KINDAI UNIVERSITY


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MATSUTANI Takaomi

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FacultyDepartment of Electric and Electronic Engineering / Graduate School of Science and Engineering Research
PositionProfessor
Degree
Commentator Guidehttps://www.kindai.ac.jp/meikan/304-matsutani-takaomi.html
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Last Updated :2020/04/03

Education and Career

Academic & Professional Experience

  •   2007 ,  - 2011 , Faculty of Science and Engineering, Kindai University

Research Activities

Research Areas

  • Nanotechnology/Materials, Inorganic materials
  • Energy, Quantum beam science

Research Interests

  • CT

Published Papers

  • Effect of pulse parameter change on a-SiCN diaphragms for environmental cells fabricated by magnetic-field- and pulsed-plasma-enhanced chemical vapor deposition, Murano Masanori, Matsutani Takaomi, Kawasaki Tadahiro, VACUUM, VACUUM, 158, 60 - 64, Dec. 2018 , Refereed
  • Surface modification of triacetylcellulose by low-energy nitrogen ions for diaphragm of environmental cell transmission electron microscope, Matsutani Takaomi, Murano Masanori, Kawasaki Tadahiro, SURFACE & COATINGS TECHNOLOGY, SURFACE & COATINGS TECHNOLOGY, 344, 58 - 61, Jun. 25 2018 , Refereed
  • Development of Soft X-ray Photoelectron Cascade-Enhanced Coaxial Cylindrical Ionization Chamber for Ion Mobility Spectrometer, 松谷貴臣, プラズマ応用科学, プラズマ応用科学, 24(2), 89‐93, Dec. 2016
  • Development of electrostatic spherical aberration corrector using annular and circular electrodes, Kawasaki Tadahiro, Ishida Takafumi, Takai Yasuyuki, Ogawa Yuki, Tomita Masahiro, Matsutani Takaomi, Kodama Tetsuji, Ikuta Takashi, SURFACE AND INTERFACE ANALYSIS, SURFACE AND INTERFACE ANALYSIS, 48(11), 1160 - 1165, Nov. 2016 , Refereed
  • Wavelength and pulsewidth dependences of laser processing of CFRP, M. Fujita, M. Fujita, H. Ohkawa, T. Somekawa, M. Otsuka, Y. Maeda, T. Matsutani, N. Miyanaga, Physics Procedia, Physics Procedia, 83, 1031 - 1036, Jan. 01 2016
    Summary:© 2016 The Authors. As the use of CFRP material becomes widespread in various industries, achieving high-speed cutting with less pulse energy and minimal thermal damage is one of the important issues for laser-based processing. Among the various parameters in laser processing, we have focused on wavelength from UV (266 nm) to NIR (1064 nm) and pulsewidths from 100 fs to 20 ns in order to investigate cutting efficiency in terms of ablated mass per irradiated laser energy and corresponding heat affected zone (HAZ). Samples used in our experiments were uni-directional CFRPs with thickness from 140 μm to 250 μm or 1.3 mm-thick cross CFRPs. We measured time to cut the samples and ablated volume in order to estimate cutting efficiency in mg/kJ. Also we observed SEM images of the processed samples to evaluate HAZ. In general, shorter wavelength and shorter pulsewidth resulted in higher cutting efficiency and less thermal damages. These results could contribute to optimize the machining of CFRP composite materials.
  • Amorphous silicon carbonitride diaphragm for environmental-cell transmission electron microscope fabricated by low-energy ion beam induced chemical vapor deposition, Takaomi Matsutani, Kayo Yamasaki, Norihiro Imaeda, Tadahiro Kawasaki, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 365, 150 - 154, Dec. 15 2015
    Summary:© 2015 Elsevier B.V. An amorphous silicon carbonitride (a-SiCN) diaphragm for an environmental-cell transmission electron microscope (E-TEM) was fabricated by low-energy ion beam induced chemical vapor deposition (LEIBICVD) with hexamethyldisilazane (HMDSN). The films were prepared by using gaseous HMDSN and N2 + ions with energies ranging from 300 to 600 eV. The diaphragms were applied to Si (1 0 0) and a Cu grid with 100-μm-diameter holes. With increasing ion energy, these diaphragms became perfectly smooth surfaces (RMS = 0.43 nm at 600 eV), as confirmed by atomic force microscopy and TEM. The diaphragms were amorphous and transparent to 200 kV electrons, and no charge-up was observed. Fourier transform infrared spectra and X-ray photoelectron spectra revealed that the elimination of organic compounds and formation of Si-N and C-N bonds can be promoted in diaphragms by increasing the ion impact energy. The resistance to electron beams and reaction gases in the E-cell was improved when the diaphragm was formed with high ion energy.
  • Development of a-SiCN Diaphragm for Environmental Cell by Magnetic-Field Assisted Pulsed-Plasma-Enhanced Chemical Vapor Deposition Method, 村野正典, 山崎佳代, 松谷貴臣, 川崎忠寛, プラズマ応用科学, プラズマ応用科学, 23(2), 95‐101, Dec. 2015
  • Development of magnetic-field and pulsed-plasma-enhanced chemical vapor deposition method to fabricate amorphous silicon carbonitride diaphragm for environmental-cell transmission electron microscope, Kayo Yamasaki, Takaomi Matsutani, Norihiro Imaeda, Tadahiro Kawasaki, Vacuum, Vacuum, 122(PB), 332 - 336, Dec. 01 2015
    Summary:© 2015 Elsevier Ltd. All rights reserved. A magnetic-field and pulsed-plasma-enhanced chemical vapor deposition (MPECVD) was developed to fabricate amorphous silicon carbonitride (a-SiCN) diaphragm for environmental-cell transmission electron microscope (E-TEM). The films were prepared by using gaseous hexamethyldisilazane (HMDSN), N2 and Ar with pulse voltages varied between 300 V and 600 V. The deposition rate was increased by enhancement of magnetic-field in comparison with a conventional PECVD. The diaphragms were applied to Si (100) and a Cu grid with 100-μm-diameter holes. Fourier transform infrared spectra and X-ray photoelectron spectra revealed that an elimination of organic compounds and a formation of Si-N and C-N bonds in diaphragms can be promoted with increasing pulse voltage and N2 flow rate and decreasing ambient pressure. The diaphragms were amorphous and transparent at 200 kV electrons and no charge-up was observed by E-TEM. Durability to electron beams and reaction gases in the E-cell was improved when diaphragm was deposited with high pulse voltage.
  • Facile wet-chemical synthesis of differently shaped cuprous oxide particles and a thin film: Effect of catalyst morphology on the glucose sensing performance, C. Neetzel, C. Neetzel, C. Neetzel, F. Muench, T. Matsutani, T. Matsutani, J. C. Jaud, J. Broetz, T. Ohgai, W. Ensinger, Sensors and Actuators, B: Chemical, Sensors and Actuators, B: Chemical, 214, 189 - 196, Jul. 31 2015
    Summary:© 2015 Elsevier B.V. All rights reserved. Abstract In this work, different facile synthesis routes were developed to create cuprite-based catalyst systems for the amperometric detection of glucose, allowing us to evaluate the impact of important electrode fabrication parameters on the glucose sensing performance. Using homogenous precipitation routes based on a redox system, two differently shaped cuprite particles - skeletons and polyhedrons - could be obtained. Furthermore, a novel electroless deposition technique was introduced that does not require sensitization and activation pretreatments, allowing for the direct modification of the glassy carbon. This technique produced electrodes with dense thin film consisting of merged, octahedral cuprite crystals. Afterward, these materials were tested as potential catalysts for the electrochemical detection of glucose. While the catalyst powders obtained by precipitation required Nafion® to be attached to the electrode, the thin film synthesized using electroless plating could be realized with and without additive. Summarizing the results, it was found that Nafion® was not required to achieve glucose selectivities typically observed for cuprite catalysts. Also, the type of catalyst application (direct plating vs. ink drop coating) and the particle shape had a pronounced effect on the sensing performance. Compared to the thin film, the powder-type materials showed significantly increased electrochemical responses. The best overall performance was achieved with the polyhedral cuprite particles, resulting in a high sensitivity of 301 μA mmol-1 cm-2, a linear range up to 298 μmol L-1 and a limit of detection of 0.144 μmol L-1.
  • Phase reconstruction in annular bright-field scanning transmission electron microscopy., Ishida T, Kawasaki T, Tanji T, Kodama T, Matsutani T, Ogai K, Ikuta T, Microscopy (Oxford, England), Microscopy (Oxford, England), 64(2), 69 - 76, Apr. 2015 , Refereed
  • Time-dependent characteristic of negative feedback optical amplifier at bit rates 10-Gbit/s based on an optical triode, Yuki Harada, Mohamad, Syafiq Azmi, Siti Aisyah Azizan, Takaomi Matsutani, Yoshinobu Maeda, Proceedings of SPIE - The International Society for Optical Engineering, Proceedings of SPIE - The International Society for Optical Engineering, 9450, 1 - 94501, Jan. 01 2015 , Refereed
    Summary:© 2015 SPIE. We proposed and demonstrated an all-optical triode based on a tandem wavelength converter using cross-gain modulation (XGM) in semiconductor optical amplifiers (SOAs). Negative feedback optical amplification scheme, which has the key advantages of reducing bit error rate and waveform reshaping at the output, was employed in this optical triode. This scheme utilizes an input signal and a negative feedback signal (a signal with reverse intensity to the input) and they were fed together into the optical amplifier. Manipulating the intensity of negative feedback signal enabled the noise suppression effect to be optimized and the outputs recorded improvements in bit error rate (BER) and also undergone waveform reshaping shown by the eye-pattern. In negative feedback optical amplifier, the negative feedback signal and input signal were fed into the SOA. However, due to XGM mechanism, there is a setback in which both signals could not be simultaneously fed. Therefore, by using an optical delay, negative feedback timing was manipulated and we investigate timing characteristics of negative feedback optical amplifier with BER and eye-pattern waveforms at 10 Gb/s.
  • 環境電顕の進歩と応用 隔膜型環境セル電子顕微鏡によるナノ金触媒その場観察, KAWASAKI TADAHIRO, MURASE HIROKI, IMAEDA NORIHIRO, CUI ZIPENG, MIURA TAKUYA, MATSUTANI TAKAOMI, TANJI TAKAYOSHI, 顕微鏡, 顕微鏡, 49(2), 93 - 97, Aug. 30 2014
  • Fabrication of Ceria-yttria-stabilized Zirconia Coating by Gas Tunnel Type Plasma Spraying, SHIGEMURA JUMPEI, MATSUTANI TAKAOMI, NAKANO HITOSHI, KOBAYASHI AKIRA, プラズマ応用科学, プラズマ応用科学, 21(2), 141 - 145, Dec. 2013
  • Amorphous SiCN diaphragm for transmission electron microscope with environmental-cell fabricated by plasma-enhanced chemical vapor deposition, Takaomi Matsutani, Kayo Yamasaki, Hidenori Tsutsui, Takuya Miura, Tadahiro Kawasaki, Vacuum, Vacuum, 88, 83 - 87, Jan. 01 2013
    Summary:For use as a diaphragm in an environmental-cell transmission electron microscope (E-cell TEM) system, amorphous silicon carbon nitride (a-SiCN) films were applied to a Cu grid with 100-μm-diameter holes by plasma-enhanced chemical vapor deposition. The applied films were characterized by X-ray photoelectron spectroscopy and TEM and their capacity to resist pressure were measured. The films were amorphous and transparent at 200 kV and no charge-up was observed. The films had a resist pressure of about 100 kPa. Gold nanoparticles in the reaction gas could be observed in-situ by using the developed diaphragm in the E-cell TEM system. © 2012 Elsevier Ltd. All rights reserved.
  • Development of electron optical system using annular pupils for scanning transmission electron microscope by focused ion beam, Takaomi Matsutani, Tsuchika Yasumoto, Takeo Tanaka, Tadahiro Kawasaki, Mikio Ichihashi, Takashi Ikuta, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 272, 145 - 148, Feb. 01 2012
