横山美和; 岩田修一
    日本感性工学会大会  2002/09
  • 情報デザインにおけるインタラクションの試み  [Not invited]
    横山美和; 岡伸人; 馬場靖憲
    日本感性工学会大会  2002/09
  • 人工物工学研究の展開(第9報) −グリーンデザインのための材料情報の活用− Advances in Research into Artifacts (9th Report) -Utilization of Materials Information for Green Design-  [Not invited]
    岡伸人; 与那嶺真一; 金田保則; 田中俊一郎; 岩田修一
    第10回設計工学・システム部門講演会  2001/01
  • 実用Mg合金の水溶液腐食(?)  [Not invited]
    岡伸人; 岩田修一; 田中俊一郎
    日本金属学会2000年秋期大会  2000/09
  • 実用Mg合金の水溶液腐食  [Not invited]
    岡伸人; 岩田修一; 田中俊一郎
    日本金属学会2000年春季大会  2000/03
  • Mg合金の応力負荷状態での腐食挙動  [Not invited]
    田中俊一郎; 岩田修一; 岡伸人
    日本金属学会2000年春季大会  2000/03
  • Topological Relations of Landscape Experts in WWW  [Not invited]
    A. Moteki; Y. Terashima; H. Sugiura; N. Oka; S. Iwata
    Landscape Frontier International Symposium 2002

MISC

Industrial Property Rights

  • 特許第7137826号:空気極用触媒およびその製造方法  
    岡伸人, 西田哲明, 湯浅雅賀, 宮本孟
  • 特開2020-038831:空気電池の酸素電極触媒およびその製造方法  2020/03/12
    岡伸人, 西田哲明, 湯浅雅賀, 伊與久唯, 岡村智也, 今村涼太
  • 特開2020-6366:汚染物質回収剤および回収方法  2020/01/16
    岡伸人, 西田哲明, 増田彩花, 白井彩華, 杉本亮弥

