詳細

牟田　浩司 （ムタ　ヒロシ）

  • 産業理工学部 電気電子工学科　教授
Last Updated :2024/04/23

コミュニケーション情報 byコメンテータガイド

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    地球環境にやさしい電磁エネルギー利用をテーマに、高周波プラズマ・ビームの大面積高効率生成および機能性薄膜作成、太陽光発電、ワイヤレス給電・送電などを研究しています。

研究者情報

学位

  • 博士（工学）（九州大学）

ホームページURL

J-Global ID

現在の研究分野（キーワード）

    地球環境にやさしい電磁エネルギー利用をテーマに、高周波プラズマ・ビームの大面積高効率生成および機能性薄膜作成、太陽光発電、ワイヤレス給電・送電などを研究しています。

経歴

  • 2015年04月 - 現在  近畿大学産業理工学部電気電子工学科教授

所属学協会

  • 電気学会   プラズマ・核融合学会   応用物理学会   

研究活動情報

論文

  • Hiroshi Muta; Hiroyuki Taguchi; Teppei Yamanishi; Go Hirano; Satoshi Nishida
    Vacuum 217 112530-1 - 112530-7 2023年11月 [査読有り]
  • 非平衡プラズマジェットCVD法によるシリコン製膜時に装置内圧力が製膜速度，膜質におよぼす影響
    西田 哲; 納土 亮; 牟田 浩司; 栗林 志頭眞
    化学工業論文集 41 2 148 - 152 2015年 [査読有り]
  • 西田哲; 牟田浩司; 栗林志頭眞
    ながれ（日本流体力学会誌） 34 1 15 - 20 日本流体力学会 2015年
  • Tsukasa Yamane; Shinya Nakano; Sachiko Nakao; Yoshiaki Takeuchi; Ryuta Ichiki; Hiroshi Muta; Kiichiro Uchino; Yoshinobu Kawai
    JAPANESE JOURNAL OF APPLIED PHYSICS 53 11 116101-1 - 116101-4 2014年11月 [査読有り]
     
    The characteristics of a VHF SiH4/H-2 plasma (frequency: 60 MHz) at high pressures were examined as a function of silane concentration with a heated Langmuir probe. Anomalous reductions in electron saturation current were observed, suggesting the existence of many negative ions. An estimation of the concentration of negative ions was attempted using the sheath theory including negative ions. It was found that there exist H- and, SiH3- ions as dominant negative ions in the VHF SiH4/H-2 plasma. In addition, the measured floating potential agreed with the theoretical value. (C) 2014 The Japan Society of Applied Physics
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  • Satoshi Nishida; Hiroshi Muta; Shizuma Kuribayashi
    JOURNAL OF CHEMICAL ENGINEERING OF JAPAN 47 6 478 - 482 2014年06月 [査読有り]
     
    In this study, a high speed jet was used to deposit silicon by SiH4/H-2 plasma-enhanced chemical vapor deposition (PE-CVD), demonstrating a higher deposition rate than conventional PE-CVD. The shape of the deposited silicon material was found to depend on the mass-flow rate of the SiH4/H-2 mixture. The velocity profiles of the jet flow were subsequently analyzed by computational fluid dynamics (CFD), with the results indicating that the velocity of the jet significantly influences the mass of silicon deposited on a glass substrate due to variation in mass transfer near substrate surface.
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  • W. Chen; K. Ogiwara; K. Koge; K. Tomita; K. Uchino; Y. Kawai
    Engineering Sciences Reports, Kyushu University 35 1 6 - 11 Interdisciplinary Graduate School of Engineering Sciences, Kyushu University 2013年09月 [査読有り]
     
    The dependences of the VHF plasma parameters on the gas pressure and power were examined by using the Laser Thomson scattering method, where the VHF plasma was produced in the high pressure region by the balanced power feeding method. It was found that the balanced power feeding method provides a high electron density plasma with low electron temperature at high pressures. This characteristics were confirmed by calculations using a 2-dimensional simulation code.
  • T. Yamane; S. Nakao; Y. Takeuchi; H. Muta; R. Ichiki; K. Uchino; Y. Kawai
    CONTRIBUTIONS TO PLASMA PHYSICS 53 8 588 - 591 2013年09月 [査読有り]
     
    The parameters of a SiH4/H-2 VHF plasma were measured as a function of silane gas concentration with a heated Langmuir probe. It was found that when the sailane gas concentration is increased, the nagative ion density increases. Here the negative ion density was estimated from the reduction of the electron saturation current. In addition, the dependence of the wall potential on the silane gas concentration agreed with the theoretical values derived from the Bohm sheath equation including negative ions. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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  • Tsukasa Yamane; Sachiko Nakao; Yoshiaki Takeuchi; Yasuhiro Yamauchi; Hiromu Takatsuka; Hiroshi Muta; Kiichiro Uchino; Yoshinobu Kawai
    SURFACE & COATINGS TECHNOLOGY 228 S433 - S436 2013年08月 [査読有り]
     
    A VHF SiH4/H-2 plasma was produced using a multi rod electrode and the plasma parameters were measured using a heated Langmuir probe, where the frequency of the power source was 80 MHz. The Langmuir probe characteristics indicated that when the concentration of SiH4/H-2 is increased, negative ions appear and at the same time the electron temperature increases. (C) 2012 Elsevier B.V. All rights reserved.
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  • Shizuma Kuribayashi; Yoshihiro Tsunekawa; Shoji Akahori; Daisuke Ando; Jiro Nakamura; Satoshi Nishida; Hiroshi Muta; Yoshiaki Takeuchi; Yasuhiro Yamauchi; Hiromu Takatsuka
    Surface and Coatings Technology 225 75 - 78 2013年06月 [査読有り]
     
    High rates of localized silicon deposition on a low temperature (473K) substrate impinged by an under-expanded supersonic jet in a conventional non-equilibrium-plasma chemical vapor deposition process at different excitation frequencies were observed. A single 0.3-mm internal diameter nozzle was used as one of the electrodes for the capacitively coupled plasma. A SiH4/H2 gas mixture at a pressure of 65kPa was injected through the nozzle into the vacuum chamber at a pressure of 800Pa. An under-expanded supersonic jet was generated and exhibited turbulence in the vicinity of the substrate surface. A maximum deposition rate of 4.5μm/s was obtained 10mm downstream from the nozzle with 0.8W/cm2 of 100MHz VHF power. © 2013 Elsevier B.V.
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  • J. Y. Zhang; R. Ichiki; Y. Kawai
    11TH APCPST (ASIA PACIFIC CONFERENCE ON PLASMA SCIENCE AND TECHNOLOGY) AND 25TH SPSM (SYMPOSIUM ON PLASMA SCIENCE FOR MATERIALS) 441 12010  2013年 [査読有り]
     