    Summary:Annular pupils for electron optics were produced using a focused ion beam (FIB), enabling an increase in the depth of focus and allowing for aberration-free imaging and separation of the amplitude and phase images in a scanning transmission electron microscope (STEM). Simulations demonstrate that an increased focal depth is advantageous for three-dimensional tomography in the STEM. For a 200 kV electron beam, the focal depth is increased to approximately 100 nm by using an annular pupil with inner and outer semi-angles of 29 and 30 mrad, respectively. Annular pupils were designed with various outer diameters of 40-120 μm and the inner diameter was designed at 80% of the outer diameter. A taper angle varying from 1° to 20° was applied to the slits of the annular pupils to suppress the influence of high-energy electron scattering. The fabricated annular pupils were inspected by scanning ion beam microscopy and scanning electron microscopy. These annular pupils were loaded into a STEM and no charge-up effects were observed in the scintillator projection images recorded by a CCD camera. © 2011 Elsevier B.V. All rights reserved.
  • Development of compact ion gun under atmospheric pressure X-rays, Nurul Hana, Hidenori Tsutsui, Takaomi Matsutani, Yoshinori Hosokawa, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 272, 342 - 345, Feb. 01 2012
    Summary:A highly efficient and highly stable compact ion gun (less than 10 × 10 × 5 cm) operable under atmospheric pressure was developed for environmental measurements and materials technology applications. Soft X-ray ionization was used as an ion source. In this work, soft X-rays were generated from a beryllium/titanium target irradiated by 9 keV thermal electrons. For a nitrogen assist gas flow rate of 500 ml/min and an acceleration voltage of 3.9 kV, the highest average ion current was 1.34 nA and a current stability of ±6% over 10 min was obtained. A high frequency electric field was applied to the electrode in the X-ray ionization chamber in order to enhance the ion current. The ion current increased by a factor of 1.6 compared to the current in the absence of the high frequency electric field. The ion gun developed here was employed to deposit a silicon carbonitride (SiCN) film on silicon and copper substrates by using nitrogen ions and hexamethyldisilane under atmospheric pressure conditions. The deposition of a hydrogenated SiCO and SiCN mixture film was confirmed using Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. © 2011 Elsevier B.V. All rights reserved.
  • Development of a-SiCN Diaphragm for Transmission Electron Microscope with Environmental Cell by Using Pulse Plasma Enhanced Chemical Vapor Deposition, MATSUTANI TAKAOMI, YAMASAKI KAYO, TSUTSUI HIDENORI, MIURA TAKUYA, KAWASAKI TADAHIRO, プラズマ応用科学, プラズマ応用科学, 19(2), 159 - 164, Dec. 2011
  • Development of parallel image detection system using annular pupils for scanning transmission electron microscope, Takaomi Matsutani, Masaki Taya, Masaki Taya, Takeo Tanaka, Yoshihide Kimura, Yoshizo Takai, Tadahiro Kawasaki, Mikio Ichihashi, Takashi Ikuta, AIP Conference Proceedings, AIP Conference Proceedings, 1282, 111 - 114, Dec. 13 2010
    Summary:A parallel image detection system using an annular pupil for electron optics were developed to realize an increase in the depth of focus, aberration-free imaging and separation of amplitude and phase images under scanning transmission electron microscopy (STEM). Apertures for annular pupils able to suppress high-energy electron scattering were developed using a focused ion beam (FIB) technique. The annular apertures were designed with outer diameter of φ 40 μm and inner diameter of φ 32 μm. A taper angle varying from 20° to 1° was applied to the slits of the annular apertures to suppress the influence of high-energy electron scattering. Each azimuth angle image on scintillator was detected by a multi-anode photomultiplier tube assembly through 40 optical fibers bundled in a ring shape. To focus the image appearing on the scintillator on optical fibers, an optical lens relay system attached with CCD camera was developed. The system enables the taking of 40 images simultaneously from different scattered directions. © 2010 American Institute of Physics.
  • Development of B-C-N-O diaphragm for environmental cell transmission electron microscope by plasma enhanced chemical vapor deposition, Hidenori Tsutsui, Takaomi Matsutani, Tadahiro Kawasaki, AIP Conference Proceedings, AIP Conference Proceedings, 1282, 39 - 43, Dec. 13 2010
    Summary:For use as a diaphragm in the environmental cell (E-cell), boron oxide and boron carbon oxynitride films were successfully applied to a Cu mesh with φ73 μm holes using plasma enhanced chemical vapor deposition (PECVD). First, the holes of the Cu mesh were filled with triacetyl cellulose (TAC) solution to prepare for deposition of the boron oxide film, which was performed by PECVD using precursors of trimethyl borate (B(OCH 3) 3) and oxygen (O 2) or nitrogen (N 2). Finally, the TAC film was etched onto the Cu mesh with acetone. The applied films were characterized by X-ray photoelectron spectroscopy and transmission electron microscopy at 200 kV. The films were amorphous and transparent in the 200 kV electron examination and no charge-up phenomenon was observed. © 2010 American Institute of Physics.
  • Simulation of a hollow cone-shaped probe in aberration-corrected STEM for high-resolution tomography, Tadahiro Kawasaki, Takaomi Matsutani, Takashi Ikuta, Mikio Ichihashi, Takayoshi Tanji, Ultramicroscopy, Ultramicroscopy, 110(10), 1332 - 1337, Sep. 01 2010
    Summary:In a simulation study, we found that focal depth extension using a hollow cone-shaped probe with an annular aperture is useful for three-dimension (3D) tomography of aberration-corrected scanning transmission electron microscopy (STEM). Our calculations showed that, for 200 kV STEM, a sub-angstrom sized probe could extend the focal depth from a few to more than several tens nm. We also examined the influence of obstructing bridges, including actual fabricated annular apertures, on focused probe intensity distribution. We found that, to avoid any distortion of probe intensity, the width of the bridges should be narrow. Quantitative evaluation showed that the ratio of obstructing area of the bridges to the area of the annular slit should be less than 0.11. © 2010 Elsevier B.V.
  • Evaluation of annular pupil for scanning transmission electron microscope formed by focused ion beam technique, Takaomi Matsutani, Masaki Taya, Masaki Taya, Takashi Ikuta, Tetsuya Fujimura, Hirohiko Inui, Takeo Tanaka, Ippei Shimizu, Yoshihide Kimura, Yoshizo Takai, Tadahiro Kawasaki, Mikio Ichihashi, Vacuum, Vacuum, 83(1), 201 - 204, Sep. 04 2008
    Summary:Annular pupils for electron optics were developed using a focused ion beam (FIB) technique to realize an increase in the depth of focus, aberration-free imaging and separation of amplitude and phase images under scanning transmission electron microscopy (STEM). A tantalum plate 30 μm thick was used as the annular pupil material in the present experiment. The annular pupils were designed with various outer diameters from φ{symbol}120 μm to φ{symbol}40 μm. The inner diameter was designed at 60 to 80% of the outer diameter. The fabricated annular pupils were inspected by scanning ion beam microscopy and scanning electron microscopy. Annular pupils were successfully obtained at the designed size, although the slits of the pupils were slightly tapered by the ion beam etching process. These annular pupils were loaded on a STEM and confirmed to display no charge-up phenomenon by observation of the projection image on a scintillator using a CCD camera. We confirmed the image taken by annular pupil with narrow width was able to suppress the influence of the normal illumination. © 2008 Elsevier Ltd. All rights reserved.
  • Development of micro-aperture for annular pupil on electron optics by focused ion beam technique, Makoto Fujiwara, Takeo Tanaka, Ippei Shimizu, Takaomi Matsutani, Masaki Hisaka, Tsuneo Yasue, Takashi Ikuta, Masaki Taya, Yoshihide Kimura, Yoshizo Takai, Tadahiro Kawasaki, Mikio Ichihashi, Shinku/Journal of the Vacuum Society of Japan, Shinku/Journal of the Vacuum Society of Japan, 50(10), 639 - 643, Dec. 01 2007
    Summary:Micro-apertures for annular pupil on electron optics have been developed using a focused ion beam technique to realize an increase in the depth of focus, aberration-free imaging and separation of amplitude and phase images under scanning transmission electron microscopy (STEM). A tantalum plate 30μm thick was used as the annular pupil material in the present experiment. The apertures were designed with various outer diameters from Φ120μm to Φ60 μm and at inner diameter of 80% outer diameter. Fabricated apertures were characterized by a scanning ion-beam microscope and a scanning electron microscope. Apertures were successfully obtained at the designed size, although the slits of the pupils were slightly tapered by the ion-beam etching process. These annular pupils were loaded on a STEM and confirmed to display no charge-up phenomenon by observation of the projection image on a scintillator using a CCD camera.
  • Development of a parallel detection and processing system using a multidetector array for wave field restoration in scanning transmission electron microscopy., Taya M, Matsutani T, Ikuta T, Saito H, Ogai K, Harada Y, Tanaka T, Takai Y, The Review of scientific instruments, The Review of scientific instruments, 78(8), 83705, Aug. 2007 , Refereed
  • Preparation of Ge-C films by low-energy ion beam induced chemical vapor deposition with hexamethyldigermane, Takaomi Matsutani, Takaomi Matsutani, Masato Kiuchi, Takae Takeuchi, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 257, 261 - 264, Apr. 01 2007
    Summary:High carbon content Ge-C films were formed on (1 0 0) silicon by low-energy ion beam induced chemical vapor deposition (IBICVD) using Ar+ ion energies of 20-300 eV and gaseous hexamethyldigermane [HMDG: (CH3)3GeGe(CH3)3]. Chemical structures were characterized by Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS), and IR-absorption peaks were assigned by ab initio molecular orbital calculations. While films with Ge-CH3 bonds were successfully deposited at ion beam energies of less than 200 eV, no film formation was observed at 200 eV or higher. The Ge:C atomic ratio was 0.25 as measured by XPS. In the case of a film deposited at a substrate temperature of 573 K, change in chemical structure with enhancement of hydrogen elimination was confirmed by FT-IR. Although most Ge atoms in the films bonded with C atoms, results suggest some carbon in the film constituted C-C bonds as in a graphitic phase. © 2007 Elsevier B.V. All rights reserved.
  • Mass spectrometric and theoretical studies on the fragmentation mechanism of protonated molecules and molecular radical cations of organometallic compounds with Si-C, Si-Si, Ge-C and Ge-Ge bonds, Takae Takeuchi, Takae Takeuchi, Yuko Shirai, Yuriko Matsumura, Kaoru Iwai, Takaomi Matsutani, Joji Oshita, Akinobu Naka, Surface and Interface Analysis, Surface and Interface Analysis, 38(12-13), 1650 - 1653, Dec. 01 2006
    Summary:Protonated hexamethyldigermane [HMDG]H+ and protonated hexamethyldisilane [HMDS]H+ were generated in the gas phase by nanoelectrospray ionization (nano-ESI) and atmospheric pressure chemical ionization (APCI). The fragmentation mechanisms of [HMDG]H+ and [HMDS]H+ were investigated by analyzing the collision-induced dissociation (CID). In CID spectra of [HMDG]H+, the fragment ions due to a CH4 elimination from the protonated hexamethyldigermane were observed. The potential energy curves were calculated using the ab initio method (B3LYP/6-31G(2df,p)). The calculated optimal geometries of [HMDG]H+ and [HMDS]H+ were the proton-bound structures and the ion-neutral complexes. The results of ab initio calculations showed that C2H 4 elimination occurred more easily than C2H4 elimination in both (CH3)3Ge+ and (CH 3)3Si+. This was consistent with the experimental results of the CID spectrum of (CH3)3Si +. Copyright © 2006 John Wiley & Sons, Ltd.
  • Tin oxide thin films prepared by ion beam induced chemical vapor deposition, Yuka Fujikawa, Masato Kiuchi, Takaomi Matsutani, Takaomi Matsutani, Takae Takeuchi, Takae Takeuchi, Shinku/Journal of the Vacuum Society of Japan, Shinku/Journal of the Vacuum Society of Japan, 49(12), 780 - 781, Dec. 01 2006