Awards & Honors

  • 2023/12 TCM-TOEO 2023 (Symposium S-2, MRM2023) Poster Gold Award
     Study of Crystallization Mechanism of Amorphous WO3 Films Deposited by RF Sputtering 
    受賞者: Ayaka Fukuchi;Junjun Jia;Risa Nakamura;Eisuke Magome;Tetsuaki Nishida;Nobuto Oka
  • 2023/12 TCM-TOEO 2023 (Symposium S-2, MRM2023) Poster Encouragement Award
     Study of the Crystallization Mechanism of Amorphous Ga2O3 Films Deposited by RF Sputtering 
    受賞者: Risa Nakamura;Junjun Jia;Ayaka Fukuchi;Eisuke Magome;Tetsuaki Nishida;Nobuto Oka
  • 2023/08 福岡県環境教育学会第26回年会 特別賞
     高酸化状態の鉄を含むバナジン酸塩ガラスによる環境浄化、および環境教育 
    受賞者: 中村理紗;福地彩夏;西山沙希;西田哲明;岡 伸人
  • 2023/07 第60回化学関連支部合同九州大会 優秀研究発表賞【電気化学分野】
     空気極触媒用Co添加バナジン酸塩ガラスの組成最適化 
    受賞者: 中原日向;櫻木貴久;湯浅雅賀;西田哲明;岡伸人
  • 2022/08 福岡県環境教育学会第 25 回年会 優秀発表賞 (口頭発表)
     重金属廃液を浄化するためのゼリー状材料の開発および環境教育 
    受賞者: 福地 彩夏;久保 萌花;松尾 紗絵子;中原 日向;森元 悠眞;西田 哲明;岡 伸人
  • 2022/08 福岡県環境教育学会第 25 回年会 優秀発表賞 (ポスター発表)
     酸化バナジウムを主成分とするガラスによるLiイオン電池用正極活用物質の開発 
    受賞者: 森元 悠眞;松迫 駿介;松尾 紗絵子;福地 彩夏;中原 日向;春田 正和;西田 哲明;岡 伸人
  • 2020/05 Japan Radioisotope Association RADIOISOTOPES Research Promotion Award for Young Scientists
     Adsorption and Removal Technology for Cs+ in Aqueous Solution Using Poly-2-acrylamido-2-methyl-1-propanesolfonic acid (PAMPS) Hydrogel 
    受賞者: Sayaka Masuda;Ryoya Sugimoto;Tetsuaki Nishida;Nobuto Oka
  • 2019/10 The 11th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-11) Best Poster Award (Gold)
     Conductive Vanadate Glass Applied to New Cathode Active Material for High-Capacity Li-ion Battery 
    受賞者: ○S. Masuda;S. Matsusako;R. Sugimoto;H. Inada;H. Hayakawa;T. Nishida;N. Oka
  • 2019/08 近畿大学環境科学研究会 優秀研究発表賞
     Ni添加バナジン酸塩ガラスを用いた空気極二元機能触媒の開発 
    受賞者: 櫻木貴久;杉本亮弥;宮本 孟;増田彩花;湯浅雅賀;西田哲明;岡 伸人
  • 2019/07 第56回化学関連支部合同九州大会 優秀研究発表賞
     クロム(Ⅲ)を添加したバナジン酸塩ガラスを正極活物質とする高容量リチウムイオン電池の開発 
    受賞者: 増田彩花;松迫駿介;杉本亮弥;稲田帆波;早川光;西田哲明;岡 伸人
  • 2018/12 The 28th Annual Meeting of MRS-J Award for Encouragement of Research
     Electrical properties of conductive vanadate glass and its application to the air-electrode catalyst for rechargeable metal-air battery 
    受賞者: ○S. Masuda;H. Miyamoto;Y. Fujita;N. Yamaguchi;T. Izumi;R. Sugimoto;S. Kubuki;T. Nishida;N. Oka
  • 2018/08 福岡県環境教育学会 優秀発表賞
     放射性セシウムの吸着・回収を目的とする新規高分子ゲルの開発 
    受賞者: 増田彩花;杉本亮弥;藤田祐樹;宮本 孟;西田哲明;岡 伸人
  • 2018/08 第16回 近畿大学環境科学研究会 優秀発表賞
     新規高分子ゲルによる放射性セシウムの回収技術の開発 
    受賞者: 増田彩花;杉本亮弥;藤田祐樹;宮本 孟;西田哲明;岡 伸人
  • 2018/05 4th Mediterranean Conference on the Applications of the MössbauerEffect (MECAME2018) Young Scientist Best Paper Award
     Local Structural Analysis of Conductive Vanadate Glass Containing Tin or Indium by Means of Mössbauer Spectroscopy 
    受賞者: ○N. Yamaguchi;T. Izumi;Y. Fujita;S. Masuda;H. Miyamoto;S. Kubuki;T. Nishida;N. Oka
  • 2017/08 The 15th International Conference on Advanced Materials (IUMRS-ICAM2017) Award for encouragement of research
     Vanadate Glass applied to Bifunctional Oxygen Electrode for Metal-Air rechargeable Battery 
    受賞者: ○H. Miyamoto;M. Yuasa;T. Nishida;N. Oka
  • 2017/07 The 10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-10) Best Poster Award (silver)
     Vanadate Glass applied to Oxygen Electrode in Metal-Air Rechargeable Battery 
    受賞者: ○H. Miyamoto;M. Yuasa;T. Nishida;N. Oka
  • 2016/01 5th International Solvothermal And Hydrothermal Association Conference 2016 Best Poster Award