    The sheath voltage in SF6/Xe plasma was measured with the Langmuir probe and compared with the theoretical value calculated from the sheath equation including negative ions. The negative ion density was estimated from the reduction of the electron saturation current. It was found that the observed sheath voltages agree with the theoretical values qualitatively.
  • Yoshinobu Kawai; Kiichiro Uchino; Hiroshi Muta; Tobias Röwf
    Vacuum 87 123 - 127 2013年01月 
    © 2012 Elsevier Ltd. We produced a 915 MHz ECR plasma with TM01 microwaves for different magnetic flux density distributions and examined the radial profiles of the ion saturation current as a function of pressure and power. It was found that the 915 MHz ECR plasma is uniform over 200 mm in diameter around the L-cutoff density and when a diverging magnetic field is used, a low electron temperature plasma is realized.
  • Tatsuyuki Nishimiya; Tsukasa Yamane; Yoshiaki Takeuchi; Yasuhiro Yamauchi; Hiromu Takatsuka; Hiroshi Muta; Kiichiro Uchino; Yoshinobu Kawai
    Thin Solid Films 519 6931 - 6934 2011年08月 
    The control of very high frequency (VHF) discharge plasma at high pressures was attempted by loading a variable capacitor to the end of the multi rod electrode with which VHF plasma (frequency 60 MHz) was produced. It was found that the discharge region is controlled with the variable capacitor and VHF plasma uniform over 1 m is produced at high pressures. © 2011 Elsevier B.V.
  • Tatsuyuki Nishimiya; Tsukasa Yamane; Sachiko Nakao; Yoshiaki Takeuchi; Yasuhiro Yamauchi; Hiromu Takatsuka; Hiroshi Muta; Kiichiro Uchino; Yoshinobu Kawai
    Surface and Coatings Technology 205 2011年07月 
    A SiH4/H2 VHF plasma was produced with the multi rod electrode and the fundamental plasma parameters were examined as a function of pressure and power, where the frequency of the power source was 60MHz. It was found that the ion saturation current takes a peak at a certain power as well as pressure. These results were discussed from the point of view of electron trapping effect in VHF electric fields. In addition, anomalous reduction of the sheath potential was observed. © 2011 Elsevier B.V.
  • Hiroshi Muta; Satoshi Nishida; Shizuma Kuribayashi; Naoki Yoshikawa; Ryota Komatsu; Kiichiro Uchino; Yoshinobu Kawai
    Japanese Journal of Applied Physics 50 1 01AB07 - 01AB07-4 Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics 2011年01月 
    Using different frequencies of 2.45 GHz and 915 MHz, the effect of excitation frequency on the spatial distributions of a surface wave plasma for 450mm wafer processing was experimentally investigated at a medium pressure of 1 Torr. As a result, it was found that the mode number of standing waves which the surface waves form in the radial direction has great influence on the radial distribution of plasma density. Consequently, the plasma uniformity in the downstream region at 915 MHz was better than that at 2.45 GHz. On the other hand, the electron temperature was roughly constant and below 1.5 eV except in the vicinity of the quartz window at both frequencies. © 2011 The Japan Society of Applied Physics.
  • Yoshinobu Kawai; Kiichiro Uchino; Hiroshi Muta; Shinji Kawai; Tobias Röwf
    Vacuum 84 1381 - 1384 2010年06月 
    To develop ECR plasma source for industrial applications, we produced a large diameter ECR plasma and examined radial profiles of the ion saturation current as a function of pressure and power. It was found that ECR plasma uniform over 300 mm is produced for pressures higher than 1 mTorr and the electron temperature decreases with increasing pressures. © 2010 Elsevier Ltd. All rights reserved.
  • Yasuhiro Yamauchi; Tomoyoshi Baba; Tsukasa Yamane; Yoshiaki Takeuchi; Hiromu Takatsuka; Hiroshi Muta; Kiichiro Uchino; Yoshinobu Kawai
    Physica Status Solidi (C) Current Topics in Solid State Physics 7 549 - 552 2010年05月 
    Dominant ion species in VHF SiH4/H2 plasma (frequency 60 MHz) were estimated from the sheath potential and the electron temperature measured with the Langmuir probe. As the concentration of SiH4/H 2 was increased, the transition of dominant ion species from H + to SiH3+ was observed. When the discharge gap was shorter than 10 mm, measured sheath potentials were anomalously low compared with the calculated ones. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
  • 亀山 尊寛; 西田 哲; 牟田 浩司; 栗林 志頭眞
    化学工学会 研究発表講演要旨集 2010 555 - 555 公益社団法人 化学工学会 2010年
  • Yasuhiro Yamauchi; Tomoyoshi Baba; Yoshiaki Takeuchi; Hiromu Takatsuka; Hiroshi Muta; Kiichiro Uchino; Yoshinobu Kawai
    Plasma Processes and Polymers 6 2009年12月 
    A new balanced power feeding method was applied to produce a large area VHF plasma using short discharge gaps and the electric characteristics of the discharge electrodes were measured as a function of pressure for different discharge gaps. It was found that the new balanced power feeding method is suitable for short gap discharges in the VHF range. Furthermore, the plasma parameters were examined as a function of pressure for different discharge gaps. The plasma density peaked at a certain pressure independent of the length of discharge gaps. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
  • Hiroshi Muta; Shinichi Kishida; Masayoshi Tanaka; Yasuhiro Yamauchi; Tomoyoshi Baba; Yoshiaki Takeuchi; Hiromu Takatsuka; Yoshinobu Kawai
    PLASMA PROCESSES AND POLYMERS 6 S792 - S795 2009年 [査読有り]
     