    Summary:We deposited transparent and electrical conductive thin films on polymer substrates ZEONOR® (cycloolefin) by oxygen ion beam induced chemical vapor deposition (IBICVD) with tetramethylstannane (TMS). The film depositions were carried out the acceleration voltage of oxygen ion beam in range from 50 to 300 eV. The deposition time was fixed at 180 minutes at all conditions. Under irradiation of 300 eV oxygen ions, the optical transmittance at 550 nm and the resistivity of the prepared film were 80% and 5.4 × 10-2 Ω·cm, respectively. When oxygen ion energy increased from 50 to 300 eV, root mean square of roughness and contamination of carbon were decreased.
  • Sealing performance of thin amorphous carbon films formed by ion beam assisted deposition at low temperature for protection of aluminium against aggressive media: The influence of the ion energy, J. Von Ringleben, Ch Sundermann, T. Matsutani, M. Kiuchi, W. Ensinger, W. Ensinger, W. Ensinger, Thin Solid Films, Thin Solid Films, 482(1-2), 115 - 119, Jun. 22 2005
    Summary:Thin films of amorphous carbon (a-C) are well known for their low intrinsic microporosity. Being stable against aqueous media, they can be used for sealing metals against aggressive wet environment. Such a metal is aluminum. Its main advantage is its low weight at a comparatively high strength. Its disadvantages are its poor tribological features and its susceptibility to pitting corrosion. a-C films are very suitable for handling this problem. However, for some of the aluminium alloys the coating process temperature has to be kept low (<150 °C) in order to avoid detrimental structural changes. Such low process temperatures can be maintained when ion beam techniques are applied. Ion beam assisted deposition (IBAD) has been used to deposit a-C films on aluminium by electron beam evaporation of graphite under concurrent argon ion beam irradiation at room temperature. The sealing properties and microporosity of the films in chloride-containing water were examined by electrochemical polarization techniques. The results show that a-C films can effectively improve the corrosion performance when appropriate deposition process conditions are used. An increase in film thickness and in ion energy leads to a reduction in corrosion. © 2004 Elsevier B.V. All rights reserved.
  • Corrosion performance of thin amorphous carbon films on aluminum formed by ion beam-based coating techniques, W. Ensinger, O. Lensch, T. Matsutani, M. Kiuchi, Surface and Coatings Technology, Surface and Coatings Technology, 196(1/3), 231 - 235, Jun. 22 2005
    Summary:Thin amorphous carbon films were deposited onto aluminum samples at ambient temperature by ion beam-assisted evaporation and by ion beam sputter deposition. Their corrosion protection effect in sodium chloride solution where aluminum suffers from pitting corrosion was tested by means of electrochemical polarization measurements. The results showed that in case of ion beam-assisted deposition at a given ion irradiation intensity, the corrosion protection effect is strongly influenced by the deposition rate. There exists an optimal rate corresponding to a certain ratio of deposited atoms to impinging ions. In case of ion beam sputter deposition, it turned out that lower energies and lower currents of the sputtering ions were more favourable for corrosion protection. A comparison of the results of both techniques shows that under the present experimental conditions with sputter deposited films, a better corrosion protection performance could be achieved than with those formed by evaporation under ion assist. © 2004 Elsevier B.V. All rights reserved.
  • Mass spectrometric and theoretical studies on the fragmentation mechanisms of hexamethyldigermane and hexamethyldisilane ions in the gas phase, Takae Takeuchi, Yuko Shirai, Takaomi Matsutani, Masato Kiuchi, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 232(1-4), 217 - 222, May 01 2005
    Summary:Fragmentation mechanisms of hexamethyldigermane and hexamethyldisilane ions have been investigated using the collision-induced dissociation-mass spectrometry/mass spectrometry (CID-MS/MS) and ab initio MO calculations. The results of CID-MS/MS spectra showed that the [(CH3) 3GeGe(CH3)3]+ ion was fragmented to be (CH3)3Ge+, followed by the secondary fragmentation generating CH3Ge+. The results of ab initio calculations showed that a C2H4 elimination occurred more easily than a C2H6 elimination from (CH3) 3Ge+ in the low energy region. © 2005 Elsevier B.V. All rights reserved.
  • Formation of aluminum nitride film for high power soft X-ray source using ion-beam assisted deposition method, Takaomi Matsutani, Masato Kiuchi, Kiyotaka Shirouzu, Akihiro Yoshioka, Ryuichi Shimizu, Sadayuki Takahashi, Solid State Phenomena, Solid State Phenomena, 107, 43 - 46, Jan. 01 2005
    Summary:An aluminum nitride (AlN) target for Al-Kα X-ray source with high power and long service life has been developed by N2 + ions assisted Al vapor deposition method (IBAD). The AlN film formations were carried out at the Al deposition rate varied from 2.0 nm/s to 0.15 nm/s with a fixed low-energy N2 + ion of 1 keV. The films were deposited on Cu substrate at room temperature. The AlN films were characterized by an X-ray diffraction, an electron probe X-ray microanalysis and a Knoop-hardness measurement. The AlN deposited at the Al deposition rate of 0.5 nm has a N/Al ratio of 0.4, a Knoop-hardness of ∼ 1500 and a low resistance of ∼0.2 Ω. Comparison of durability test between the AlN target and a conventional Al target was performed. It has been revealed, after 500 hours under an electron bombardment of 300 mA at 20 kV, that there were no change of morphology and X-ray intensity on the AlN-surface whilst cracks due to the heat-cycle fatigue covered the Al-surface. © 2005 Trans Tech Publications, Switzerland.
  • Development of high power soft x-ray source-AlN/Cu target, Takaomi Matsutani, Masato Kiuchi, Kiyotaka Shirouzu, Ryuichi Shimizu, Sadayuki Takahashi, Shinku/Journal of the Vacuum Society of Japan, Shinku/Journal of the Vacuum Society of Japan, 47(11), 802 - 805, Dec. 01 2004
    Summary:An AlN target for Al-Kα x-ray source with high power and long service life has been developed by means of N 2 + ions assisted Al vapor deposition method. Ambient temperature formations of AlN on a Cu cold-anode were carried out at Al deposition rate varied from 2.0 nm/s to 0.15 nm/s with fixed low-energy N 2 + ion of 1 keV. The AlN films were characterized by an x-ray diffraction, an x-ray fluorescence and a Knoop-hardness measurement. The AlN deposited at Al deposition rate of 0.5 nm has N/Al ratio of 0.45, Knoop-hardncss of ∼1500 and low electric resistance of ∼0.2 Ω. Comparison of durability test with the AlN target and a conventional Al target was performed by bombarding the targets with 40 keV electrons. It was found that a maximum electron input power of the test increased five times higher than that of Al/Cu target in conventional using model.
  • Structural and optical properties of titanium dioxide films deposited by reactive magnetron sputtering in pure oxygen plasma, T. Asanuma, T. Matsutani, C. Liu, T. Mihara, M. Kiuchi, Journal of Applied Physics, Journal of Applied Physics, 95(11,Pt.1), 6011 - 6016, Jun. 01 2004
    Summary:The deposition of titanium dioxide (TiO2) thin films on unheated quartz (SiO2) substrates in "pure oxygen" plasma by reactive radio-frequency (rf) magnetron sputtering was investigated. At a total sputtering pressure ptot of 1.3 Pa no diffraction peak was observed. The composition, density, and kinetic energy of the particles impinging on the substrate surface effected the nucleation and growth of TiO2 films. The change in the shape of the fundamental absorption edge was found to reflect the variation of density and the short-range structural modifications.
  • Brillouin scattering study on the wave properties in thin SiC films., Matsukawa M, Murata S, Matsumoto T, Matsutani T, Kiuchi M, Ultrasonics, Ultrasonics, 42(1-9), 391 - 394, Apr. 2004 , Refereed
  • Organosilicon ion beam for SiC heteroepitaxy, Masato Kiuchi, Takaomi Matsutani, Takae Takeuchi, Takashi Matsumoto, Satoshi Sugimoto, Seiichi Goto, Surface and Coatings Technology, Surface and Coatings Technology, 177/178, 260 - 263, Jan. 30 2004
    Summary:A low-energy deposition technique using a beam of organosilicon ions has been developed and successfully applied for heteroepitaxial growth of SiC on a Si substrate at temperatures of 900-1300 K. The process employs gaseous CH3SiH2 CH3 in a Freeman-type ion source to produce CH3Si+ fragment ions that are then mass-selected and deposited at 100 eV on a Si wafer. Ion energy was precisely controlled and energy fluctuation was ±1 eV. RHEED analysis and AFM observation, respectively, showed that a thin film of SiC had been crystallized heteroepitaxially and in the form of 'nano-tiles.' The technique offers the potential for fabrication of self-assembled SiC nanostructures. © 2003 Elsevier B.V. All rights reserved.
  • Deposition of SiO2 films by low-energy ion-beam induced chemical vapor deposition using hexamethyldisiloxane, Takaomi Matsutani, Tatsuya Asanuma, Chang Liu, Masato Kiuchi, Takae Takeuchi, Surface and Coatings Technology, Surface and Coatings Technology, 177/178, 365 - 368, Jan. 30 2004
    Summary:Room-temperature preparation of silicon dioxide films with smooth surfaces and small carbon was achieved by low-energy ion beam induced chemical vapor deposition (IBICVD) with a bubbling system for hexamethyldisiloxane (HMDSO). When prepared using bubbled HMDSO and assisted O2 gas under irradiation of 150 eV Ar ions, the film contained carbon of 0.2% and the root mean square of the surface roughness of the film was 2.0 nm. However, when prepared using the bubbled HMDSO under irradiation of 150 eV oxygen ions, the film contained carbon less than 0.1%, and the surface roughness was 0.25 nm. It is considered that low-energy oxygen ion bombardment promotes not only chemical reaction and dissociation of HMDSO but also reactive ion beam etching on the film surface. © 2003 Elsevier B.V. All rights reserved.
  • Ion beam-induced chemical vapor deposition with hexamethyldisilane for hydrogenated amorphous silicon carbide and silicon carbonitride films, Takaomi Matsutani, Tatsuya Asanuma, Chang Liu, Masato Kiuchi, Takae Takeuchi, Surface and Coatings Technology, Surface and Coatings Technology, 169/170, 624 - 627, Jun. 02 2003
    Summary:We report on the preparation of hydrogenated amorphous silicon carbide (a-SiC:H) film and silicon carbonitride (a-SiCN:H) film on Si (100) substrate by Ar ion beam-induced chemical vapor deposition (IBICVD) method attached with a bubbling system of hexamethyldisilane (HMDS). Ar ions and HMDS precursor with carrier gases of Ar or N2 were introduced onto the substrate at room temperature. Fourier transform infrared (FT-IR) spectra revealed that an elimination of an organic compound and the formation of Si-C, Si-N and C-N bonds can be promoted by increasing ion impact energy. Smooth surface with a lower roughness has been achieved when Ar ion energy increases from 50 to 300 eV. © 2003 Elsevier Science B.V. All rights reserved.
  • Hydroxyapatite coatings using novel pulsed laser ablation methods, Surface and Coatings Technology, Surface and Coatings Technology, 169, 712 - 715, Jun. 2003
  • Preparation and characterization of indium tin oxide films formed by oxygen ion beam assisted deposition, C. Liu, C. Liu, C. Liu, T. Mihara, T. Matsutani, T. Asanuma, M. Kiuchi, Solid State Communications, Solid State Communications, 126(9), 509 - 513, May 01 2003
    Summary:Indium tin oxide (ITO) films were produced by low-energy oxygen ion beam assisted electron-beam evaporation. The dependence of surface morphology, electrical and optical properties on evaporation rate, oxygen ion beam energy and density, as well as substrate temperatures was characterized by atomic force microscopy, X-ray photoelectron spectroscopy, Hall-effect and optical transmittance measurements. The results show that high-quality ITO films (resistivity of 7.0 × 10-4Ωcm, optical transmittance above 85% at wavelength 550 nm, surface roughness of 0.6 nm in root mean square) can be obtained at room temperature. © 2003 Elsevier Science Ltd. All rights reserved.