     Analyses of new chalcogenization process using supercritical ethanol for low-cost fabrication of metal-chalcogenide materials 
    受賞者: ○Y. Nakayasu;T. Tomai;N. Oka;I. Honma
  • 2015/09 化学工学会 第47回秋季大会 超臨界流体部会 学生賞
     超臨界エタノールと固体カルコゲン原料を用いたアモルファス酸化物薄膜から のCZTS薄膜への変換反応 
    受賞者: 中安祐太;笘居高明;岡伸人;角谷正友;本間格
  • 2015/04 Materials Research Society (MRS) The 1st annual JMR Paper of the Year Award
     Thermophysical properties of SnO2-based transparent conductive films: Effect of dopant species and structure compared with In2O3-, ZnO-, and TiO2-based films USA official_journal 
    受賞者: N. Oka;S. Yamada;T. Yagi;N. Taketoshi;J. Jia;Y. Shigesato
  • 2015/03 化学工学会反応工学部会CVD反応分科会 平成２６年度 学生奨励賞
     超臨界流体反応を用いて作製した太陽電池用Cu2ZnSn(S,Se)4薄膜の構造特性評価(化学工学会 第46回秋季大会：平成26年9月発表) 
    受賞者: 中安祐太;岡伸人;笘居高明;本間格
  • 2012/10 Japan Society of Thermophysical Properties Young Researcher Award of the JSTP
     Thermal transport properties of various transparent conductive oxide films 
    受賞者: Nobuto Oka
  • 2012/10 第32回 日本熱物性シンポジウム ベストプレゼンテーション賞
     酸化物薄膜と金属薄膜の界面熱抵抗に関する研究 
    受賞者: 川崎静香;岡伸人;賈軍軍;山下雄一郎;八木貴志;竹歳尚之;馬場哲也;重里有三
  • 2012/06 ICCG9 - 9th International Conference on Coatings on Glass and Plastics Best Poster Award (3rd Prize)
     High performance electrochromic WO3 films deposited by hollow cathode gas flow sputtering 
    受賞者: ○M. Watanabe;N. Oka;K. Sugie;Y. Iwabuchi;H. Kotsubo;Y. Shigesato
  • 2011/11 第32回 日本熱物性シンポジウム ベストプレゼンテーション賞_2
     アモルファス IGZO 薄膜の熱拡散率測定 
    受賞者: 吉川透;岡伸人;八木貴志;山下雄一郎;竹歳尚之;馬場哲也;服部浩一郎;清野豊;重里有三
  • 2011/11 第32回 日本熱物性シンポジウム ベストプレゼンテーション賞
     TiO2およびNbドープTiO2薄膜の熱拡散率測定 (2) japan_society 
    受賞者: 田崎ちひろ;岡伸人;八木貴志;山下雄一郎;竹歳尚之;馬場哲也;神山敏久;重里有三
  • 2011/03 7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-7) Poster Award (Silver)_2
     High Rate Deposition of Ta-doped SnO2 (TTO) by Reactive Sputtering with Plasma Emission Intensity or Impedance Feedback systems 
    受賞者: 〇Y. Muto;S. Nakatomi;N. Oka;Y. Iwabuchi;H. Kotsubo;Y. Shigesato
  • 2011/03 7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-7) Poster Award (Silver)
     Thermophysical properties of amorphous IGZO films deposited by dc magnetron sputtering 
    受賞者: ○T. Yoshikawa;N. Oka;T. Yagi;Y. Yamashita;N. Taketoshi;T. Baba;Y. Shigesato
  • 2010/11 第31回日本熱物性シンポジウム ベストプレゼンテーション賞 (連名・共同)
     TiO2およびNbドープTiO2薄膜の熱拡散率測定 
    受賞者: 田崎ちひろ;岡伸人;八木貴志;竹歳尚之;馬場哲也;神山敏久;重里有三
  • 2009/04 6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics ( TOEO6 ) Poster Award
     Visible-Light active photocatalytic WO3 films loaded with Pt nanoparticles 
    受賞者: ○A. Murata;H. Watanabe;N. Oka;Y. Sato;H. Yamaguchi;S. Nakamura;Y. Shigesato
  • 2008/12 6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-6) Poster Award_2
     Transparent conductive Nb-doped TiO2 films deposited by dc magnetron sputtering using a slightly reduced Nb-doped TiO2 ceramic target 
    受賞者: 〇Y. Sanno;Y. Sato;N. Oka;T. Kamiyama;Y. Shigesato
  • 2008/12 2008 Materials Research Society (MRS) Fall Meeting, U.S.A. Poster Award
     Properties of IGZO Films Deposited by Dc Magnetron Sputtering with H2O Introduction 
    受賞者: ○T. Aoi;N. Oka;Y. Sato;R. Hayashi;H. Kumomi;Y. Shigesato
  • 2008/11 日本電子材料技術協会 第45回秋季講演大会 優秀賞 (連名・共同)
     AlN 薄膜の熱物性における酸素濃度依存性 
    受賞者: 岡部隆志;八木貴志;竹歳尚之;馬場哲也;岡伸人;佐藤泰史;重里有三
  • 2008/11 第29回日本熱物性シンポジウム ベストプレゼンテーション賞 (連名・共同)
     AlN，AlOxNy薄膜の熱物性に関する研究 
    受賞者: 岡部隆志;八木貴志;竹歳尚之;馬場哲也;岡伸人;佐藤泰史;重里有三