    The plasma parameters in a VHF plasma with a narrow gap under high gaseous pressure were experimentally investigated. As a result of the Langmuir probe measurement for hydrogen plasma with a gap length of 5 mm and a pressure of 1 torr, it was found that the electron temperature (similar to 10 eV) was high enough to promote the dissociation reaction of SiH(4) molecules, and that a large amount of negative ions which could play a role in reducing the sheath potential were produced. on the other hand, the results of the ion measurement using a quadrupole mass spectrometer with an energy analyzer indicated that the highest produced ion was H(3)(+) and its incident energy to the substrate was low due to the collisions. These results suggest that the condition of high pressure and narrow gap are advantageous for the preparation of high-quality mu c-Si thin films.
  • Yasuhiro Yamauchi; Yoshiaki Takeuchi; Hiromu Takatsuka; Yuichi Kai; Hiroshi Muta; Yoshinobu Kawai
    SURFACE & COATINGS TECHNOLOGY 202 22-23 5668 - 5671 2008年08月 [査読有り]
     
    A VHF SiH4/H-2 plasma was produced using a multi-rod electrode of 1200 mmx115 mm and the characteristics of VHF plasma at high pressure were measured with a heated Langmuir probe, where the frequency of VHF power source was 60 MHz and the power was up to 450 W. The pressure was ranged from 1 Torr to 3 Torr. When the pressure was increased, the ion saturation current density decreased independent of the concentration ratio of SiH4/H2 and the electron temperature tended to increase at high Pressures. Furthermore, when the VHF power was increased, the wall potential decreased at high pressures. (C) 2008 Elsevier B.V. All rights reserved.
  • Doan Ha Thang; Hiroshi Muta; Yoshinobu Kawai
    THIN SOLID FILMS 516 13 4452 - 4455 2008年05月 [査読有り]
     
    The plasma parameters in 915 MHz ECR plasma with SiH4/H-2 mixtures were investigated using a heated Langmuir probe where extremely high dilution ratio of H-2 to SiH4 was used for preparing microcrystalline silicon thin films. As the incident microwave power was increased, the electron temperature (T-e) decreased from 7 eV to 2-3 eV and the electron density (n(e)) increased from 0.5 x 10(11) cm(-3) to 1.3 x 10(11) cm(-3), that is, low T-e ECR plasma with high n, was realized using 915 MHz microwaves. As a result of the film deposition, it was found that there is a correlation between the T-e and crystallinity of the microcrystalline silicon. Furthermore, it was shown that high deposition rate can be realized by increasing the gas flow rate. (c) 2007 Elsevier B.V. All rights reserved.
  • Large area VHF plasma production by a balanced power feeding method
    T. Nishimiya; Y. Takeuchi; Y. Yamauchi; H. Takatsuka; T. Shioya; H. Muta; Y. Kawai
    Thin Solid Films 516 4430 - 4434 2008年 [査読有り]
  • Y. Yamauchi; Y. Takeuchi; H. Takatsuka; H. Yamashita; H. Muta; Y. Kawai
    CONTRIBUTIONS TO PLASMA PHYSICS 48 4 326 - 330 2008年 [査読有り]
     
    A VHF H-2 plasma was produced with the multi rod electrode at high pressure and the plasma parameters were measured as a function of pressure for different VHF powers at 60 MHz. It was found that when the pressure is increased, the ion saturation current peaks at certain pressure and finally decreases at high pressures, while the electron temperature is around 10 eV. The wall potential at high pressure was lower than the values estimated from the electron temperature using the probe theory. Furthermore, the anomalous reduction of the electron saturation current was observed. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
  • Tatsuyuki Nishimiya; Yoshiaki Takeuchi; Yasuhiro Yamauchi; Hiromu Takatsuka; Yuichi Kai; Hiroshi Muta; Yoshinobu Kawai
    PLASMA PROCESSES AND POLYMERS 4 S991 - S994 2007年04月 [査読有り]
     
    A SiH(4)/H(2) VHF plasma with a frequency of 60 MHz was produced with a multi-rod electrode of 1200 x 114 mm(2) at high pressure. The plasma parameters were measured as a function of pressure and concentration of SiH(4) to H(2) with a tiny heated Langmuir probe. When the pressure was increased, the plasma density decreased independent of the concentration of SiH(4) to H(2), while the electron temperature increased to about 11 eV at 3 Torr. The wall potential defined as the potential difference between the plasma potential and the floating potential was anomalously small at high pressure, suggesting very low ion bombardment. Furthermore, Langmuir probe characteristics indicated that there exist much negative ions.
  • N Itagaki; K Sasaki; Y Kawai
    THIN SOLID FILMS 506 479 - 484 2006年05月 [査読有り]
     
    Plasma parameters of a SiH4/H-2 electron-cyclotron-resonance (ECR) plasma are measured in detail as a function of microwave power, where 915 MHz microwaves are used. It is observed that the electron temperature (T-c) in the magnetic field whose gradient is small varies from about 3 eV to 8 eV through the control of the external conditions. From the electromagnetic waves measurements and the simulations of the microwave power absorption, T-c is found to depend on the spatial profiles of the power absorption, which suggests that T-c in a SiH4/H-2 ECR plasma can be changed by changing the power absorption profile. (c) 2005 Elsevier B.V. All rights reserved.
  • M Koga; H Muta; A Yonesu; Y Kawai
    THIN SOLID FILMS 506 494 - 498 2006年05月 [査読有り]
     
    The ion temperature in a large diameter plasma is measured with the high-resolution optical emission spectroscopy. It is found that the ion temperature is low when the radial distribution of the plasma is flat profile compared with that in the case of peaked profile. The results of numerical calculation carried out by using the hybrid model agree well with the experimental results. It is found that the calculated ion temperature increases as the radial electric field increases. Thus, it is concluded that the decrease of the ion temperature is due to the decrease of the radial electric field. (c) 2005 Elsevier B.V. All rights reserved.
  • M Koga; H Muta; A Yonesu; Y Kawai
    VACUUM 80 7 771 - 775 2006年05月 [査読有り]
     
    The ion temperature in a large diameter plasma is measured with the high-resolution optical emission spectroscopy. It is found that the ion temperature is low when the radial distribution of the plasma is flat profile compared with that in the case of peaked profile. The results of numerical calculation carried out by using the hybrid model validate the assumption of Boltzmann distribution in plasma and agree well with the experimental results. Thus, it is concluded that the decrease of the ion temperature is caused by the decrease of the radial electric field. (c) 2005 Elsevier Ltd. All rights reserved.
  • Characteristics of the plasma parameters in the fabrication of microcrystalline silicon thin films using 915 MHz ECR plasma
    D. H. Thang; K. Sasaki; H. Muta; N. Itagaki; Y. Kawai
    Thin Solid Films 506 485 - 488 2006年 [査読有り]
  • H Muta; DH Thang; Y Kawai
    SURFACE & COATINGS TECHNOLOGY 200 1-4 850 - 854 2005年10月 [査読有り]
     