  • Structural, electrical and optical properties of indium tin oxide films prepared by low-energy oxygen-ion-beam assisted deposition, C. Liu, C. Liu, T. Matsutani, T. Asanuma, M. Kiuchi, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 348 - 352, May 01 2003
    Summary:Indium tin oxide (ITO) films were deposited onto fused silica (SiO2) and microslide glass by concurrent electron-beam evaporation of ITO bulk materials and low-energy oxygen-ion-beam bombardment. The oxygen ions were produced using an electron cyclotron resonance source. The acceleration voltage was varied between 50 and 500 V and the current densities were between 20 and 100 μA/cm2. The growth rate changed from 0.04 to 0.24 nm/s. Deposition of ITO films was carried out at room temperature and 200 °C. The structural, electrical and optical properties were characterized by X-ray diffraction, atomic force microscopy, Hall-effect and optical transmission measurements. The results show that very smooth and crystalline ITO films with high conductivity and transparency can be achieved. © 2003 Elsevier Science B.V. All rights reserved.
  • Argon versus nitrogen ion beam assisted deposition of amorphous carbon and carbon-nitrogen films on aluminum for protection against aqueous corrosion, W. Ensinger, W. Ensinger, O. Lensch, F. Sittner, F. Sittner, J. Knecht, K. Volz, K. Volz, T. Matsutani, M. Kiuchi, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 334 - 338, May 01 2003
    Summary:Ion beam assisted deposition has been used to deposit amorphous C and CNx films on aluminum at room temperature by electron beam evaporation of graphite under concurrent ion beam irradiation with two different ions, argon and nitrogen. The corrosion properties of the films in chloride-containing water were examined by electrochemical polarization techniques. The results show that argon ion bombardment is more effective than nitrogen ion bombardment. The aluminum dissolution currents are higher when nitrogen ions are used in comparison to argon ions. Apparently, interface mixing which leads to a heterogeneous ternary Al-C-N phase is detrimental to the corrosion protection effect of the thin film. © 2003 Elsevier Science B.V. All rights reserved.
  • Comparison of surface morphologies of SiO2 films prepared by ion-beam induced chemical vapor deposition and ion-beam assisted deposition, T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi, T. Takeuchi, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 343 - 347, May 01 2003
    Summary:The surface topographies of silicon dioxide films prepared by low-energy ion-beam induced chemical vapor deposition (IBICVD) and ion-beam assisted deposition (IBAD) were studied using an atomic force microscopy (AFM). In the case of IBICVD, when prepared using bubbled hexamethyldisiloxane (HMDSO) and assisted O2 gas under irradiation of 150 eV Ar ions, the root mean square (RMS) of the surface roughness of the film was 2.0 nm. However, when prepared using the bubbled HMDSO under irradiation of 150 eV oxygen ions, the RMS deduced to 0.25 nm. In the case of IBAD, when deposited using evaporated silicon monoxide under irradiation of 150 eV oxygen ions, the RMS was 0.20 nm. As a reference, the RMS of fused silica was changed from original 0.70-0.40 nm after irradiated of 150 eV oxygen ions. It is concluded that low-energy oxygen ion bombardment not only promotes chemical reaction and dissociation of precursor but also leads to a smooth surface due to reactive ion beam etching on the film surface. © 2003 Elsevier Science B.V. All rights reserved.
  • Room-temperature growth of crystalline indium tin oxide films on glass using low-energy oxygen-ion-beam assisted deposition, C. Liu, C. Liu, T. Matsutani, T. Asanuma, K. Murai, M. Kiuchi, E. Alves, M. Reis, Journal of Applied Physics, Journal of Applied Physics, 93(4), 2262 - 2266, Feb. 15 2003
    Summary:Indium tin oxide (ITO) films were prepared on glass by low-energy oxygen-ion-beam assisted deposition. An electron beam was used to evaporate the ITO bulk material. Simultaneously, a reactive oxygen ion beam produced by an electron cyclotron resonance (ECR) source was used to irradiate the growing film. The structural, electrical and optical properties of the films were studied by x-ray diffraction (XRD), Rutherford backscattering (RBS), atomic force microscopy (AFM), Hall-effect and optical transmission measurements.
  • Ionization of hexamethyldisilane for SiC deposition, Takae Takeuchi, Motoko Tanaka, Takaomi Matsutani, Masato Kiuchi, Surface and Coatings Technology, Surface and Coatings Technology, 158, 408 - 411, Oct. 30 2002
    Summary:We developed the SiC deposition technique by using ion beam induced deposition. In this technique, hexamethyldisilane was excited through impact with Ar ions and fragmented ions were deposited on the substrate. In this work the fragmentation mechanism of hexamethyldisilane is studied using Mass Spectrometry. To discuss the effect of excitation energy, hexamethyldisilane was excited by impact with electrons. With an impact of electrons in an energy range 10-70 e V, two types of fragmentation, namely, the Si-Si bond dissociation and the methyl radical loss, were observed. The formation of these fragment ions, most probably trimethylsilyl cations, contributed to SiC deposition. © 2002 Elsevier Science B.V. All rights reserved.
  • Pitting corrosion of aluminum coated by ion beam assisted deposition of carbon with argon ions at different ion-to-atom arrival ratios, W. Ensinger, W. Ensinger, O. Lensch, O. Lensch, J. Knecht, K. Volz, K. Volz, T. Matsutani, M. Kiuchi, Surface and Coatings Technology, Surface and Coatings Technology, 158, 594 - 598, Oct. 30 2002
    Summary:Aluminum and aluminum alloys have become increasingly important due to their low density and good corrosion properties, which arise from the dense oxide film that natural aluminum forms in contact with air. However, the passivity of aluminum and aluminum alloys fails when exposed to a wet environment in the presence of aggressive anions, such as chloride, when pitting corrosion occurs. To improve the overall corrosion resistance, aluminum was coated with amorphous carbon films at low temperature. The carbon films were formed by ion beam-assisted deposition under concurrent bombardment with argon ions. The corrosion behavior was evaluated by electrochemical polarization measurements carried out in neutral aqueous solutions containing sodium chloride. The results show that the films are able to considerably improve the corrosion resistance when a certain ion/ atom arrival ratio is chosen. © 2002 Elsevier Science B.V. All rights reserved.
  • High-quality indium tin oxide films prepared at room temperature by oxygen ion beam assisted deposition, C. Liu, C. Liu, T. Matsutani, N. Yamamoto, M. Kiuchi, Europhysics Letters, Europhysics Letters, 59(4), 606 - 611, Aug. 01 2002
    Summary:One of the key problems to develop organic electroluminescence devices is related to the fabrication of very smooth, high-quality ITO layers at room temperature. It is very promising to incorporate the reactive irradiation of low-energy oxygen ions produced from an ECR source into the deposition of ITO film by electron-beam evaporation in vacuum. The influences of growth rate and film thickness on the structural, electrical and optical properties were characterized by X-ray diffraction, atomic-force microscopy, Hall effect and optical transmittance measurements. A very smooth surface of only 0.6 nm roughness (rms), almost one order of magnitude smaller than those obtained using other preparation methods, low resistivity of 7.0 × 10-4 Ω cm, high optical transmittance of 85% at wavelength 550 nm (including SiO2 substrate) have been achieved at room temperature. Crystalline structure, which depends only on the thickness of the deposited ITO films, could be easily obtained at room temperature.
  • Lattice location and annealing behavior of Mn implanted GaN, C. Liu, E. Alves, A. R. Ramos, M. F. Da Silva, J. C. Soares, T. Matsutani, M. Kiuchi, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 191, 544 - 548, May 01 2002
    Summary:Gallium nitride (GaN) is a direct wide-band-gap semiconductor material, which can be used to produce blue-light-emitting diodes and lasers, high-temperature and high-power devices. While manganese (Mn) represents a potential acceptor in GaN, Mn-doped GaN may form an interesting diluted magnetic semiconductor. In this study, GaN was implanted at room temperature using 180 keV Mn+ ions to fluences ranging from 5 × 1015 to 3 × 1016 cm-2. Subsequent annealing was performed in a flowing N2 ambient, at 1050 °C for 12 min. The damage buildup and removal, as well as the lattice site location of Mn in GaN was studied by using Rutherford backscattering/channeling combined with particle induced X-ray emission. The angular scans around the 〈 0001 〉 and 〈 101̄1 〉 axial directions indicate that Mn mainly occupies substitutional Ga sites. During the thermal treatment, no significant redistribution of the implanted Mn ions was found. © 2002 Elsevier Science B.V. All rights reserved.
  • イオンビーム誘起CVDによる有機ケイ素を用いたアモルファス炭化ケイ素薄膜の作製, MATSUTANI TAKAOMI, ASANUMA TATSUYA, LIU C, KIUCHI MASATO, TAKEUCHI TAKAE, 表面技術, 表面技術, 52(12), 891 - 892, Dec. 01 2001
  • Flattening of surface by sputter-etching with low-energy ions, T. Matsutani, K. Iwamoto, T. Nagatomi, Y. Kimura, Y. Takai, Japanese Journal of Applied Physics, Part 2: Letters, Japanese Journal of Applied Physics, Part 2: Letters, 40(5A), 481 - 483, May 01 2001
    Summary:The thickness of the damaged layer on a GaAs surface induced by a focused 25 kV Ga+ ion beam (FIB) was reduced from ∼ 24 nm to ∼ 2.6 nm by finishing with low-energy Ar+ ions of 200 eV, which has been evaluated by cross-sectional observation under a transmission electron microscope (TEM). The finishing rendered the surface of the damaged layer significantly flatter. This flattening was found to be sensitive to the ion energy; a very smooth flat surface is obtained by sputter-etching with 200 eV Ar+ ions, whilst sputter-etching with 100 eV Ar+ ions causes GaAs particles to remain in the FIB-induced damage layer on the surface, and thus it is not flat.
  • Floating-type compact low-energy ion gun - basic performance for high-resolution depth profiling, Takaomi Matsutani, Keigo Iwamoto, Takaharu Nagatomi, Yoshihide Kimura, Yoshizo Takai, Ryuichi Shimizu, Ryuzo Aihara, Yoshizo Sakuma, Shinku/Journal of the Vacuum Society of Japan, Shinku/Journal of the Vacuum Society of Japan, 43(12), 1126 - 1128, Dec. 01 2000
    Summary:A floating-type low-energy ion gun (FLIG) producing 100 approx. 500 eV ions at a high current intensity has been developed. This ion gun consists of a permanent magnet-aided electron impact-type ionization cell, an extractor, and a cylindrical retarding immersion lens. The gun was assessed and produced typical performance levels of current intensities of 1.81 μA (current density of 7.9 μA/cm2) for 100 eV. The entire system has been compactly constructed with an ionization cell that has an outer diameter of less than 3.3 cm and a lens system that has a length of 24 cm. Conventional surface analytical instruments are attached via an ICF 70 Conflat flange.
  • Deposition of 3C-SiC films using ECR plasma of methylsilane, Takaomi Matsutani, Masato Kiuchi, Takae Takeuchi, Takashi Matsumoto, Kazuhiko Mimoto, Seiichi Goto, Vacuum, Vacuum, 59(1), 152 - 158, Oct. 01 2000
    Summary:We deposited silicon carbide (SiC) films formation using electron cyclotron resonance (ECR) plasma of methylsilane (SiH3 CH3), and investigated the influence of a carrier gas (Ar or Xe). The SiC film deposition on Si (1 0 0) was carried out at a relatively low temperature of 750 °C. By using ECR plasma with a carrier gas, Si-H bonds were not contained in the deposited films. Although surface morphology was very smooth in the case of using Ar carrier gas, crystallinity of the film was poor. This indicated that the film was eroded by carrier gas because surface morphologies were changed with different momentum values of ion.