Research Grants & Projects

  • Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C)
    Date (from‐to) : 2021/04 -2024/03 
    Author : 岡 伸人
  • 電気を流すガラス (バナジン酸塩ガラス) 微粒子の開発、および金属空気電池電極材料への応用
    公益財団法人吉田学術教育振興会：平成２９年度学術奨励金
    Date (from‐to) : 2018/03 -2023/02
  • 近畿大学：令和3年度「"オール近大"新型コロナウイルス感染症対策支援プロジェクト」
    Date (from‐to) : 2021/07 -2022/03 
    Author : 岡 伸人
  • 導電性バナジン酸塩ガラスによる金属－空気電池用空気極材料の開発、および熱処理による構造緩和と空気極特性の最適化
    公益財団法人日本板硝子材料工学助成会：平成31年度（第41回） 研究助成事業
    Date (from‐to) : 2019/04 -2022/03
  • オンライン授業と面接授業のハイブリッド型教育方式によるデジタル社会資本としての教育システムの提案
    近畿大学：令和2年度「"オール近大"新型コロナウイルス感染症対策支援プロジェクト」
    Date (from‐to) : 2020/07 -2021/03 
    Author : 日高健; 岡伸人; 白土浩; 小池博; 古賀幸了; 長谷川直樹
  • 近畿大学：令和2年度「"オール近大"新型コロナウイルス感染症対策支援プロジェクト」
    Date (from‐to) : 2020/07 -2021/03 
    Author : 岡伸人; 堀英祐; 森岡陽介
  • 次世代産業のための革新的バッテリー材料の開発
    近畿大学：21世紀研究開発奨励金 【共同研究助成金】
    Date (from‐to) : 2019/04 -2021/03 
    Author : 岡伸人; 松本幸三; 湯浅雅賀; 牟田浩司; 西川博昭; 春田正和
  • 金属／絶縁体、金属／（金属―絶縁体相転移材）ナノ積層膜界面における熱輸送機構
    Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B)
    Date (from‐to) : 2013/04 -2014/03 
    Author : 岡 伸人
  • 有機発光機構を用いた高効率照明技術の開発
    独立行政法人 新エネルギー・産業技術総合開発機構 (NEDO)：
    Date (from‐to) : 2008/03 -2010/04 
    Author : パナソニック電工株式会社
  • 次世代高効率・高品質照明の基盤技術開発
    独立行政法人 新エネルギー・産業技術総合開発機構 (NEDO)：
    Date (from‐to) : 2010/04
  • 高度な機能を有する無機薄膜材料の研究 (透明導電膜・光触媒・エレクトロクロミックなど)
    Date (from‐to) : 2008/04
  • 酸化物薄膜・窒化物薄膜・有機物薄膜の熱物性研究
    Date (from‐to) : 2008/04
  • 材料データベースの連携プラットフォームの構築に関する調査研究
    独立行政法人 新エネルギー・産業技術総合開発機構 (NEDO)：
    Date (from‐to) : 2006/10 -2008/03 
    Author : 芦野 俊宏

Committee Membership

  • 2024/06 - Today   The Materials Research Society of Japan (MRS-J)   Director
  • 2022/09 - Today   International Symposium on the Industrial Applications of the Mössbauer Effect (ISIAME 2024)   Organizing Chair
  • 2022/08 -2024/01   Materials Research Meeting 2023 (MRM2023) Symposium S-2 (9th International Symposium on Transparent Conductive Materials & 13th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TCM-TOEO 2023))   Corresponding organizer
  • 2019/12 -2021/12   Materials Research Meeting 2021 (MRM2021) Symposium D-2 Chair

Others

  • 2017/04 -2017/04  超吸水性樹脂を用いた、水中のCsイオン回収技術の開発 
    近畿大学学内研究助成金 研究種別：奨励研究助成金 課題番号：SR09

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