    Characteristics of plasma parameters in N-2/Ar ECR plasma are investigated experimentally and numerically. Especially we focused on the characteristics of some plasma parameters from the viewpoint of high-efficiency production of atomic nitrogen N. As a result, it was found experimentally that the electron temperature increased locally in the downstream region within limited conditions of pressure, magnetic field and mixture ratio. In addition, one-dimensional fluid simulation was carried out successfully and indicated that N-2(+) can have a unique axial distribution corresponding to the experimental conditions. (c) 2005 Published by Elsevier B.V.
  • M Koga; H Muta; A Yonesu; Y Kawai
    SURFACE & COATINGS TECHNOLOGY 193 1-3 147 - 151 2005年04月 [査読有り]
     
    The ion temperature in N-2/Ar and O-2/Ar electron cyclotron resonance (ECR) plasma is measured by high-resolution optical emission spectroscopy for pressure of 0.27 Pa and microwave power of 2.4 kW. It is found that as the nitrogen gas concentration is increased, the ion temperature in N-2/Ar ECR plasma decreases drastically and the uniformity of the radial electron density distribution improves. It is considered that the decrease of the ion temperature in N-2/Ar ECR plasma is caused by the decrease of the radial electric field. In the case of O-2/Ar ECR plasma, the ion temperature increases as the oxygen gas concentration is increased. It is considered that the increase of the ion temperature in O-2/Ar ECR plasma is caused by energy exchange between electrons and ions because the electron temperature considerably increases with increasing of the oxygen concentration. (c) 2004 Elsevier B.V. All rights reserved.
  • Y Kawai; N Itagaki; M Koga; H Muta
    SURFACE & COATINGS TECHNOLOGY 193 1-3 11 - 16 2005年04月 [査読有り]
     
    The experiments and simulations on the control of the plasma parameters are performed using large diameter electron cyclotron resonance (ECR) plasmas. It is found that the plasma parameters are controlled by diluting with N-2 gas in the mirror magnetic field. The electron temperature (T-c) decreases down to 40% and the electron density (n(c)) increases up to 80%, respectively, that is, a low T-c ECR plasma with high n(e) is realized. Furthermore, the T-c control is attempted by changing the spatial profile of the microwave power absorption. It is observed that T-e decreases with changing the power absorption profile that is achieved by changing the external conditions such as incident microwave power, magnetic field configuration, and incident microwave frequency. The production mechanism of an ECR plasma with plasma parameter variable is also discussed. (c) 2004 Elsevier B.V. All rights reserved.
  • Thang Doan Ha; Muta Hiroshi; Sasaki Kazunari; Kusakabe Masakazu; Itagaki Naho; Kawai Yoshinobu
    九州大学大学院総合理工学報告 26 3 337 - 340 Interdisciplinary Graduate School of Engineering Sciences, Kyushu University 2004年12月 
    Plasma parameters were measured successfully in a 915 MHz ECR plasma with H2 and SiH4/H2 mixtures using a heated Langmuir probe. The experimental results show that there is a correlation between electron temperature and crystallinity of microcrystalline silicon. From the data analysis, it was found that there is a possibility that the electron temperature increased by production of negative ions promotes the crystallinity via some chemical reactions.
  • C Niikura; N Itagaki; M Kondo; Y Kawai; A Matsuda
    THIN SOLID FILMS 457 1 84 - 89 2004年06月 [査読有り]
     
    We developed a novel technique for high-rate growth of microcrystalline silicon films by plasma-enhanced chemical vapor deposition, designing a novel cathode with interconnected multi-holes, which leads to generate uniformly flat-distributed stable high-density-plasma spots near cathode-surface. Improvement of quality of high-rate grown films was discussed, and microcrystalline silicon films with a low defect density of 1.2 x 10(16) cm(-3) were obtained at a high rate of 7.7 nm/s, demonstrating the efficient gas dissociation and the effectiveness of the novel cathode. The spatial distribution of plasma at cathode-surface holes was analyzed using optical emission spectroscopy for further optimization of plasma conditions. (C) 2003 Elsevier B.V. All rights reserved.
  • SN Abolmasov; H Muta; Y Kawai
    VACUUM 74 3-4 497 - 501 2004年06月 [査読有り]
     