Misc

  • 磁場‐パルスプラズマ援用化学気相成長法におけるパルスパラメータ変化がHMDSNの窒化に及ぼす影響, 村野正典, 松谷貴臣, 川崎忠寛, 電気関係学会関西連合大会講演論文集(CD-ROM), 2017, ROMBUNNO.P‐15,   2017 11 06 , http://jglobal.jst.go.jp/public/201702240119754490
  • Cu2Oナノワイヤを用いた電界放出型電子源の開発, 徳重有哉, 野村真一郎, 村野正典, 松谷貴臣, 電気関係学会関西連合大会講演論文集(CD-ROM), 2017, ROMBUNNO.G6‐15,   2017 11 06 , http://jglobal.jst.go.jp/public/201702258837433058
  • 環境セル用隔膜作製のための低エネルギーN2+イオンビームによるトリアセチルセルロースの表面改質, 八幡大地, 水口卓也, 村野正典, 松谷貴臣, 電気関係学会関西連合大会講演論文集(CD-ROM), 2017, ROMBUNNO.G6‐6,   2017 11 06 , http://jglobal.jst.go.jp/public/201702283173074587
  • 小型プラズマ溶射装置の開発と機能性酸化被膜の形成, 松本侑也, 坂口勇哉, 村野正典, 松谷貴臣, 電気関係学会関西連合大会講演論文集(CD-ROM), 2017, ROMBUNNO.G6‐16,   2017 11 06 , http://jglobal.jst.go.jp/public/201702283987413492
  • 磁場‐パルスプラズマ援用化学気相成長法を用いたa‐SiCN隔膜に対するパルスパラメータ変化が及ぼす影響, 村野正典, 松谷貴臣, 川崎忠寛, 電気学会基礎・材料・共通部門大会講演論文集(CD-ROM), 2017, ROMBUNNO.19‐P‐19,   2017 09 19 , http://jglobal.jst.go.jp/public/201702226686724180
  • レーザーピーニングにおける金属表面の硬度分布, 藤田雅之, 藤田雅之, 伊藤拓也, 松谷貴臣, 染川智弘, 宮永憲明, 大阪大学レーザーエネルギー学研究センター共同利用・共同研究成果報告書, 2016, 153‐154,   2017 03 , http://jglobal.jst.go.jp/public/201702219798451084
  • 磁場‐パルスプラズマ援用化学気相成長法における環境セル用a‐SiCN隔膜のパルスパラメータ依存性, 村野正典, 松谷貴臣, 川崎忠寛, 電気関係学会関西連合大会講演論文集(CD-ROM), 2016, ROMBUNNO.G6‐8,   2016 11 07 , http://jglobal.jst.go.jp/public/201602212629649297
  • 環境セル型透過電子顕微鏡a‐SiCN隔膜への窒素プラズマ照射による効果, 村野正典, 松谷貴臣, 川崎忠寛, 電気学会基礎・材料・共通部門大会講演論文集(CD-ROM), 2016, ROMBUNNO.5‐P‐9,   2016 09 05 , http://jglobal.jst.go.jp/public/201602243680824280
  • Quasi‐Besselビームと環状ピクセルディテクタを用いたSTEM位相再生法の開発, 川崎忠寛, 川崎忠寛, 川崎忠寛, 石田高史, 石田高史, 児玉哲司, 松谷貴臣, 丹司敬義, 丹司敬義, 生田孝, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 77th, ROMBUNNO.15p‐B5‐7,   2016 09 01 , http://jglobal.jst.go.jp/public/201602282842352306
  • 磁場‐パルスプラズマ援用化学気相成長法により作製した環境セル型透過電子顕微鏡用a‐SiCN隔膜への窒素プラズマ照射効果, 松谷貴臣, 村野正典, 山崎佳代, 川崎忠寛, 電気学会全国大会講演論文集(CD-ROM), 2016, ROMBUNNO.1‐176,   2016 03 05 , http://jglobal.jst.go.jp/public/201602214075984372
  • 炭素繊維強化プラスチックのパルスレーザー加工における波長・パルス幅依存性, 大河弘志, 染川智弘, 藤田雅之, 藤田雅之, 松谷貴臣, 前田佳伸, 宮永憲明, 応用物理学会春季学術講演会講演予稿集(CD-ROM), 63rd, ROMBUNNO.19P-W321-5,   2016 03 03 , http://jglobal.jst.go.jp/public/201602219581600401
  • 円環・円孔電極を用いた電界型Csコレクタの開発(3), 川崎忠寛, 川崎忠寛, 高井康行, 小川雄紀, 石田高史, 児玉哲司, 富田正弘, 松谷貴臣, 生田孝, 応用物理学会春季学術講演会講演予稿集(CD-ROM), 63rd, ROMBUNNO.21P-H137-9,   2016 03 03 , http://jglobal.jst.go.jp/public/201602220917190477
  • CBRNE災害現場の有害物質検知に向けたダブルパルスLIBS法の研究, 前田佳伸, 大塚昌孝, 染川智弘, 松谷貴臣, 藤田雅之, 藤田雅之, 宮永憲明, 大阪大学レーザーエネルギー学研究センター共同利用・共同研究成果報告書, 2015, 219, 220,   2016 03 , http://jglobal.jst.go.jp/public/201602236142637251
  • 炭素繊維強化プラスチックのパルスレーザー加工に関する研究, 藤田雅之, 藤田雅之, 大河弘志, 前田佳伸, 松谷貴臣, 染川智弘, 宮永憲明, 大阪大学レーザーエネルギー学研究センター共同利用・共同研究成果報告書, 2015, 145, 146,   2016 03 , http://jglobal.jst.go.jp/public/201602242187322901
  • フェムト秒レーザーを用いたダブルパルスLIBS法の信号増強効果, OTSUKA MASATAKA, SOMEKAWA TOSHIHIRO, MATSUTANI TAKAOMI, MAEDA YOSHINOBU, FUJITA MASAYUKI, FUJITA MASAYUKI, MIYANAGA NORIAKI, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 76th, ROMBUNNO.16P-1E-12,   2015 08 31 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201502207507714319
  • CFRPのUVナノ秒レーザー加工における熱影響層評価, OKAWA HIROSHI, SOMEKAWA TOSHIHIRO, FUJITA MASAYUKI, FUJITA MASAYUKI, MATSUTANI TAKAOMI, MAEDA YOSHINOBU, MIYANAGA NORIAKI, BOVATSEK J, PATEL R, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 76th, ROMBUNNO.14A-2F-3,   2015 08 31 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201502221259799453
  • 環境電子顕微鏡による金ナノ触媒のプロピレン選択酸化反応その場観察, KAWASAKI TADAHIRO, MURASE HIROKI, IMAEDA NORIHIRO, MATSUTANI TAKAOMI, TANJI TAKAYOSHI, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 75th, ROMBUNNO.19A-A14-10,   2014 09 01 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201402203715369249
  • フェムト秒レーザーによる微細周期構造のナノインプリント法への応用, OTSUKA MASATAKA, SOMEKAWA TOSHIHIRO, KAWAKAMI JIRO, NISHIYABU KAZUAKI, MAEDA YOSHINOBU, MATSUTANI TAKAOMI, FUJITA MASAYUKI, MIYANAGA NORIAKI, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 75th, ROMBUNNO.17A-S9-5,   2014 09 01 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201402211151647335
  • 円環状絞りによるSTEM焦点深度拡大の検証実験, KAWASAKI TADAHIRO, ISHIDA TAKAFUMI, MATSUTANI TAKAOMI, KODAMA TETSUJI, IKUTA TAKASHI, TANJI TAKAYOSHI, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 75th, ROMBUNNO.19A-A14-2,   2014 09 01 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201402213144988618
  • CFRPのUVピコ秒レーザー加工における熱影響層評価, OKAWA HIROSHI, SOMEKAWA TOSHIHIRO, FUJITA MASAYUKI, MAEDA YOSHINOBU, MATSUTANI TAKAOMI, MIYANAGA NORIAKI, ORII YOSUKE, INABA KOJI, OKADA JOJI, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), 75th, ROMBUNNO.17A-S9-7,   2014 09 01 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201402240524162728
  • 環境電子顕微鏡用の液体セルの開発, IMAEDA NORIHIRO, MURASE HIROKI, KAWASAKI TADAHIRO, YAMASAKI KAYO, MATSUTANI TAKAOMI, TANJI TAKAYOSHI, 応用物理学会春季学術講演会講演予稿集(CD-ROM), 61st, ROMBUNNO.18A-F5-4,   2014 03 03 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201402227692978222
  • Micromachining of CFRP with short pulse lasers, M. Fujita, M. Fujita, H. Ohkawa, M. Otsuka, T. Somekawa, Y. Maeda, T. Matsutani, N. Miyanaga, Y. Orii, K. Inaba, G. Okada, JSAP-OSA Joint Symposia, JSAP 2014,   2014 01 01 , https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84928911403&origin=inward
  • 低エネルギイオンビームを用いた表面処理, MATSUTANI TAKAOMI, KAWASAKI TADAHIRO, KODAMA TETSUJI, TAKAI YOSHIZO, IKUTA TAKASHI, 電気関係学会関西連合大会講演論文集(CD-ROM), 2013, ROMBUNNO.G6-9,   2013 11 05 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201302229245481170
  • 電界放出型電子源用金属酸化物ウィスカ作製におけるAl(OH)3混合比依存性, UENO HITONARI, MATSUTANI TAKAOMI, NAKANO HITOSHI, KAWASAKI TADAHIRO, 電気関係学会関西連合大会講演論文集(CD-ROM), 2013, ROMBUNNO.P-23,   2013 11 05 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201302233833948520
  • 金属酸化物を用いた電界放出型電子源用ウィスカの開発, UENO JUN'YA, MATSUTANI TAKAOMI, NAKANO HITOSHI, KAWASAKI TADAHIRO, 電気関係学会関西連合大会講演論文集(CD-ROM), 2012, ROMBUNNO.8AMD-3,   2012 11 26 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201302257342184842
  • HMDSNを用いた環境セル型透過電子顕微鏡用窒化膜の開発, YAMAZAKI KAYO, NAKANO HITOSHI, MATSUTANI TAKAOMI, SAI SHIHO, KAWASAKI TADAHIRO, 電気関係学会関西連合大会講演論文集(CD-ROM), 2012, ROMBUNNO.P-22,   2012 11 26 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201302290582827101
  • 環境セル電子顕微鏡におけるSiN/C隔膜の開発, CUI ZIPENG, IMAEDA NORIHIRO, KAWASAKI TADAHIRO, TANJI TAKAYOSHI, YAMAZAKI KAYO, MATSUTANI TAKAOMI, 応用物理学会学術講演会講演予稿集(CD-ROM), 73rd, ROMBUNNO.14A-C3-2,   2012 08 27 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201202250687912059
  • 環境セル電子顕微鏡における隔膜の膜厚最適化, CUI ZIPENG, MIURA TAKUYA, KAWASAKI TADAHIRO, TANJI TAKAYOSHI, MATSUTANI TAKAOMI, 応用物理学関係連合講演会講演予稿集(CD-ROM), 59th, ROMBUNNO.16P-B5-3,   2012 02 29 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201202222002818345
  • 光源励起用金属酸化物電界放射型エミッタの開発, NURURU HANA, UENO HITOYA, MATSUTANI TAKAOMI, 電気関係学会関西連合大会講演論文集(CD-ROM), 2011, ROMBUNNO.30A3-20,   2011 10 17 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201102215859824605
  • 磁場援用パルスプラズマ化学気相成長法による環境セル型透過電子顕微鏡用隔膜の開発, YAMAZAKI KAYO, MATSUTANI TAKAOMI, KAWASAKI TADAHIRO, 電気関係学会関西連合大会講演論文集(CD-ROM), 2011, ROMBUNNO.30A3-21,   2011 10 17 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201102269220300624
  • 長寿命酸化物電界放射型電子源の開発, ZOLCAPLI NURUL, HANA BINTI, MATSUTANI TAKAOMI, 電気学会電子・情報・システム部門大会講演論文集(CD-ROM), 2011, ROMBUNNO.PS1-8,   2011 09 07 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201102201069596083
  • プラズマ援用化学気相成長法による環境セル型隔膜の開発, YAMASAKI KAYO, MATSUTANI TAKAOMI, KAWASAKI TADAHIRO, 電気学会電子・情報・システム部門大会講演論文集(CD-ROM), 2011, ROMBUNNO.PS1-7,   2011 09 07 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201102277515032519
  • 生体埋込金属材料のDLCコーティングによる高機能化, KUNO SHUGO, MATSUTANI TAKAOMI, NAKANO HITOSHI, TSUKAMOTO MASAHIRO, NAKAYAMA TAKEYOSHI, 日本レーザー医学会誌, 31, 4, 467,   2011 01 31 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201102279750222247
  • 生体埋込金属材料のDLCコーティングによる高機能化, 久野 秀剛, 松谷 貴臣, 中野 人志, 塚本 雅裕, 中山 斌義, 日本レーザー医学会誌, 31, 4, 467, 467,   2011 01
  • 生体埋込金属材料へのDLCコーティング, KUNO HIDETAKE, MATSUTANI TAKAOMI, NAKANO HITOSHI, TSUKAMOTO MASAHIRO, NAKAYAMA TAKEYOSHI, 電気関係学会関西連合大会講演論文集(CD-ROM), 2010, ROMBUNNO.3A202-1,   2010 10 28 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201102254152410478
