KINDAI UNIVERSITY


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中田 俊司ナカタ シュンジ

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所属部署名工学部 電子情報工学科 / システム工学研究科
職名准教授
学位博士(工学)
専門高効率なエネルギー伝送回路
ジャンル科学・技術/新技術
コメンテータガイドhttp://www.kindai.ac.jp/meikan/418-nakata-shunji.html
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Last Updated :2017/11/18

コミュニケーション情報 byコメンテータガイド

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    キャパシタの充放電において、抵抗におけるジュール熱を発生させず、消費エネルギーをゼロとする回路を研究しています。大容量キャパシタやLSIへの応用を、実験により検討しています。

研究活動情報

論文

  • An adiabatic charging reversible circuit with stepwise voltage control method using a microprocessor, Shunji Nakata, Results in Physics, vol.7, pp.2976, 2978,   2017年
  • デューティ比デジタル制御法を用いたキャパシタ充電技術, 中田 俊司, 電気学会論文誌C, vol.137, no. 10,   2017年
  • An Adiabatic Circuit with Consecutive Changes of the Duty Ratio of the Switching Transistor Using a Microprocessor, Shunji Nakata, Masaki Ono, Masato Sakitani, Journal of Circuits, Systems, and Computers, vol.26, 1750007,   2017年
  • Energy Efficient Stepwise Charging of a Capacitor Using a DC-DC Converter With Consecutive Changes of its Duty Ratio, S. Nakata, H. Makino, J. Hosokawa, T. Yoshimura, S. Iwade, Y. Matsuda, IEEE Transactions on Circuits and Systems I, vol.61, pp.2194, 2203,   2014年
  • Analysis of voltage, current and energy dissipation of stepwise adiabatic charging of a capacitor using a nonresonant inductor current, S. Nakata, H. Makino, R. Honda, M. Miyama, and Y. Matsuda, Journal of Circuits, Systems, and Computers, vol.23, 1450039,   2014年
  • Increase in Read Noise Margin of Single-bit-line SRAM using Adiabatic Change of Word Line Voltage, Shunji Nakata, Hiroki Hanazono, Hiroshi Makino, Hiroki Morimura, Masayuki Miyama, and Yoshio Matsuda, IEEE Transactions on Very Large Scale Integration Systems, vol.22, pp.686, 690,   2014年
  • Improvement of Charge Trapping Characteristics of Al2O3/Al-rich Al2O3/SiO2 Stacked Films by Thermal Annealing, Shunji Nakata, Takashi Kato, Shinya Ozaki, Takeshi Kawae, and Akiharu Morimoto, Thin Solid Films, vol.542, pp.242, 245,   2013年
  • Utilizing the Normal Distribution of the Write Noise Margin to Easily Predict the SRAM Write Yield, Hiroshi Makino, Shunji Nakata, Hirotsugu Suzuki, Shin’ichiro Mutoh, Masayuki Miyama, Tsutomu Yoshimura, Shuhei Iwade and Yoshio Matsuda, IET Circuits, Devices and Systems, vol.6, pp.260, 270,   2012年
  • General Stability of Stepwise Waveform of an Adiabatic Charge Recycling Circuit with Any Circuit Topology, Shunji Nakata, Ryota Honda, Hiroshi Makino, Shin’ichiro Mutoh, Masayuki Miyama, and Yoshio Matsuda, IEEE Transactions on Circuits and Systems I, vol.59, pp.2301, 2314,   2012年
  • Charge Trapping Characteristics of Al2O3/Al-rich Al2O3/SiO2 Stacked Films Fabricated by Radio-Frequency Magnetron Co-Sputtering, Shunji Nakata, Ryoji Maeda, Takeshi Kawae, Akiharu Morimoto, and Tatsuo Shimizu, Thin Solid Films, vol.520, pp.1091, 1095,   2011年
  • Re-examination of SRAM Cell Write Margin Definitions in view of Predicting Distribution, Hiroshi Makino, Shunji Nakata, Hirotsugu Suzuki, Shin'ichiro Mutoh, Masayuki Miyama, Tsutomu Yoshimura, Shuhei Iwade and Yoshio Matsuda, IEEE Transactions on Circuits and Systems II, vol.58, pp.230, 234,   2011年
  • An adiabatic charging and discharging method with minimum energy dissipation for a variable-gap capacitor system, S. Nakata. M. Miyama, and Y. Matsuda, IET Circuits, Devices and Systems, vol.4, pp.301, 311,   2010年
  • Stable adiabatic circuit using advanced series capacitors and time variation of energy dissipation, Shunji Nakata, Shin'ichiro Mutoh, Hiroshi Makino, Masayuki Miyama, and Yoshio Matsuda, IEICE Electron. Express, vol.7, pp.640, 646,   2010年
  • Recent Progress in Adiabatic Circuits, Shunji Nakata, Recent Patents on Electrical Engineering, vol.2, pp.40, 44,   2009年
  • Etching rate, optical transmittance and charge trapping characteristics of Al-rich Al2O3 thin film fabricated by RF magnetron co-sputtering, Shunji Nakata, Shingo Nagai, Minoru Kumeda, Takeshi Kawae, Akiharu Morimoto, and Tatsuo Shimizu, Journal of Vacuum Science and Technology B, vol.26, pp.1373, 1378,   2008年
  • Adiabatic quasi 6T-SRAM with shared writing and reading ports,, Shunji Nakata, IEICE Electron. Express, vol.5, pp.163, 169,   2008年
  • Transport and Optical Characteristics of Al-rich AlO Film and its Application to a Nonvolatile Memory, Shunji Nakata, Shingo Nagai, Minoru Kumeda, Takeshi Kawae, Akiharu Morimoto, Yoshitada Katagiri, and Tatsuo Shimizu, Proceeding in MRS Volume, 1056E,   2007年