    The paper reports on a cold-cathode Penning ionization gauge (PIG) discharge ignited and sustained by microwave electron cyclotron resonance argon plasma at pressures below 0.01 Pa. The discharge was created in a 20-cm-diam PIG anode with a length-to-diameter ratio of two. The experimental data show that the discharge exists in a high-current discharge mode with a considerable cathode fall and a weak anode fall. The measurements of the discharge current and plasma parameters as a function of the discharge parameters are reported. The mechanism of the discharge and its possible applications are discussed. (C) 2004 Elsevier Ltd. All rights reserved.
  • Measurement of ion temperature in N2Ar and O2Ar ECR plasma
    Mayuko Koga; Shinji Iwata; Hiroshi Muta; Akira Yonesu; Yoshinobu Kawai
    Vacuum 74 491 - 495 2004年 [査読有り]
  • Control of the electron temperature by varying the resonance zone width in ECR plasma
    Thin Solid Films 457 59 - 63 2004年 [査読有り]
  • Investigation of the electron energy distributions in Ar/N2 ECR plasmas with magnetic mirror
    Hiroshi Muta; Doan Ha Thang; Yoshinobu Kawai
    Vacuum 74 373 - 377 2004年 [査読有り]
  • SN Abolmasov; M Shindo; MV Buttlar; H Muta; AA Bizyukov; Y Kawai
    SURFACE & COATINGS TECHNOLOGY 174 142 - 146 2003年09月 
    A combined ion source with 20 cm beam diameter, utilizing both a cold-cathode Philips or Penning ionization gauge (PIG) discharge and an electron cyclotron resonance (ECR) discharge, has been built and tested. The ion source has been designed to study what effects, if any, might be induced by superimposing microwave power at the ECR condition onto a cold-cathode PIG ion source at low pressures ( less than or equal to 10(-4) Torr). The first experiments with argon gas indicate that the ECR coupling at low pressures results in: (a) transformation of the PIG discharge mode with a dominant anode fall into the hybrid discharge mode with a dominant cathode fall; (b) stabilization of the PIG discharge; and (c) enhanced ion beam output due to increased ionization inside the ion source. The ion beam current is 150 mA (with a beam current density at its axis of 0.35 mA/cm(2)), at an anode voltage of 750 V, a microwave power of 200 W and a gas pressure of 0.05 mTorr. The ion source design and the results of preliminary experiments are presented. A stable low-pressure operation mode of the ion source might be promising for broad ion beam production. (C) 2003 Elsevier Science B.V. All rights reserved.
  • H Muta; N Itagaki; M Koga; Y Kawai
    SURFACE & COATINGS TECHNOLOGY 174 152 - 156 2003年09月 
    The mechanism to generate a low-electron-temperature electron cyclotron resonance plasma using magnetic filed and mixture ratio was investigated by means of simulation and experiment. As the working gas, a mixture of argon and nitrogen was used under the assumption of plasma nitriding. The results showed that the application of the magnetic mirror was valid for decreasing the electron temperature due to both effects of plasma confinement and temperature anisotropy. Furthermore, the addition of nitrogen was found to be effective to decrease the electron temperature approximately 2 eV due to the vibrational excitation of nitrogen molecules by electron impact. (C) 2003 Elsevier Science B.V. All rights reserved.
  • H Muta; M Koga; N Itagaki; Y Kawai
    SURFACE & COATINGS TECHNOLOGY 171 1-3 157 - 161 2003年07月 
    In general, electron temperature is an important plasma parameter which has much influence in the film property. In this paper, the mechanism for decreasing the electron temperature in an electron cyclotron resonance plasma is numerically investigated using a fluid model. A mixture of argon and nitrogen is used as the working gas under the assumption of plasma nitridation. The simulation was carried out with typical magnetic field configurations and various mixture ratios. As a result, it was found that the application of magnetic mirror was suitable for the production of a low-electron-temperature plasma. Besides, the calculation results indicated that the addition of nitrogen was effective to decrease the electron temperature approximately 2 eV due to the vibrational excitation of nitrogen molecules by electron impact. (C) 2003 Elsevier Science B.V. All rights reserved.
  • Electron-temperature dependence of nitrogen dissociation in 915 MHz ECR plasma
    N. Itagaki; S. Iwata; H. Muta; A. Yonesu; S. Kawakami; N. Ishii; Y. Kawai
    Thin Solid Films 435 259 - 263 2003年 [査読有り]
  • N Itagaki; Y Kawai; S Kawakami; N Ishii
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 20 6 1969 - 1973 2002年11月 [査読有り]
     
    The electron temperature of a 915 MHz electron cyclotron resonance (ECR) plasma was controlled in a wide range by adjusting the incident microwave power when the gradient in the magnetic field strength near the resonant zone was gentle. From the numerical simulations of the microwave-power absorption, the electron temperature in an ECR plasma was found to change with changing spatial profiles of the power absorption. It was also suggested from our experimental and numerical results that the electron temperature is controlled by changing the gradient in the magnetic field strength and/or the microwave frequency because the power absorption profile may be changed with changing effective resonance zone width. (C) 2002 American Vacuum Society.
  • N Itagaki; S Kawakami; N Ishii; Y Kawai
    VACUUM 66 3-4 323 - 328 2002年08月 [査読有り]
     
    The effect of microwave discharge-frequency of 915 MHz on the electron temperature and the plasma uniformity in electron cyclotron resonance (ECR) plasma was studied by measuring the plasma parameters under various experimental conditions. It was found that the electron temperature of 915 MHz ECR plasma could be reduced to 1.3 eV, which is lower than that of conventional 2.45 GHz ECR plasma by 2-3 eV. The radial uniformity of 915 MHz ECR plasma is high, and can be further improved by optimizing the external parameters. (C) 2002 Elsevier Science Ltd. All rights reserved.
  • H Muta; N Itagaki; Y Kawai
    VACUUM 66 3-4 209 - 214 2002年08月 
    The mechanism to decrease the electron temperature in an electron cyclotron resonance (ECR) plasma was numerically investigated using a fluid model. A mixture of argon and nitrogen was used as the working gas under the assumption of plasma nitriding by reactive sputtering. It was found that the power loss due to the vibrational excitation of nitrogen molecules by electron impact contributed to the decrease of electron temperature and the effect was promoted by the application of a mirror-type magnetic field configuration. (C) 2002 Published by Elsevier Science Ltd.
  • M Shindo; Y Kawai
    THIN SOLID FILMS 407 1-2 204 - 208 2002年03月 [査読有り]
     
    The density ratio of negative ions to positive ions alpha in a SF6/Ar double plasma, O-2/Ar, CF4/Ar and C4F8/Ar electron cyclotron resonance (ECR) plasmas were estimated using the propagation characteristics of the ion acoustic waves (fast mode). Here, the phase velocity of the fast mode in a double plasma and an ECR plasma were measured with the interferometric method and the time of flight method, respectively. As a result, it was found that alpha was more than 0.9 in the SF6/Ar double plasma, and less than 0.5, 0.3 and 0.4 in the O-2/Ar, CF4/Ar and C4F8/Ar ECR plasma, respectively. Furthermore, it was observed that a has a large value in the lower gas mixture rate region in the case of ECR plasmas. (C) 2002 Elsevier Science B.V. All rights reserved.
  • M Shindo; Y Kawai
    SURFACE & COATINGS TECHNOLOGY 142 355 - 359 2001年07月 [査読有り]
     
    An attempt to measure the negative ion density in an O-2/Ar electron cyclotron resonance (ECR) plasma is made with two methods. The first one is to estimate the density ratio of negative ions to positive ions, a, from the reduction rate of the ion and electron saturation current obtained with the Langmuir probe. The second one is to calculate alpha from the measured phase velocity of the fast mode of ion acoustic waves (IAWs). The IAWs are launched along magnetic fields using a wire-antenna where positive pulse voltages are applied, and are detected as a fluctuation of ion saturation current. As a result, alpha < 0.3 is found. it is also found that a obtained with both methods agree qualitatively. Furthermore, the spatial distribution and the gas mixture ratio dependence of a are investigated. It is found that alpha has the optimum value at the gas mixture ratio of 15%, and that a near the wall is larger than that in the center region. (C) 2001 Elsevier Science B.V. All rights reserved.
  • N Itagaki; Y Ueda; N Ishii; Y Kawai
    SURFACE & COATINGS TECHNOLOGY 142 546 - 550 2001年07月 [査読有り]
     