  • 軟X線励起小型大気圧イオン源の高出力化とその応用, HANA NURUL, TSUTSUI HIDENORI, MATSUTANI TAKAOMI, HOSOKAWA YOSHINORI, 電気関係学会関西連合大会講演論文集(CD-ROM), 2010, ROMBUNNO.3A203-1,   2010 10 28 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201102264905345718
  • PECVD法を用いた環境セル電子顕微鏡用ホウ素系及びケイ素系非結晶隔膜の開発, TSUTSUI HIDENORI, MATSUTANI TAKAOMI, KAWASAKI TADAHIRO, 電気関係学会関西連合大会講演論文集(CD-ROM), 2010, ROMBUNNO.3A203-5,   2010 10 28 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201102279462224057
  • PECVD法による環境セル透過型電子顕微鏡用アモルファスホウ素系隔膜の開発, TSUTSUI HIDENORI, MATSUTANI TAKAOMI, KAWASAKI TADAHIRO, 電気学会基礎・材料・共通部門大会講演論文集(CD-ROM), 2010, ROMBUNNO.P-37,   2010 09 13 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201002202521706559
  • 生体埋込金属材料のDLCコーティングによる高機能化, KUNO HIDETAKA, MATSUTANI TAKAOMI, NAKANO HITOSHI, TSUKAMOTO MASAHIRO, NAKAYAMA TAKEYOSHI, 電気学会基礎・材料・共通部門大会講演論文集(CD-ROM), 2010, ROMBUNNO.P-22,   2010 09 13 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201002215225195047
  • 走査型透過電子顕微鏡への輪帯瞳を用いた電子光学システムの開発, MATSUTANI TAKAOMI, TANAKA TAKEO, KAWASAKI TADAHIRO, TAYA MASAKI, IKUTA TAKASHI, 電気学会基礎・材料・共通部門大会講演論文集(CD-ROM), 2010, ROMBUNNO.XXV-5,   2010 09 13 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201002222405589651
  • 軟X線励起小型大気圧イオン源の開発, HANA NURUL, TSUTSUI HIDENORI, MATSUTANI TAKAOMI, HOSOKAWA YOSHINORI, 電気学会基礎・材料・共通部門大会講演論文集(CD-ROM), 2010, ROMBUNNO.P-31,   2010 09 13 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201002257570517485
  • Functionality enhancement of implant material by DLC coating, KUNO H, MATSUTANI T, NAKANO H, TSUKAMOTO M, NAKAYAMA T, レーザー学会研究会報告 = Reports on the Topical meeting of the Laser Society of Japan, 402, 1, 6,   2010 09 03 , http://ci.nii.ac.jp/naid/10026690955
  • 環境セル電子顕微鏡のための窒化シリコン/カーボン隔膜の開発, MIURA TAKUYA, KAWASAKI TADAHIRO, TSUTSUI, HIDENORI, MATSUTANI TAKAOMI, TANJI TAKAYOSHI, 応用物理学会学術講演会講演予稿集(CD-ROM), 71st, ROMBUNNO.17A-E-4,   2010 08 30 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201002294403658622
  • 文化財環境モニターのための小型臭気センサーの開発, TAKEUCHI TAKAE, KIMURA TOMOKO, TANAKA HARUNA, SUZUKI TAKAHITO, IWAGUCHI SHIN'ICHI, KANEKO SACHIYO, KIUCHI MASATO, OKUBO MAMORU, HASHIMOTO YOSHIO, HOSOKAWA YOSHINORI, MATSUTANI TAKAOMI, 日本化学会講演予稿集, 90th, 1, 140,   2010 03 12 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201002226390714158
  • 触媒反応その場観察のための環境セル電子顕微鏡システムの開発(VIII), KAWASAKI TADAHIRO, MIURA TAKUYA, TSUTSUI HIDENORI, MATSUTANI TAKAOMI, TANJI TAKAYOSHI, 応用物理学関係連合講演会講演予稿集(CD-ROM), 57th, ROMBUNNO.19A-S-3,   2010 03 03 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201002200996429514
  • 収差補正STEMにおける輪帯絞りを用いたプローブ形成―シミュレーション解析―, KAWASAKI TADAHIRO, MATSUTANI TAKAOMI, IKUTA TAKASHI, ICHIHASHI MIKIO, TANJI TAKAYOSHI, 日本物理学会講演概要集, 65, 1, 981,   2010 03 01 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201002233367885189
  • 21aHS-6 Probe formation with annular apertures in aberration-corrected STEMS : Simulation analysis, Kawasaki Tadahiro, Matsutani Takaomi, Ikuta Takashi, Ichihashi Mikio, Tanji Takayoshi, Meeting abstracts of the Physical Society of Japan, 65, 1,   2010 03 01 , http://ci.nii.ac.jp/naid/110007657439
  • 集束イオンビームによる走査型透過電子顕微鏡用輪帯アパーチャの開発, MATSUTANI TAKAOMI, TANAKA TAKEO, KIMURA YOSHIHIDE, TAKAI YOSHIZO, KAWASAKI TADAHIRO, ICHIHASHI MIKIO, IKUTA TAKASHI, 真空に関する連合講演会講演予稿集, 50th, 88,   2009 11 04 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902218607523050
  • 透過型電子顕微鏡用環境セルに用いるB‐C‐N‐O系非結晶隔膜の作製, TSUTSUI HIDENORI, MATSUTANI TAKAOMI, KAWASAKI TADAHIRO, 真空に関する連合講演会講演予稿集, 50th, 57,   2009 11 04 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902287934391291
  • 高耐圧性を有する極薄アモルファス・カーボン膜の作製, KAWASAKI TADAHIRO, TANJI TAKAYOSHI, TSUTSUI HIDENORI, MATSUTANI TAKAOMI, 応用物理学関係連合講演会講演予稿集, 56th, 2, 588,   2009 03 30 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902223650535945
  • 集束イオンビームによるテーパを有した電子光学系輪帯瞳の開発, MATSUTANI TAKAOMI, TANAKA TAKEO, KIMURA YOSHIHIDE, TAKAI YOSHIZO, KAWASAKI TADAHIRO, ICHIHASHI MIKIO, IKUTA TAKASHI, 電気学会全国大会講演論文集, 2009, 3, 26,   2009 03 17 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902209032626210
  • プラズマCVD法を用いたTEMによるin‐situ触媒反応観察のための隔膜の開発, TSUTSUI HIDENORI, MATSUTANI TAKAOMI, KAWASAKI TADAHIRO, 電気学会全国大会講演論文集, 2009, 3, 27,   2009 03 17 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902283105951225
  • Development of Diaphragm for Environmental Cell by Plasma UVD, TSUTSUI HIDENORI, MATSUTANI TAKAOMI, KAWASAKI TADAHIRO, プラズマ応用と複合機能材料, 18, 91,   2009 03 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902204235350579
  • Some Property of Microwave Plasma at Atmospheric Pressure, YAMAMOTO YUKI, MATSUTANI TAKAOMI, YUJI TOSHIFUMI, KOBAYASHI AKIRA, プラズマ応用と複合機能材料, 18, 78,   2009 03 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902228675576575
  • ガストンネル型プラズマ溶射による遷移金属ガラス被膜の特性に関する研究, MATSUTANI TAKAOMI, 大阪大学接合科学研究所共同研究報告, 2009, 165,   2009 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201102264552320210
  • 触媒反応その場観察のための環境セル電子顕微鏡システムの開発(VII), UEDA KOTA, HASEGAWA HITOSHI, KAWASAKI TADAHIRO, MATSUTANI TAKAOMI, TANJI TAKAYOSHI, 応用物理学関係連合講演会講演予稿集, 55th, 2, 708,   2008 03 27 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902241760268665
  • Formation of High-energy Electron Scattering Suppressible Annular Pupils for Electron Optics by Focused Ion Beam Technique, MATSUTANI TAKAOMI, TAYA MASAKI, IKUTA TAKASHI, FUJIMURA TETSUYA, INUI HIROHIKO, TANAKA TAKEO, SHIMIZU IPPEI, KIMURA YOSHIHIDE, TAKAI YOSHIZO, KAWASAKI TADAHIRO, ICHIHASHI MIKIO, OE TOSHIMI, プラズマ応用と複合機能材料, 17, 81, 82,   2008 03 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902239361922390
  • 輪帯瞳と並列検出器の走査型透過電子顕微鏡への応用, TAYA MASAKI, MATSUTANI TAKAOMI, IKUTA TAKASHI, SAITO HIDEKAZU, OGAI KEIKO, HARADA YOSHIHITO, TANAKA TAKEO, TAKAI YOSHIZO, 応用物理学会学術講演会講演予稿集, 68th, 2, 727,   2007 09 04 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902282720064097
  • 集束イオンビームを用いた電子光学系輪帯照明用アパーチャの開発, MATSUTANI TAKAOMI, IKUTA TAKASHI, TAYA MASAKI, TAKAI YOSHIZO, KAWASAKI TADAHIRO, ICHIHASHI MIKIO, SHIMIZU IPPEI, FUJIWARA MAKOTO, TANAKA TAKEO, 応用物理学関係連合講演会講演予稿集, 54th, 2, 768,   2007 03 27 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902227767621260
  • 並列検出器を用いたSTEM無収差位相像再構成システムの開発 II, TAYA MASAKI, MATSUTANI TAKAOMI, IKUTA TAKASHI, SAITO HIDEKAZU, OGAI KEIKO, HARADA YOSHIHITO, TANAKA TAKEO, TAKAI YOSHIZO, 応用物理学関係連合講演会講演予稿集, 54th, 2, 769,   2007 03 27 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902232037111090
  • Development of Apertures for Annular Pupil in Electron Optics by Focused Ion Beam, MATSUTANI TAKAOMI, IKUTA TAKASHI, FUJIWARA MAKOTO, TANAKA TAKEO, SHIMIZU IPPEI, TAYA MASAKI, TAKAI YOSHIZO, KAWASAKI TADAHIRO, ICHIHASHI MIKIO, プラズマ応用と複合機能材料, 16, 139, 140,   2007 03 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902291550955780
  • HAp被膜作製において基板上に生成される酸化層に対するLALA法の有効性, DODO MASAHIRO, KATAYAMA HIROTAKA, MATSUTANI TAKAOMI, HASHISHIN YUICHI, NAKAYAMA TAKEYOSHI, 電気関係学会関西支部連合大会講演論文集(CD-ROM), 2006, G1-18,   2006 11 15 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902241351262299
  • 銅基板上への窒化アルミニウム膜形成と軟X線源への応用, KIUCHI MASATO, MATSUTANI TAKAOMI, SHIROZU KIYOTAKA, YOSHIOKA AKIHIRO, TAMURA KEIJI, SHIMIZU RYUICHI, TAKAHASHI SADAYUKI, 表面技術協会講演大会講演要旨集, 111th, 318,   2005 03 07 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902266386161790
  • イオンビーム誘起CVD法による酸化スズ薄膜の作製, FUJIKAWA YUKA, KIUCHI MASAHITO, MATSUTANI TAKAOMI, TAKEUCHI TAKAE, 真空に関する連合講演会講演予稿集, 46th, 103,   2005 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902228981499835
  • 強力X線源の開発 (IV)―AlN/Cuターゲット電子線照射効果, MATSUTANI TAKAOMI, KIUCHI MASATO, SHIROZU KIYOTAKA, SHIMIZU RYUICHI, TAKAHASHI SADAYUKI, 応用物理学会学術講演会講演予稿集, 65th, 2, 603,   2004 09 01 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902225585836919
  • 強力X線源の開発 (III)―AlN/Cuターゲット, MATSUTANI TAKAOMI, KIUCHI MASATO, SHIROZU KIYOTAKA, SHIMIZU RYUICHI, 応用物理学関係連合講演会講演予稿集, 51st, 2, 749,   2004 03 28 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902212697686117
  • 強力X線源の開発 (II)―AlN/Cuターゲットの最適使用条件, SHIROZU KIYOTAKA, YOSHIOKA AKIHIRO, SHIMIZU RYUICHI, TAKAHASHI SADAYUKI, KIUCHI MASATO, MATSUTANI TAKAOMI, 応用物理学関係連合講演会講演予稿集, 51st, 2, 748,   2004 03 28 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902248363116667
  • 強力軟X線源の開発―AlN/Cuターゲット, MATSUTANI TAKAOMI, KIUCHI MASATO, SHIRAMIZU KIYOTAKA, YOSHIOKA AKIHIRO, SHIMIZU RYUICHI, TAKAHASHI SADAYUKI, 真空に関する連合講演会講演予稿集, 45th, 91,   2004 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902273508873539