  • Stability of an adiabatic circuit with inductive load using 1D-capacitor array between the power supply and ground, Shunji Nakata, IEICE Electron. Express, vol.4, pp.485, 491,   2007年
  • Stability of adiabatic circuit using asymmetric 1D-capacitor array between the power supply and ground, Shunji Nakata, IEICE Electron. Express, vol.4, pp.165, 171,   2007年
  • Electrostatic energy, potential energy and energy dissipation for a width-variable capacitor system during adiabatic charging, Shunji Nakata, Yoshitada Katagiri and Shun-ichi Matsuno, J. Appl. Phys., vol.101, 034911,   2007年
  • Stability of adiabatic reversible charging using 1D-capacitor array between the power supply and ground, Shunji Nakata, IEICE Electron. Express, vol.4, pp.9, 14,   2007年
  • Electrostatic energy, potential energy and energy dissipation for a width-variable capacitor coupled with mechatronical potential energy during adiabatic charging, Shunji Nakata and Yoshitada Katagiri, IEICE Trans. Electron., vol. E90-C, pp.139, 144,   2007年
  • Adiabatic SRAM with the large margin of Vth variation by the gradual change of the voltage, Shunji Nakata, IEICE Electron. Express, vol.3, pp.304, 309,   2006年
  • Non-volatile Al2O3 memory using nanoscale Al-rich Al2O3 thin film as a charge storage layer, Shunji Nakata, Kunio Saito and Masaru Shimada, Jpn. J. Appl. Phys., vol.45, pp.3176, 3178,   2006年
  • Analysis of the stability of adiabatic reversible logic using the theory of normal modes in coupled oscillators, Shunji Nakata, IEICE Electron. Express, vol.3, pp.17, 22,   2006年
  • Nonvolatile memory using Al2O3 film with an embedded Al-rich layer, Shunji Nakata, Kunio Saito and Masaru Shimada, Appl. Phys. Lett., vol.87, 223110,   2005年
  • The stability of adiabatic reversible logic using asymmetric tank capacitors and its application to SRAM, Shunji Nakata, IEICE Electron. Express, vol.2, pp.512, 518,   2005年
  • Non-volatile Al2O3 memory using an Al-rich structure as a charge-storing layer, S. Nakata, K. Saito and M. Shimada, IEE Electronics Lett., vol.41, pp.721, 722,   2005年
  • Adiabatic Charging Reversible Logic using a Switched Capacitor Regenerator, Shunji Nakata, IEICE Trans. Electron., vol. E87-C, pp.1837, 1846,   2004年
  • A low power multiplier using adiabatic charging binary decision diagram circuit, Shunji Nakata, Takakuni Douseki, Yuichi Kado and Junzo Yamada, Jpn. J. Appl. Phys., vol.39, pp.2305, 2311,   2000年
  • Transition from weak to strong spin-orbit scattering regime in diffusive InGaAs/InAlAs quantum wires, Yoshino K. Fukai, Hayato Nakano, Shunji Nakata, Seigo Tarucha and Kunihiro Arai, Solid state communications, vol.94, pp.757, 761,   1995年
  • Effects of annealing using plasma-excited CVD SiN film as a cap on the mobility of AlGaAs/GaAs two-dimentional electron gas, Shunji Nakata, Masafumi Yamamoto and Takashi Mizutani, J. Appl. Phys., vol.78, pp.4401, 4406,   1995年
  • Electrical transport properties and confinement potential analysis of buried AlGaAs/GaAs quantum wires, Shunji Nakata, Masaaki Tomizawa, Masafumi Yamamoto, Kenji Ikuta and Takashi Mizutani, J. Appl. Phys., vol.76, pp.2330, 2335,   1994年
  • The dependence of boundary scattering in split-gate quantum wires on the transverse mode number, Masafumi Yamamoto, Shunji Nakata, Kimihisa Aihara and Takashi Mizutani, Solid-State Electronics, vol.32, pp.705, 707,   1994年
  • Transport properties of buried AlGaAs/GaAs quantum wires, Shunji Nakata, Kenji Ikuta, Masafumi Yamamoto and Takashi Mizutani, Jpn. J. Appl. Phys., vol.32, pp.6258, 6261,   1993年
  • Observation of Coulomb-blockade oscillations by the back gate with subattofarad mutual capacitance, Shunji Nakata, Phys. Rev., B47, pp.1679, 1682,   1993年
  • Observation of tunneling phenomena and the charging effect through small constricted regions in semiconductors fabricated with a focused ion beam at 4.2 K, Shunji Nakata, Phys. Rev., B46, pp.13326, 13330,   1992年
  • Transport characteristics of AlGaAs/GaAs wires fabricated by focused Ga-ion-beam implantation, Shunji Nakata, Yoshiro Hirayama, Seigo Tarucha and Yoshiji Horikoshi, J. Appl. Phys., vol.69, pp.3633, 3640,   1991年
  • Quantum Wires and One-and Zero-Dimensional Tunneling Diodes Fabricated by Focused Ion Beam Implantation, Seigo Tarucha, Yoshiro Hirayama, Tadashi Saku, Shunji Nakata and Yasuhiro Tokura, International Institute for Advanced Studies Symposium on Science and Technology of Mesoscopic Structures, pp.11, 12,   1991年
  • Fabrication of quantum wires by Ga Focused-Ion-Beam Implantation and their transport properties, Shunji Nakata, Shoji Yamada, Yoshiro Hirayama, Tadashi Saku and Yoshiji Horikoshi, Jpn. J. Appl. Phys, vol.29, pp.48, 52,   1990年