    An electron cyclotron resonance (ECR) plasma with low electron temperature parallel to the magnetic field was produced by applying the mirror magnetic field for Ar, Ar/N-2 and H-2 gasses. It was found that the temperature parallel to the magnetic field was lower than the temperature perpendicular to the field by 5 similar to 50% and decreased at the 'throat' of the mirror magnetic field. Especially, the electron temperature parallel to the magnetic field was observed to be less than 2 eV in the Ar/N-2 and the H-2 plasma. Our experimental results suggested that the high-quality thin films could be prepared by setting the substrate perpendicular to the field lines at the 'throat' of mirror magnetic field because of the decrease in ion bombardment to the substrate. (C) 2001 Elsevier Science B.V. All rights reserved.
  • N Itagaki; Y Ueda; N Ishii; Y Kawai
    THIN SOLID FILMS 390 1-2 202 - 207 2001年06月 [査読有り]
     
    Low-electron-temperature ECR plasma with high electron density was realized under the mirror magnetic field configuration in the H-2 and the Ar/N-2 plasma. Especially, the electron temperature was observed to be less than 2 eV in the Ar/N-2 plasma. it was found from the calculation of particle and power balance in steady state that the decrease in the electron temperature observed in the Ar/N-2 plasma was due to the effect of the magnetic-mirror confinement of the N-2 plasma. Furthermore, our calculated results suggest that the effect of magnetic-mirror on the decrease in the electron temperature depends on the collisional cross section between electrons and neutral particles. (C) 2001 Elsevier Science B.V. All rights reserved.
  • N Itagaki; T Yoshizawa; Y Ueda; Y Kawai
    THIN SOLID FILMS 386 2 152 - 159 2001年05月 [査読有り]
     
    To clarify the production mechanism of a high-density uniform electron cyclotron resonance (ECR) plasma, the spatial wave patterns of electromagnetic waves in the plasma were measured by the interferometric method under several experimental conditions and compared with the power absorption profiles indicated by simulation. It was experimentally shown that the refraction of the right circularly polarized wave (the R wave) corresponds to the spatial profile of the plasma density. On the other hand, the simulation showed the correlation between the wave refraction and power absorption, which implies that the power transportation depending upon the refraction of the R wave has a great influence on ECR plasma uniformity. Furthermore, it was found that the plasma uniformity was improved by applying permanent magnets, and the maximum electron density in the case of the uniform plasma is approximately 2 x 10(11) cm(-3). The ion temperature in the Ar plasma decreases from 0.17 to 0.06 eV in the presence of the permanent magnets. (C) 2001 Elsevier Science B.V. All rights reserved.
  • N Itagaki; Y Ueda; N Ishii; Y Kawai
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40 4A 2489 - 2494 2001年04月 [査読有り]
     
    An electron cyclotron resonance (ECR) plasma with a low electron temperature (< 2eV) and high electron density (similar to 10(12) cm(-3)) was realized in a mirror magnetic field for Ar/N-2 or N-2 gas. It was found based on the particle and power balance that the decrease in the electron temperature was due to the magnetic-mirror confinement depending on the collision cross section between electrons and neutral particles. The experimental and numerical results suggest that diluting with N-2 gas, whose excitation cross section peaks at a low electron energy of about 2 eV, in the mirror magnetic field enables us to reduce the electron temperature efficiently in an ECR plasma.
  • M Shindo; Y Ueda; S Kawakami; N Ishii; Y Kawai
    VACUUM 59 2-3 708 - 715 2000年11月 [査読有り]
     
    The parameters of an electron-cyclotron resonance (ECR) C4F8/Ar gas plasma were measured using both a heated Langmuir probe and an 8-mm microwave interferometer. An attempt to estimate the negative ion density was made with three methods in the case where C4F8 and Ar gas mixture rate was less than 25%; the first method is based on the analysis of the probe characteristics, and the others on the charge neutrality condition. It was found that the ratio of the negative ion density to the positive ion density was 20-50%, depending on the assumed positive ion mass. Furthermore, the self-bias effect in C4F8/Ar ECR plasma was discussed. (C) 2000 Elsevier Science Ltd. All rights reserved.
  • H Muta; Y Ueda; Y Kawai
    SURFACE & COATINGS TECHNOLOGY 131 1-3 44 - 49 2000年09月 
    In electron cyclotron resonance (ECR) plasmas for material processing, microwave propagation is very complicated due to the finite-sized, inhomogeneous and magnetized plasmas. According to the recent experimental research, the propagation of the extraordinary wave (X wave) was observed in a periphery of the plasma near the substrate. This wave may be important for material processing because the power deposition into the plasma can occur due to upper hybrid resonance (UHR) and contribute to the plasma uniformity near the substrate. In this paper, the results of a numerical simulation for an argon plasma using a self-consistent particle-wave model are presented and the microwave propagation is investigated. As a result, it was found numerically that the X wave propagated and deposited the power into the plasma in the case that a vacuum region exists in the plasma. (C) 2000 Elsevier Science B.V. All rights reserved.
  • N. Itagaki; A. Fukuda; T. Yoshizawa; M. Shindo; Y. Ueda; Y. Kawai
    Surface and Coatings Technology 131 1-3 54 - 57 2000年 [査読有り]
     
    Pulse modulation of the incident microwave power was investigated for the control of plasma parameters and improvement of the films deposited in ECR plasma. Measurements of the temporal variation of plasma parameters in the pulse-modulated ECR plasma indicate that the electron density varies little in time while the electron temperature decreases rapidly within 10 μs after the discharge. The results suggest that pulse modulation where the power-off period is approximately 10 μs enables reduction of the mean electron temperature while keeping a high electron density. Furthermore, we have prepared hydrogenated amorphous silicon films by the ECR plasma CVD method. It was found that the ratio of photoconductivity to dark conductivity of the film was improved from 103 to 2.5 x 105 without heating the substrate and the deposition rate was 14 Å/s by pulse-modulated ECR plasma. (C) 2000 Elsevier Science B.V. All rights reserved.
  • M Shindo; S Hiejima; Y Ueda; S Kawakami; N Ishii; Y Kawai
    SURFACE & COATINGS TECHNOLOGY 116 1065 - 1069 1999年09月 [査読有り]
     