  • 100%酸素プラズマによる酸化チタン薄膜の成長挙動と基板依存性, ASANUMA TATSUYA, MATSUTANI TAKAOMI, RYU SHO, MIHARA TOSHIYUKI, KINOUCHI MASATO, 真空に関する連合講演会講演予稿集, 44th, 73,   2003 11 12 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902275907200850
  • 強力X線源の開発‐AlN/Cuターゲット, SHIROZU KIYOTAKA, YOSHIOKA AKIHIRO, SHIMIZU RYUICHI, TAKAHASHI SADAYUKI, KIUCHI MASATO, MATSUTANI TAKAOMI, 応用物理学会学術講演会講演予稿集, 64th, 2, 616,   2003 08 30 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902203777942859
  • 低エネルギーイオンビーム誘起CVD法によるGe‐C薄膜の形成, MATSUTANI TAKAOMI, ASANUMA TATSUYA, KIUCHI MASATO, TAKEUCHI TAKAE, 応用物理学会学術講演会講演予稿集, 64th, 2, 575,   2003 08 30 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902235520838243
  • 100%O2プラズマ中の低エネルギースパッタ粒子により形成された酸化チタンの薄膜特性, ASANUMA TATSUYA, MATSUTANI TAKAOMI, LIU C, MIHARA TOSHIYUKI, KIUCHI MASATO, 応用物理学会学術講演会講演予稿集, 64th, 2, 667,   2003 08 30 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902292335144476
  • 電子ペーパー実現のための低エネルギーイオンビーム技術, KIUCHI MASATO, MATSUTANI TAKAOMI, ASANUMA TATSUYA, RYU SHO, TAKEUCHI TAKAE, 21世紀連合シンポジウム論文集, 1st, 249, 250,   2002 11 23 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902141586751160
  • 反応性RFスパッタリング法による結晶性酸化チタン薄膜の低温成膜とキャラクタリゼーション, NUSAAMA TATSUYA, MATSUTANI TAKAOMI, RYU SHO, MIHARA TOSHIYUKI, KIUCHI MASATO, 真空に関する連合講演会講演予稿集, 43rd, 289, 290,   2002 10 16 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902118306564440
  • イオンビーム誘起CVD法による有機ケイ素を用いたシリコン化合物薄膜の形成, MATSUTANI TAKAOMI, ASANUMA TATSUYA, LIU C, KIUCHI MASATO, 応用物理学会学術講演会講演予稿集, 63rd, 2, 545,   2002 09 24 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902102035940250
  • 液体有機金属を用いたイオンビーム誘起CVD法の開発, MATSUTANI TAKAOMI, KIUCHI MASATO, TAKEUCHI TAKAE, 表面技術協会講演大会講演要旨集, 106th, 276, 279,   2002 09 06 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902147061055668
  • 有機ケイ素を前駆体としたイオンビーム誘起CVD法の開発, MATSUTANI TAKAOMI, ASANUMA TATSUYA, LIU C, KIUCHI MASATO, 応用物理学関係連合講演会講演予稿集, 49th, 2, 617,   2002 03 27 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902122024908704
  • 有機ケイ素を用いたイオン誘起CVD法の開発, MATSUTANI TAKAOMI, ASANUMA TATSUYA, LIU C, KIUCHI MASATO, TAKEUCHI TAKAE, GOTO SEIICHI, 高温学会誌, 28, 1, N4(12),   2002 01 20 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902198477004888
  • Ion Beam Induced CVD Method with Organosilicon Precursor, MATSUTANI Takaomi, ASANUMA Tetsuya, LIU Chang, KIUCHI Masato, TAKEUCHI Takae, GOTO Seiichi, 高温学会誌, 28, 1,   2002 01 20 , http://ci.nii.ac.jp/naid/10007762962
  • ヘキサメチルジシランを用いたイオンビーム誘起CVD法, KIUCHI MASATO, MATSUTANI TAKAOMI, TAKEUCHI TAKAE, イオン注入表層処理シンポジウム予稿集, 17th, 15, 17,   2001 11 30 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902128048388149
  • 低エネルギーイオンによるFIBダメージ層の低減化, IWAMOTO KEIGO, MATSUTANI TAKAOMI, NAGATOMI TAKAHARU, KIMURA YOSHIHIDE, TAKAI YOSHIZO, 応用物理学関係連合講演会講演予稿集, 48th, 2, 769,   2001 03 28 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201202176846718921
  • 新手法によるハイドロキシアパタイトコーティングの有効性, NAKAMURA MASAHIRO, KUWATA MASAHIRO, MATSUTANI TAKAOMI, NAKAYAMA TAKEYOSHI, 日本レーザー医学会誌, 21, 4, 330,   2000 12 28 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902121618028074
  • 新手法によるハイドロキシアパタイトコーティングの有効性, 中村 昌弘, 桑田 真宏, 松谷 貴臣, 中山 斌義, 日本レーザー医学会誌, 21, 4, 330, 330,   2000 12
  • レーザーアシスト・レーザーアブレーション法によるTi表面へのハイドロキシアパタイトコーティング, NAKAYAMA TAKEYOSHI, NAKAMURA MASAHIRO, KUWATA MASAHIRO, MATSUTANI TAKAOMI, 日本レーザー医学会誌, 21, 3, 281,   2000 09 28 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902119717700731
  • 極表面分析用超低エネルギーイオン銃の開発(V)―FIB加工ダメージ層の低減化, IWAMOTO KEIGO, MATSUTANI TAKAOMI, TAKAI YOSHIZO, AIHARA RYUZO, SAKUMA YOSHIZO, 応用物理学会学術講演会講演予稿集, 61st, 2, 629,   2000 09 03 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201202100500283116
  • 極表面分析用超低エネルギーイオン銃の開発(IV), MATSUTANI TAKAOMI, IWAMOTO KEIGO, TAKAI YOSHIZO, AIHARA RYUZO, SAKUMA YOSHIZO, 応用物理学会学術講演会講演予稿集, 61st, 2, 629,   2000 09 03 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201202118154765571
  • レーザーアシスト・レーザーアブレーション法によるTi表面へのハイドロキシアパタイトコーティング, 中山 斌義, 中村 昌弘, 桑田 真宏, 松谷 貴臣, 日本レーザー医学会誌, 21, 3, 281, 281,   2000 09
  • 極表面分析用超低エネルギーイオン銃の開発(III), MATSUTANI TAKAOMI, IWAMOTO KEIGO, BEAG Y. W, TAKAI YOSHIZO, SHIMIZU RYUICHI, AIHARA RYUZO, SAKUMA YOSHIZO, 応用物理学関係連合講演会講演予稿集, 47th, 2, 727,   2000 03 28 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201202138352105766
  • Crystal Growth of SiC using Organosilicon Ion Beam, KIUCHI Masato, MATSUTANI Takaomi, TAKEUCHI Takae, MATSUMOTO Takashi, MIMOTO Kazuhiko, GOTO Seiichi, 真空, 43, 3,   2000 03 20 , http://ci.nii.ac.jp/naid/10004562101
  • レーザーアシスト・レーザーアブレーション法によるHApコーティング, KUWATA MASAHIRO, MATSUTANI TAKAOMI, NAKAYAMA TAKEYOSHI, レーザー学会学術講演会年次大会講演予稿集, 20th, 200,   2000 01 20 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902152205956073
  • レーザーアブレーション法によるp型ZnO透明電極の作製, WATANABE TETSUMI, NAKAYAMA TAKEYOSHI, MATSUTANI TAKAOMI, OKADA KAZUYUKI, レーザー学会学術講演会年次大会講演予稿集, 20th, 90,   2000 01 20 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902179372049822
  • HApコーティング材料開発方法の現状 第12回日本レーザー医学会関西地方会, KUWATA MASAHIRO, MATSUTANI TAKAOMI, NAKAYAMA TAKEYOSHI, 日本レーザー医学会誌, 20, 4, 418,   1999 12 28 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902161217828606
  • HApコーティング材料開発方法の現状, 桑田 真宏, 松谷 貴臣, 中山 斌義, 日本レーザー医学会誌, 20, 4, 418, 418,   1999 12
  • Surface modification of biomaterial by laser irradiation method, Kenji Kumazaki, Masahiro Kuwata, Takaomi Matsutani, Takeyoshi Nakayama, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 4, 1301, 1302,   1999 12 01 , 10.1109/CLEOPR.1999.814785, http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0033331728&origin=inward
    Summary:A simple method using a discharge-pumped KrF excimer laser is presented for the formation of HAp layer on Al2O3. A bio-compatibility of the sample formed by this method is confirmed with simulated body fluid (SBF) containing an apatite-wollastonite glass (A-W glass) and a growing mechanism of the HAp layer is discussed.
  • 有機ケイ素イオンビームを用いたSiCの高速制膜, KIUCHI MASATO, MATSUTANI TAKAOMI, TAKEUCHI TAKAE, MATSUMOTO TAKASHI, MIMOTO KAZUHIKO, GOTO SEIICHI, イオン注入表層処理シンポジウム予稿集, 15th, 71, 72,   1999 11 19 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902135449734194
  • Hydroxyapatite coating methods for ceramics by using laser light, KUWATA Masahiro, MATSUTANI Takaomi, NAKAYAMA Takeyoshi, レーザー学会研究会報告 = Reports on the Topical meeting of the Laser Society of Japan, 268, 7, 12,   1999 11 12 , http://ci.nii.ac.jp/naid/10005726999
  • 有機ケイ素イオンビームを用いたSiCの結晶成長, KIUCHI MASATO, MATSUTANI TAKAOMI, TAKEUCHI TAKAE, MATSUMOTO TAKASHI, MIMOTO KAZUHIKO, GOTO SEIICHI, 真空に関する連合講演会講演予稿集, 40th, 304, 305,   1999 11 10 , http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=200902196003590058
  • Mass production technology of SiC thin film formation using organic silicon ion., 木内正人, 松谷貴臣, 竹内孝江, 松本貴士, 美本和彦, 後藤誠一, 表面技術協会講演大会講演要旨集, 100th, 172,   1999 09 17 , http://jglobal.jst.go.jp/public/200902104983267744
  • ECRプラズマを用いたSiC/Si薄膜の作製, 松谷貴臣, 木内正人, 松本貴士, 美本和彦, 後藤誠一, 応用物理学会学術講演会講演予稿集, 60th, 2, 510,   1999 09 01 , http://jglobal.jst.go.jp/public/200902113088333692
  • イオンビーム援用蒸着法による金薄膜の作製と評価, 村井健介, 松谷貴臣, 木内正人, 黒川裕之, 中山たけ義, 古市考次, 瀧川靖雄, 応用物理学会学術講演会講演予稿集, 60th, 2, 496,   1999 09 01 , http://jglobal.jst.go.jp/public/200902134342234958
  • ハイドロキシアパタイトコーティング方法の現状, 桑田 真宏, 松谷 貴臣, 中山 斌義, 日本レーザー医学会誌, 20, 3, 315, 315,   1999 09
  • KrFエキシマレーザー照射による医用インプラント材料の開発, 桑田 真宏, 熊崎 建二, 松谷 貴臣, 中山 斌義, 日本レーザー医学会誌, 19, 4, 261, 261,   1998 12
  • Development of Biocompatible Implant Material by Excimer Laser Irradiation Method., 松谷貴臣, 熊崎建二, 中山斌義, 電気学会光・量子デバイス研究会資料, OQD-98, 45-48.50, 13, 17,   1998 10 05 , http://jglobal.jst.go.jp/public/200902170471144562
  • Development of Biocompatible Implant Material by Excimer Laser Irradiation Method, MATSUTANI Takaomi, KUMAZAKI Kenji, NAKAYAMA Takeyoshi, 電気学会研究会資料. OQD, 光・量子デバイス研究会, 1998, 45, 13, 17,   1998 10 05 , http://ci.nii.ac.jp/naid/10024737253
  • Growing mechanism of apatite in the simulated body environment of HAp/Al2O3 biomaterial formed by the laser irradiation method., 桑田真宏, 熊崎建二, 中山斌義, 松谷貴臣, 近畿大学理工学部研究報告, 34, 59, 63,   1998 09 , http://jglobal.jst.go.jp/public/200902107973421698
  • Characteristic of visible light emitting Al2O3 thin films prepared by laser ablation method., 石垣壮洋, 松谷貴臣, 松栄宏明, 中山斌義, 近畿大学理工学部研究報告, 34, 53, 57,   1998 09 , http://jglobal.jst.go.jp/public/200902122119239818
  • A method of HAp-Al2O3 composite material formation for bio-implantation., 桑田真宏, 熊崎建二, 松谷貴臣, 中山斌義, 応用物理学会学術講演会講演予稿集, 59th, 3, 986,   1998 09 , http://jglobal.jst.go.jp/public/200902133480617217
  • Characteristic of visible light emitting Al_2O_3 thin films prepared by laser ablation method, Ishigaki Akihiro, Matsutani Takaomi, Matsue Hiroaki, Nakayama Takeyoshi, Journal of the Faculty of Science and Technology, Kinki University, 34, 53, 57,   1998 09 , http://ci.nii.ac.jp/naid/110000173933
  • Growing mechanism of apatite in the simulated body environment of HAp/Al_2O_3 biomaterial formed by the laser irradiation method, Kuwata Masahiro, Kumazaki Kenji, Matsutani Takaomi, Nakayama Takeyoshi, Journal of the Faculty of Science and Technology, Kinki University, 34, 59, 63,   1998 09 , http://ci.nii.ac.jp/naid/110000173934
  • レーザー光を用いた生体硬組織複合材料の開発, 松谷 貴臣, 熊崎 建二, 中山 斌義, 日本レーザー医学会大会論文集, 18回, 283, 286,   1998 04
    Summary:KrFエキシマレーザーを用いて作製したHAp/Al2O3複合材料の生体親和性の有無について,SBFを用いたin vitro試験を行った.骨の代わりに用いたA-W glassと作製した試料を0.15mmのスペーサーを介して密接させ,血漿中のイオン濃度に対し2倍のSBF中に2週間浸漬させた.未照射部のAl2O3上には変化が生じなかったのに対し,レーザー照射によってAl2O3上に形成したHAp層表面には,繊維状の物質が新たに形成されていた.その物質を評価した結果,結晶構造及びCa/P比共に,骨に類似したアパタイトが再形成されていることが判った.以上から,レーザー照射によって作製したHAp/Al2O3複合材料の生体親和性向上が認められた
  • Formation of antireflection film for TiN transparent conductor by laser ablation., 松谷貴臣, 松栄宏明, 中山斌義, 久保宇市, レーザー学会学術講演会年次大会講演予稿集, 18th, 155,   1998 01 , http://jglobal.jst.go.jp/public/200902181564665726
  • Formation of antireflection film for TiN transparent conductor by laser ablation, MATSUTANI Takaomi, MATSUE Hiroaki, NAKAYAMA Takeyoshi, KUBO Uichi, レーザー学会学術講演会年次大会講演予稿集 = Annual meeting, of the Laser Society of Japan digest of technical papers, 18,   1998 01 01 , http://ci.nii.ac.jp/naid/10002882909
  • Formation of TiN and TiO2 thin film by laser ablation method., 松谷貴臣, 松栄宏明, 中山斌義, 久保宇市, 電気関係学会関西支部連合大会講演論文集, 1997, G212,   1997 10 , http://jglobal.jst.go.jp/public/200902126551934476
  • Development of organism hard tissue functional material and its biocompatibility evaluation., 熊崎建二, 松谷貴臣, 中山斌義, 久保宇市, 電気関係学会関西支部連合大会講演論文集, 1997, G213,   1997 10 , http://jglobal.jst.go.jp/public/200902132741973591
  • Development of complex bio-compatible material HAp/Al2O3 with laser., 松谷貴臣, 熊崎建二, 中山斌義, 久保宇市, 応用物理学会学術講演会講演予稿集, 58th, 3, 1051,   1997 10 , http://jglobal.jst.go.jp/public/200902136591690265
  • Formation of Ti-N films by PLD method using Ti or TiN target., 松谷貴臣, 松栄宏明, 中山斌義, 久保宇市, 応用物理学関係連合講演会講演予稿集, 44th, 3, 954,   1997 03 , http://jglobal.jst.go.jp/public/200902178771752077
  • Formation of Al2O3 Films with Visible Light Emission by Laser Ablation Method., 松栄宏明, 松谷貴臣, 中山斌義, 久保宇市, レーザー学会学術講演会年次大会講演予稿集, 17th, 169,   1997 01 , http://jglobal.jst.go.jp/public/200902182333697427
  • TiN films for transparent electrode formed by PLD., 松谷貴臣, 松栄宏明, 中山斌義, 久保宇市, レーザー学会学術講演会年次大会講演予稿集, 17th, 182,   1997 01 , http://jglobal.jst.go.jp/public/200902183958997158
  • Formation of Al_2O_3 Films with Visible Light Emission by Laser Ablation Method, MATSUE Hiroaki, MATSUTANI Takaomi, NAKAYAMA Takeyoshi, KUBO Uichi, レーザー学会学術講演会年次大会講演予稿集 = Annual meeting, of the Laser Society of Japan digest of technical papers, 17,   1997 01 01 , http://ci.nii.ac.jp/naid/10002882217
  • TiN films for transparent electrode formed by PLD, MATSUTANI Takaomi, MATSUE Hiroaki, NAKAYAMA Takeyoshi, KUBO Uichi, レーザー学会学術講演会年次大会講演予稿集 = Annual meeting, of the Laser Society of Japan digest of technical papers, 17,   1997 01 01 , http://ci.nii.ac.jp/naid/10002882242
  • Preparation of TiN thin film on SiO2 substrate by pulsed laser., 松栄宏明, 松谷貴臣, 中山斌義, 久保宇市, 電気関係学会関西支部連合大会講演論文集, 1996, G227,   1996 11 , http://jglobal.jst.go.jp/public/200902186506754850
  • Ti-N film for transparent conductor prepared by PLD method., 松谷貴臣, 熊崎建二, 中山たけ義, 久保宇市, 応用物理学会学術講演会講演予稿集, 57th, 3, 879,   1996 09 , http://jglobal.jst.go.jp/public/200902106659785794
  • Development of bio-functional material by laser irradiation., 熊崎建二, 松谷貴臣, 中山斌義, 久保宇市, 近畿大学理工学部研究報告, 32, 55, 59,   1996 09 , http://jglobal.jst.go.jp/public/200902166172372411
  • Development of bio-functional material by laser irradiation, Kumazaki Kenji, Matsutani Takaomi, Nakayama Takeyoshi, Journal of the Faculty of Science and Technology, Kinki University, 32, 55, 59,   1996 09 , http://ci.nii.ac.jp/naid/110000173855
  • Formation of apatite layer on alumina substrate with KrF excimer laser., 熊崎建二, 松谷貴臣, 中山斌義, 久保宇市, 電気学会全国大会講演論文集, 1996, 2, 2.240,   1996 03 , http://jglobal.jst.go.jp/public/200902121672548440
  • Formation of Titanium Nitride Film by Pulsed Laser Deposition Method., 松谷貴臣, 熊崎建二, 中山斌義, 久保宇市, 電気学会全国大会講演論文集, 1996, 2, 2.54,   1996 03 , http://jglobal.jst.go.jp/public/200902143589900062
  • Hydroxyapatite formation and crystallinity on alumina substrate., 熊崎建二, 松谷貴臣, 中山斌義, 久保宇市, レーザー学会学術講演会年次大会講演予稿集, 16th, 322,   1996 01 , http://jglobal.jst.go.jp/public/200902113860117500
  • Formation of TiN thin film by excimer laser., 松谷貴臣, 熊崎建二, 中山斌義, 久保宇市, レーザー学会学術講演会年次大会講演予稿集, 16th, 153,   1996 01 , http://jglobal.jst.go.jp/public/200902168057511427
  • Formation of a transparent TiN thin film by laser beams., 松谷貴臣, 熊崎建二, 中山斌義, 久保宇市, 電気関係学会関西支部連合大会講演論文集, 1995, G225,   1995 11 , http://jglobal.jst.go.jp/public/200902178450052480
  • Development of an organism hard tissue functional material., 熊崎建二, 松谷貴臣, 中山斌義, 久保宇市, 電気関係学会関西支部連合大会講演論文集, 1995, G231,   1995 11 , http://jglobal.jst.go.jp/public/200902187239338083
  • Development of bio-materials substitution of hard tissues by laser light., 松谷貴臣, 熊崎建二, 中山斌義, 久保宇市, 応用物理学会学術講演会講演予稿集, 56th, 1, 74,   1995 08 , http://jglobal.jst.go.jp/public/200902161462401456
  • Formation of Titanium Nitride Film by Laser Ablation Method., 松谷貴臣, 島田智史, 久保宇市, 中山たけ義, 電気学会全国大会講演論文集, 1995, 2, 2.242,   1995 03 , http://jglobal.jst.go.jp/public/200902155371500362
  • Improvement of bio-compatibility of alumina by KrF laser irradiation., 熊崎建二, 松谷貴臣, 島田智史, 久保宇市, 中山たけ義, 電気学会全国大会講演論文集, 1995, 2, 2.243,   1995 03 , http://jglobal.jst.go.jp/public/200902199918298145
  • レーザーによる原子注入の一考察, 島田智史, 松谷貴臣, 中山たけ義, 久保宇市, レーザー学会学術講演会年次大会講演予稿集, 15th, 176,   1995 01 , http://jglobal.jst.go.jp/public/200902109777702762
  • レーザー照射によるアルミナセラミックス表面へのCa,P層の形成, 松谷貴臣, 島田智史, 中山斌義, 久保宇市, レーザー学会学術講演会年次大会講演予稿集, 15th, 324,   1995 01 , http://jglobal.jst.go.jp/public/200902121903015202
  • レーザ照射による原子注入法の検討, 島田智史, 松谷貴臣, 中山たけ義, 久保宇市, 電気関係学会関西支部連合大会講演論文集, 1994, G237,   1994 10 , http://jglobal.jst.go.jp/public/200902100736141538
  • レーザ照射によるAl2O3表面へのCa層の形成, 松谷貴臣, 島田智史, 中山たけ義, 久保宇市, 電気関係学会関西支部連合大会講演論文集, 1994, G236,   1994 10 , http://jglobal.jst.go.jp/public/200902141133516284
  • 炭酸ガスレーザー照射によるアルミナセラミックスの生体親和性向上, 松谷貴臣, 島田智史, 村上幸毅, 中山斌義, 久保宇市, 森田健治, レーザー学会学術講演会年次大会講演予稿集, 14th, 284,   1994 01 , http://jglobal.jst.go.jp/public/200902195786085672

Awards & Honors

  •   2015 09 , Institute of Applied Plasma Science, Paper Award

Research Grants & Projects

  • Ministry of Education, Culture, Sports, Science and Technology, Grants-in-Aid for Scientific Research(基盤研究(C)), Development of Diaphragm for Environmental Cell Transmission Electron Microscope by Pulse Plasma Enhanced Chemical Vapor Deposition, Recently, it was reported that gold particles of less than 10 nm in diameter exhibit unique catalytic properties. Transmission electron microscopy (TEM) is useful for analyzing structures at the atomic level, but as specimens are conventionally placed under a strong vacuum, it is difficult to examine directly the relationship between the observed structures and catalytic behavior, which requires instead observation of the catalyst under reaction gas conditions.The environmental-cell (E-cell) TEM system includes a specimen holder with a small chamber to isolate the vacuum around the TEM from the reaction gas atmosphere around the specimen by means of a diaphragm. The present study turns attention to the use of amorphous boron nitride and silicon nitride films in the diaphragm of the E-cell TEM. The films were prepared using pulse plasma enhanced chemical vapor deposition. The films which were high hardness, amorphous and transparent at 200 kV electron were successfully developed.