    The parameters of an electron cyclotron resonance (ECR) C4F8/Ar plasma were measured as a function of gas mixture rate and incident microwave power at different radial positions using both a heated Langmuir probe and a microwave interferometer. As the ratio of C4F8 gas to argon gas was increased, the electron density measured with the microwave interferometer decreased, which suggests that a large quantity of negative ions exist in the ECR C4F8/Ar plasma. An attempt to estimate the negative-ion density was made with the Langmuir probe. It was found that the ratio of negative ions to positive ions is from 60 to 80% in the ECR C4F8 plasma. (C) 1999 Elsevier Science S.A. All rights reserved.
  • Y Ueda; H Muta; Y Kawai
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 38 7B 4333 - 4337 1999年07月 
    Stable vacuum regions in the periphery of an electron cyclotron resonance (ECR) plasma near a quartz window were found to possibly contribute to plasma uniformity as a kind of a waveguide for incident electromagnetic waves. Mode conversion of electromagnetic waves with long wavelength into the right circularly polarized wave was observed clearly at a certain radial position. In order to investigate the effects of electromagnetic waves propagating in the vacuum region on plasma production or uniformity, microwave propagation in a partially filled plasma chamber was examined numerically. The numerical results indicated that the electromagnetic waves with long wavelengths in the periphery of the plasma were converted into extraordinary or electrostatic waves outside the ECR region and that power absorption took place locally. Furthermore, it was found to be strongly dependent on the width and shape of the vacuum region and gas pressure. Physical considerations of these results revealed the reason why plasma uniformity is influenced by a magnetic field gradient.
  • H Muta
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 38 7B 4455 - 4459 1999年07月 
    In finite-sized and inhomogeneous ECR plasmas for materials processing, the behavior of electrons is very complicated because there are highly nonlinear interactions between the electrons and the injected microwaves which can propagate with various modes corresponding to the magnetized bounded plasmas. In this paper, the results of numerical simulation for an argon plasma using a self-consistent particle-wave model are presented and the behavior of electrons in the plasma is investigated. In particular, it is investigated how the electrons absorb the microwave power and how the electron energy distribution function (EEDF) is formed. In addition, the simulated electron density and temperature data are compared with the experimental data by laser measurement. As a result, it is found that the model presented here can reproduce the experimental data well.
  • M Shindo; S Hiejima; Y Ueda; S Kawakami; N Ishii; Y Kawai
    THIN SOLID FILMS 345 1 130 - 133 1999年05月 [査読有り]
     
    The parameters of an electron cyclotron resonance (ECR) C4F8/Ar plasma were measured with a heated Langmuir probe and an 8 mm microwave interferometer. As the ratio of C4F8 gas to Ar gas was increased the electron density measured with the microwave interferometer decreased, which suggests that a large quantity of negative ions exist in the ECR C4F8 plasma. An attempt to estimate the negative ion density was then made with the heated Langmuir probe. It was found that the ratio of negative ions to positive ions is from 30 to 80% in the ECR C4F8 plasma. (C) 1999 Elsevier Science S.A. All rights reserved.
  • Y Ueda; H Muta; Y Kawai
    APPLIED PHYSICS LETTERS 74 14 1972 - 1974 1999年04月 
    Spatial measurements of the ion saturation current density indicate stable vacuum regions in a periphery of electron cyclotron resonance (ECR) plasma. The vacuum regions have a possibility to contribute to plasma uniformity by behaving as a waveguide for the incident electromagnetic waves. Mode conversion of electromagnetic waves with long wavelength to the right circular polarized wave was observed experimentally at a certain radial position. Furthermore, microwave propagation in a partially filled plasma chamber was examined numerically. The simulation indicated that the electromagnetic waves with long wavelengths propagated in a periphery of the plasma were converted into the extraordinary wave or electrostatic waves outside the ECR region and that the power absorption took place at the local regions. Physical considerations toward these results imply the reason why the plasma uniformity is influenced by magnetic field gradient. (C) 1999 American Institute of Physics. [S0003-6951(99)02114-2].
  • M Shindo; Y Ueda; S Kawakami; N Ishii; Y Kawai
    INTERNATIONAL CONFERENCE ON PHENOMENA IN IONIZED GASES, VOL II, PROCEEDINGS 31 - 32 1999年 [査読有り]
  • H Muta; Y Ueda; Y Kawai
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 36 7B 4773 - 4776 1997年07月 [査読有り]
     
    Electron cyclotron resonance (ECR) plasmas which can generate high density under low pressure are widely used in plasma processing applications such as etching for semiconductor and thin-film deposition. In these applications, ECR plasmas are required to be uniform over a large-diameter wafer. For this problem, the analysis of microwave propagation in the plasma is important because the microwaves can have significant influence on the formation of the spatial profiles of the plasma. In this paper, we present a three-dimensional simulation of microwave propagation in an inhomogeneous ECR plasma using the finite-difference time-domain (FDTD) method. As a result, it was found that the wave propagation was sensitive to the spatial profile of the plasma density, and much different from that in an isotropic dielectric medium. In addition, it was found that a three-dimensional model reproduced the experimental results measured by interferometry much better than a one-dimensional model.
  • W Cronrath; MD Bowden; K Uchino; K Muraoka; H Muta; M Yoshida
    JOURNAL OF APPLIED PHYSICS 81 5 2105 - 2113 1997年03月 
    Spatial profiles of electron density and temperature of electron cyclotron resonance discharge plasmas have been successfully measured using laser Thomson scattering. The results, thus obtained, were valuable for quantitative comparison with results of a computer simulation. Measurements were performed for two cases with different locations of the electron cyclotron resonance zones. Simulation results obtained from a hybrid code, which treats ions and neutral particles as discrete particles and electrons as a fluid, were fitted to the experimental profiles of the electron density and temperature by adjusting the microwave power deposition profiles. From these comparisons and an analysis of other simulation data, it was found that the large difference of radial electron density profiles for two discharge conditions was caused by the difference of radial space-charge electric-field distributions. The radial electron temperature distribution determined the radial electric field that drove the ions radially and also resulted in a peaked electron density profile for one case and a more uniform profile for the other case. It is also shown that Coulomb collisions of electrons with ions as well as electron-neutral collisions are important for the analysis of electron behavior along the magnetic field lines. (C) 1997 American Institute of Physics.
  • H Muta; T Sakoda; Y Ueda; Y Kawai
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 36 2 872 - 876 1997年02月 
    Recently, there have been many efforts in modeling new processing plasma sources such as electron cyclotron resonance (ECR) plasmas, helicon-wave-excited plasmas and inductively coupled plasmas. In the new sources ECR plasmas are especially difficult to model because of highly nonlinear coupling between microwaves and the magnetized plasma. Accordingly, appropriate modeling of the interactions between the microwave and the magnetized plasma is the key to resolving the problem. In this paper, we present numerical simulations based on a one-dimensional model using the finite-difference time-domain (FDTD) method and discuss the characteristics of the microwave propagation in ECR plasmas. Furthermore, we compare the simulation results with the experimental results by interferometry measurement and show the validity of the model. As a result, it is found that the model proposed here can simulate the qualitative characteristics of the microwave propagation in the plasma, which strongly depend on gas pressure.
  • Study of the Effect of a Probe on the Plasma in the Source Region of an Electron Cyclotron Resonance Discharge
    M. D. Bowden; F. Kimura; H. Muta; K. Uchino; K. Muraoka; M. Maeda
    Journal of Vacuum Science & Technology A 11 6 2893 - 2896 1993年11月 [査読有り]
  • Thomson scattering measurements of electron temperature and density in an electron cyclotron resonance plasma
    M. D. Bowden; T. Okamoto; F. Kimura; H. Muta; K. Uchino; K. Muraoka; T. Sakoda; M. Maeda; Y. Manabe; M. Kitagawa; T. Kimura
    Journal of Applied Physics 73 6 2732 - 2738 1993年03月 [査読有り]
  • YOSHIDA K.
    Journal of Applied Electromagnetics in Materials 2 2 275 - 280 1991年07月 [査読有り]
  • 制御PMLSM磁気浮上列車の浮上系の最適ロバストサーボ系設計とシミュレーション
    吉田 欣二郎; 牟田 浩司
    電気学会論文誌D 107-D 8 972 - 979 1987年08月 [査読有り]
  • Hiroshi Muta; Kenta Mizuno; Satoshi Nishida; Shizuma Kuribayashi
    Thin Solid Films 523 41 - 45 
    Characteristics of very high frequency plasma produced by a balanced power feeding method were experimentally and numerically investigated by comparison with those of a conventional power feeding method. The measurement results of the plasma parameters in H 2 or SiH 4/H 2 plasma showed that the electron density was a few times higher and the gas pressure at which the plasma was stably sustained was much higher than that in the conventional power feeding. In addition, the electron temperature and the sheath potential near a substrate were lower by about 30%. The numerical simulation in accordance with the experimental condition suggested that the completely floating electrodes cause the decrease of the sheath potential. These characteristics of the plasma parameters seem to be effective for the decrease of ion bombardment damage. As a result of the microcrystalline silicon thin film fabrication, it was showed that the defect density in the balanced power feeding was lower. © 2012 Elsevier B.V. All rights reserved.
  • Satoshi Nishida; Satoshi Nishida; Satoshi Nishida; Ryo Nodo; Hiroshi Muta; Hiroshi Muta; Hiroshi Muta; Shizuma Kuribayashi; Shizuma Kuribayashi; Shizuma Kuribayashi
    Kagaku Kogaku Ronbunshu 41 148 - 152 
    © 2015, The Society of Chemical Engineers, Japan. The effect of background pressure was investigated in silicon deposition by plasma jet CVD, a recently developed CVD method to deposit silicon at a deposition rate over 1 µm/s. The deposition rate, deposition structure, and crystallinity of the deposited silicon were examined at pressures between 133 and 800 Pa, and it was found that the deposition rate increased with pressure increase. Drastic changes in the deposition rate and crystallinity were observed between 267 and 400 Pa. Part of the gas flow was considered to be transitional flow at 267 Pa and below. Knudsen number was calculated to estimate gas flow in the deposition chamber, and the flow was estimated to be transitional at lower background pressure conditions. Mass transfer around substrates was suppressed by decrease of the gas velocity due to the change of flow. Concentration of deposition precursors was estimated by calculation using CHEMKIN-PRO software, and the concentration of SiH2 was found to increase with decrease in the background pressure. Variation of crystallinity was explained by variations in the gas velocity of the main jet and precursor concentrations.

書籍

  • プラズマCVDにおける成膜条件の最適化に向けた反応機構の理解とプロセス制御・成膜事例
    牟田 浩司 (担当:分担執筆範囲:第9章 超音速噴流を用いた高速・大面積均一な微結晶シリコン製膜プロセス)サイエンス＆テクノロジー 2018年09月

MISC

受賞

  • 1986年 電気関係学会九州支部連合大会発表賞

共同研究・競争的資金等の研究課題

  • 超音速噴流を用いたＶＨＦプラズマによる高速大面積微結晶シリコン製膜法の開発
    科学研究費補助金
    研究期間 : 2013年04月 -2016年03月 
    代表者 : 牟田 浩司
  • 狭ギャップ高圧VHFプラズマを用いた微結晶シリコン薄膜作製
    科学研究費補助金
    研究期間 : 2008年04月 -2011年03月 
    代表者 : 牟田 浩司
  • 中性粒子風と渦の極性反転
    科学研究費補助金
    研究期間 : 2007年04月 -2010年03月 
    代表者 : 田中 雅慶
  • 低温プラズマ表面修飾技術による酸化チタン微粒子の環境浄化機能の改善に関する研究
    科学研究費補助金
    研究期間 : 2002年04月 -2003年03月 
    代表者 : 山田 憲二
  • ECRプラズマ中の電子速度分布関数と成膜の再現性に関する研究
    科学研究費補助金
    研究期間 : 1998年04月 -2000年03月 
    代表者 : 牟田 浩司

委員歴

  • 2002年   プラズマ・核融合学会   広報委員   プラズマ・核融合学会

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